DE69209564T2 - Verfahren und Vorrichtung zur Flüssigphasenepitaxie - Google Patents

Verfahren und Vorrichtung zur Flüssigphasenepitaxie

Info

Publication number
DE69209564T2
DE69209564T2 DE69209564T DE69209564T DE69209564T2 DE 69209564 T2 DE69209564 T2 DE 69209564T2 DE 69209564 T DE69209564 T DE 69209564T DE 69209564 T DE69209564 T DE 69209564T DE 69209564 T2 DE69209564 T2 DE 69209564T2
Authority
DE
Germany
Prior art keywords
liquid phase
phase epitaxy
epitaxy
liquid
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209564T
Other languages
English (en)
Other versions
DE69209564D1 (de
Inventor
Masato Yamada
Takao Takenaka
Masahisa Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69209564D1 publication Critical patent/DE69209564D1/de
Application granted granted Critical
Publication of DE69209564T2 publication Critical patent/DE69209564T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69209564T 1991-06-14 1992-06-11 Verfahren und Vorrichtung zur Flüssigphasenepitaxie Expired - Fee Related DE69209564T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3170501A JPH04367587A (ja) 1991-06-14 1991-06-14 液相成長方法及び装置

Publications (2)

Publication Number Publication Date
DE69209564D1 DE69209564D1 (de) 1996-05-09
DE69209564T2 true DE69209564T2 (de) 1996-09-19

Family

ID=15906133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209564T Expired - Fee Related DE69209564T2 (de) 1991-06-14 1992-06-11 Verfahren und Vorrichtung zur Flüssigphasenepitaxie

Country Status (4)

Country Link
US (1) US5366552A (de)
EP (1) EP0518332B1 (de)
JP (1) JPH04367587A (de)
DE (1) DE69209564T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017009110B3 (de) 2017-09-29 2018-10-04 3-5 Power Electronics GmbH Flüssigphasenepitaxievorrichtung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885268B2 (ja) * 1994-08-30 1999-04-19 信越半導体株式会社 液相成長方法及び装置
JP4030125B2 (ja) * 2003-03-17 2008-01-09 財団法人大阪産業振興機構 Ｉｉｉ族元素窒化物単結晶の製造方法およびそれに用いる装置
RU2638575C1 (ru) * 2016-11-08 2017-12-14 Общество с ограниченной ответственностью "МеГа Эпитех" Способ получения полупроводниковых структур методом жидкофазной эпитаксии с высокой однородностью по толщине эпитаксиальных слоев
DE102017003638B3 (de) 2017-04-13 2018-03-08 3-5 Power Electronics GmbH Flüssigphasenepitaxievorrichtung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648653A (en) * 1970-06-01 1972-03-14 Bell Telephone Labor Inc Liquid phase crystal growth apparatus
US3933539A (en) * 1973-12-26 1976-01-20 Texas Instruments Incorporated Solution growth system for the preparation of semiconductor materials
JPS50110570A (de) * 1974-02-07 1975-08-30
JPS5329064A (en) * 1976-08-30 1978-03-17 Mitsubishi Electric Corp Color picture tube
JPS5659696A (en) * 1979-10-23 1981-05-23 Sanyo Electric Co Ltd Liquid phase epitaxial growing apparatus
JPS56109894A (en) * 1980-02-04 1981-08-31 Toshiba Corp Liquid phase growing apparatus
JPS5785222A (en) * 1980-11-17 1982-05-27 Toshiba Corp Semiconductor manufacturing device
JPS59116190A (ja) * 1982-12-21 1984-07-04 Sanyo Electric Co Ltd 液相エピタキシヤル成長装置
JPS63144189A (ja) * 1986-12-04 1988-06-16 Fujitsu Ltd 液相エピタキシヤル成長装置
JPS6442390A (en) * 1987-08-05 1989-02-14 Hitachi Cable Process and apparatus for carrying out liquid phase epitaxial growth
JPH01257187A (ja) * 1988-04-06 1989-10-13 Mitsubishi Electric Corp 液相エピタキシヤル成長装置
JPH02130839A (ja) * 1988-11-10 1990-05-18 Fujitsu Ltd 液相エピタキシャル成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017009110B3 (de) 2017-09-29 2018-10-04 3-5 Power Electronics GmbH Flüssigphasenepitaxievorrichtung

Also Published As

Publication number Publication date
EP0518332A1 (de) 1992-12-16
EP0518332B1 (de) 1996-04-03
JPH04367587A (ja) 1992-12-18
DE69209564D1 (de) 1996-05-09
US5366552A (en) 1994-11-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee