DE2153284C3 - Schaltungsanordnung zur Einstellung gewählter Feldeffektbauelemente einer Speichermatrix ohne Störung der nicht gewählten Elemente - Google Patents
Schaltungsanordnung zur Einstellung gewählter Feldeffektbauelemente einer Speichermatrix ohne Störung der nicht gewählten ElementeInfo
- Publication number
- DE2153284C3 DE2153284C3 DE2153284A DE2153284A DE2153284C3 DE 2153284 C3 DE2153284 C3 DE 2153284C3 DE 2153284 A DE2153284 A DE 2153284A DE 2153284 A DE2153284 A DE 2153284A DE 2153284 C3 DE2153284 C3 DE 2153284C3
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- matrix
- transistors
- elements
- volts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 title claims description 29
- 230000005669 field effect Effects 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 108090000623 proteins and genes Proteins 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims 7
- 238000010276 construction Methods 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11187571A | 1971-02-02 | 1971-02-02 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2153284A1 DE2153284A1 (de) | 1972-08-17 |
| DE2153284B2 DE2153284B2 (de) | 1974-05-22 |
| DE2153284C3 true DE2153284C3 (de) | 1975-01-16 |
Family
ID=22340904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2153284A Expired DE2153284C3 (de) | 1971-02-02 | 1971-10-26 | Schaltungsanordnung zur Einstellung gewählter Feldeffektbauelemente einer Speichermatrix ohne Störung der nicht gewählten Elemente |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3702990A (https=) |
| JP (1) | JPS529340B1 (https=) |
| AU (1) | AU451926B2 (https=) |
| CA (1) | CA983168A (https=) |
| DE (1) | DE2153284C3 (https=) |
| FR (1) | FR2124219B1 (https=) |
| GB (1) | GB1362051A (https=) |
| NL (1) | NL7115067A (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
| US3911464A (en) * | 1973-05-29 | 1975-10-07 | Ibm | Nonvolatile semiconductor memory |
| US3858060A (en) * | 1973-06-07 | 1974-12-31 | Ibm | Integrated driver circuit |
| US3970865A (en) * | 1973-06-11 | 1976-07-20 | Signetics Corporation | Pseudo-complementary decode driver |
| US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
| GB1502270A (en) * | 1974-10-30 | 1978-03-01 | Hitachi Ltd | Word line driver circuit in memory circuit |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| US4099069A (en) * | 1976-10-08 | 1978-07-04 | Westinghouse Electric Corp. | Circuit producing a common clear signal for erasing selected arrays in a mnos memory system |
| US4575823A (en) * | 1982-08-17 | 1986-03-11 | Westinghouse Electric Corp. | Electrically alterable non-volatile memory |
| JPH10209854A (ja) * | 1997-01-23 | 1998-08-07 | Mitsubishi Electric Corp | ボディ電圧制御型半導体集積回路 |
| US5929695A (en) * | 1997-06-02 | 1999-07-27 | Stmicroelectronics, Inc. | Integrated circuit having selective bias of transistors for low voltage and low standby current and related methods |
| US6049230A (en) * | 1998-03-06 | 2000-04-11 | International Business Machines Corporation | Silicon on insulator domino logic circuits |
| CN110838318A (zh) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | 提高存储器数据可靠性的方法和系统 |
-
1971
- 1971-02-02 US US111875A patent/US3702990A/en not_active Expired - Lifetime
- 1971-10-26 GB GB4963971A patent/GB1362051A/en not_active Expired
- 1971-10-26 DE DE2153284A patent/DE2153284C3/de not_active Expired
- 1971-10-28 AU AU35090/71A patent/AU451926B2/en not_active Expired
- 1971-10-29 CA CA126,520A patent/CA983168A/en not_active Expired
- 1971-11-01 JP JP46087087A patent/JPS529340B1/ja active Pending
- 1971-11-02 FR FR7139263A patent/FR2124219B1/fr not_active Expired
- 1971-11-02 NL NL7115067A patent/NL7115067A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2124219B1 (https=) | 1976-09-03 |
| DE2153284A1 (de) | 1972-08-17 |
| CA983168A (en) | 1976-02-03 |
| NL7115067A (https=) | 1972-08-04 |
| AU3509071A (en) | 1973-05-03 |
| DE2153284B2 (de) | 1974-05-22 |
| JPS529340B1 (https=) | 1977-03-15 |
| GB1362051A (en) | 1974-07-30 |
| FR2124219A1 (https=) | 1972-09-22 |
| US3702990A (en) | 1972-11-14 |
| AU451926B2 (en) | 1974-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |