CA895251A - Method of making a single crystal semiconductor - Google Patents

Method of making a single crystal semiconductor

Info

Publication number
CA895251A
CA895251A CA895251A CA895251DA CA895251A CA 895251 A CA895251 A CA 895251A CA 895251 A CA895251 A CA 895251A CA 895251D A CA895251D A CA 895251DA CA 895251 A CA895251 A CA 895251A
Authority
CA
Canada
Prior art keywords
making
single crystal
crystal semiconductor
semiconductor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA895251A
Inventor
Kaneko Kunio
Watanabe Naozo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Publication date
Application granted granted Critical
Publication of CA895251A publication Critical patent/CA895251A/en
Expired legal-status Critical Current

Links

CA895251A Method of making a single crystal semiconductor Expired CA895251A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA895251T

Publications (1)

Publication Number Publication Date
CA895251A true CA895251A (en) 1972-03-14

Family

ID=36401243

Family Applications (1)

Application Number Title Priority Date Filing Date
CA895251A Expired CA895251A (en) Method of making a single crystal semiconductor

Country Status (1)

Country Link
CA (1) CA895251A (en)

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