NL7115067A - - Google Patents
Info
- Publication number
- NL7115067A NL7115067A NL7115067A NL7115067A NL7115067A NL 7115067 A NL7115067 A NL 7115067A NL 7115067 A NL7115067 A NL 7115067A NL 7115067 A NL7115067 A NL 7115067A NL 7115067 A NL7115067 A NL 7115067A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11187571A | 1971-02-02 | 1971-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7115067A true NL7115067A (xx) | 1972-08-04 |
Family
ID=22340904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7115067A NL7115067A (xx) | 1971-02-02 | 1971-11-02 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3702990A (xx) |
| JP (1) | JPS529340B1 (xx) |
| AU (1) | AU451926B2 (xx) |
| CA (1) | CA983168A (xx) |
| DE (1) | DE2153284C3 (xx) |
| FR (1) | FR2124219B1 (xx) |
| GB (1) | GB1362051A (xx) |
| NL (1) | NL7115067A (xx) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
| US3911464A (en) * | 1973-05-29 | 1975-10-07 | Ibm | Nonvolatile semiconductor memory |
| US3858060A (en) * | 1973-06-07 | 1974-12-31 | Ibm | Integrated driver circuit |
| US3970865A (en) * | 1973-06-11 | 1976-07-20 | Signetics Corporation | Pseudo-complementary decode driver |
| US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
| GB1502270A (en) * | 1974-10-30 | 1978-03-01 | Hitachi Ltd | Word line driver circuit in memory circuit |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| US4099069A (en) * | 1976-10-08 | 1978-07-04 | Westinghouse Electric Corp. | Circuit producing a common clear signal for erasing selected arrays in a mnos memory system |
| US4575823A (en) * | 1982-08-17 | 1986-03-11 | Westinghouse Electric Corp. | Electrically alterable non-volatile memory |
| JPH10209854A (ja) * | 1997-01-23 | 1998-08-07 | Mitsubishi Electric Corp | ボディ電圧制御型半導体集積回路 |
| US5929695A (en) * | 1997-06-02 | 1999-07-27 | Stmicroelectronics, Inc. | Integrated circuit having selective bias of transistors for low voltage and low standby current and related methods |
| US6049230A (en) * | 1998-03-06 | 2000-04-11 | International Business Machines Corporation | Silicon on insulator domino logic circuits |
| CN110838318A (zh) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | 提高存储器数据可靠性的方法和系统 |
-
1971
- 1971-02-02 US US111875A patent/US3702990A/en not_active Expired - Lifetime
- 1971-10-26 GB GB4963971A patent/GB1362051A/en not_active Expired
- 1971-10-26 DE DE2153284A patent/DE2153284C3/de not_active Expired
- 1971-10-28 AU AU35090/71A patent/AU451926B2/en not_active Expired
- 1971-10-29 CA CA126,520A patent/CA983168A/en not_active Expired
- 1971-11-01 JP JP46087087A patent/JPS529340B1/ja active Pending
- 1971-11-02 FR FR7139263A patent/FR2124219B1/fr not_active Expired
- 1971-11-02 NL NL7115067A patent/NL7115067A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS529340B1 (xx) | 1977-03-15 |
| AU3509071A (en) | 1973-05-03 |
| CA983168A (en) | 1976-02-03 |
| DE2153284A1 (de) | 1972-08-17 |
| AU451926B2 (en) | 1974-08-22 |
| DE2153284C3 (de) | 1975-01-16 |
| GB1362051A (en) | 1974-07-30 |
| FR2124219B1 (xx) | 1976-09-03 |
| DE2153284B2 (de) | 1974-05-22 |
| FR2124219A1 (xx) | 1972-09-22 |
| US3702990A (en) | 1972-11-14 |