DE2217573C3 - Verfahren zum Aufbringen einer festhaftenden Metallschicht auf einem oxidischen Substrat für Dünnfilmschaltungen - Google Patents
Verfahren zum Aufbringen einer festhaftenden Metallschicht auf einem oxidischen Substrat für DünnfilmschaltungenInfo
- Publication number
- DE2217573C3 DE2217573C3 DE2217573A DE2217573A DE2217573C3 DE 2217573 C3 DE2217573 C3 DE 2217573C3 DE 2217573 A DE2217573 A DE 2217573A DE 2217573 A DE2217573 A DE 2217573A DE 2217573 C3 DE2217573 C3 DE 2217573C3
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- thin
- film circuits
- substrates
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 16
- 239000010409 thin film Substances 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 title claims description 5
- 239000002184 metal Substances 0.000 title claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000002318 adhesion promoter Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 125000002091 cationic group Chemical group 0.000 claims 1
- 238000009499 grossing Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000009864 tensile test Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13466571A | 1971-04-16 | 1971-04-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2217573A1 DE2217573A1 (de) | 1972-11-02 |
| DE2217573B2 DE2217573B2 (de) | 1974-02-14 |
| DE2217573C3 true DE2217573C3 (de) | 1978-03-09 |
Family
ID=22464389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2217573A Expired DE2217573C3 (de) | 1971-04-16 | 1972-04-12 | Verfahren zum Aufbringen einer festhaftenden Metallschicht auf einem oxidischen Substrat für Dünnfilmschaltungen |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3791861A (en:Method) |
| JP (1) | JPS5143570B1 (en:Method) |
| BE (1) | BE782119A (en:Method) |
| CA (1) | CA929280A (en:Method) |
| CH (1) | CH584960A5 (en:Method) |
| DE (1) | DE2217573C3 (en:Method) |
| FR (1) | FR2133777B1 (en:Method) |
| GB (1) | GB1389326A (en:Method) |
| IT (1) | IT954427B (en:Method) |
| NL (1) | NL7205052A (en:Method) |
| SE (1) | SE378972B (en:Method) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2727364A1 (de) * | 1977-06-16 | 1979-01-04 | Siemens Ag | Verfahren zur herstellung von keramiksubstraten |
| US5011568A (en) * | 1990-06-11 | 1991-04-30 | Iowa State University Research Foundation, Inc. | Use of sol-gel derived tantalum oxide as a protective coating for etching silicon |
| US5425909A (en) * | 1992-07-20 | 1995-06-20 | Industrial Technology Research Institute | Heat treatment for particle reinforced alumina ceramic composite |
| US5856235A (en) * | 1995-04-12 | 1999-01-05 | Northrop Grumman Corporation | Process of vacuum annealing a thin film metallization on high purity alumina |
| US5691004A (en) * | 1996-07-11 | 1997-11-25 | Ford Global Technologies, Inc. | Method of treating light metal cylinder bore walls to receive thermal sprayed metal coatings |
| JPH10167859A (ja) * | 1996-12-05 | 1998-06-23 | Ngk Insulators Ltd | セラミックス部品およびその製造方法 |
| US6641939B1 (en) | 1998-07-01 | 2003-11-04 | The Morgan Crucible Company Plc | Transition metal oxide doped alumina and methods of making and using |
| KR102105639B1 (ko) * | 2019-03-28 | 2020-04-28 | 주식회사 엘지화학 | 면역 검사 장치 및 면역 검사 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2885310A (en) * | 1954-09-13 | 1959-05-05 | Ohmite Mfg Company | Method and apparatus for making film resistors |
| US2901381A (en) * | 1956-10-12 | 1959-08-25 | Bell Telephone Labor Inc | Method of making electrical resistors |
| US3032397A (en) * | 1957-01-25 | 1962-05-01 | Du Pont | Preparation of metal nitride pigment flakes |
| US3212918A (en) * | 1962-05-28 | 1965-10-19 | Ibm | Electroless plating process |
| GB1247007A (en) * | 1968-04-04 | 1971-09-22 | Atomic Energy Authority Uk | Improvements in or relating to electroless plating processes |
| JPS502607B1 (en:Method) * | 1968-08-10 | 1975-01-28 |
-
1971
- 1971-04-16 US US00134665A patent/US3791861A/en not_active Expired - Lifetime
- 1971-12-14 CA CA130111A patent/CA929280A/en not_active Expired
-
1972
- 1972-04-07 SE SE7204532A patent/SE378972B/xx unknown
- 1972-04-12 IT IT49558/72A patent/IT954427B/it active
- 1972-04-12 DE DE2217573A patent/DE2217573C3/de not_active Expired
- 1972-04-12 GB GB1680972A patent/GB1389326A/en not_active Expired
- 1972-04-14 BE BE782119A patent/BE782119A/xx unknown
- 1972-04-14 NL NL7205052A patent/NL7205052A/xx not_active Application Discontinuation
- 1972-04-14 FR FR7213279A patent/FR2133777B1/fr not_active Expired
- 1972-04-14 CH CH550772A patent/CH584960A5/xx not_active IP Right Cessation
- 1972-04-17 JP JP47037859A patent/JPS5143570B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA929280A (en) | 1973-06-26 |
| JPS4743969A (en:Method) | 1972-12-20 |
| DE2217573A1 (de) | 1972-11-02 |
| GB1389326A (en) | 1975-04-03 |
| NL7205052A (en:Method) | 1972-10-18 |
| CH584960A5 (en:Method) | 1977-02-15 |
| IT954427B (it) | 1973-08-30 |
| BE782119A (fr) | 1972-07-31 |
| DE2217573B2 (de) | 1974-02-14 |
| US3791861A (en) | 1974-02-12 |
| JPS5143570B1 (en:Method) | 1976-11-22 |
| FR2133777B1 (en:Method) | 1974-12-20 |
| SE378972B (en:Method) | 1975-09-15 |
| FR2133777A1 (en:Method) | 1972-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| EHJ | Ceased/non-payment of the annual fee |