DE2152706C3 - Monolithischer integrierter Halbleiterspeicher für binäre Daten - Google Patents
Monolithischer integrierter Halbleiterspeicher für binäre DatenInfo
- Publication number
- DE2152706C3 DE2152706C3 DE2152706A DE2152706A DE2152706C3 DE 2152706 C3 DE2152706 C3 DE 2152706C3 DE 2152706 A DE2152706 A DE 2152706A DE 2152706 A DE2152706 A DE 2152706A DE 2152706 C3 DE2152706 C3 DE 2152706C3
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- emitter
- base
- transistors
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000011159 matrix material Substances 0.000 claims description 11
- 102220502005 U3 small nucleolar RNA-interacting protein 2_E16R_mutation Human genes 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 45
- 238000010586 diagram Methods 0.000 description 5
- 210000000352 storage cell Anatomy 0.000 description 2
- 101150087426 Gnal gene Proteins 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
- H03K3/2885—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8553670A | 1970-10-30 | 1970-10-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2152706A1 DE2152706A1 (de) | 1972-05-18 |
| DE2152706B2 DE2152706B2 (de) | 1973-04-12 |
| DE2152706C3 true DE2152706C3 (de) | 1973-10-31 |
Family
ID=22192263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2152706A Expired DE2152706C3 (de) | 1970-10-30 | 1971-10-22 | Monolithischer integrierter Halbleiterspeicher für binäre Daten |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3725878A (enExample) |
| JP (1) | JPS5246462B1 (enExample) |
| AU (1) | AU3425671A (enExample) |
| BE (1) | BE774701A (enExample) |
| CA (1) | CA983167A (enExample) |
| CH (1) | CH529420A (enExample) |
| DE (1) | DE2152706C3 (enExample) |
| FR (1) | FR2112364B1 (enExample) |
| GB (1) | GB1348327A (enExample) |
| NL (1) | NL7114913A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916394A (en) * | 1974-12-09 | 1975-10-28 | Honeywell Inf Systems | High-speed random access memory |
| JPS5375828A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Semiconductor circuit |
| JPS5478166U (enExample) * | 1977-11-12 | 1979-06-02 | ||
| FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
| US4311925A (en) * | 1979-09-17 | 1982-01-19 | International Business Machines Corporation | Current switch emitter follower latch having output signals with reduced noise |
| US4272811A (en) * | 1979-10-15 | 1981-06-09 | Advanced Micro Devices, Inc. | Write and read control circuit for semiconductor memories |
| JPS6028076B2 (ja) * | 1980-12-25 | 1985-07-02 | 富士通株式会社 | 半導体メモリの書込み回路 |
| JPH0655940U (ja) * | 1993-01-14 | 1994-08-02 | 三島工業株式会社 | スノーボブスレー |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
| US3492661A (en) * | 1965-12-17 | 1970-01-27 | Ibm | Monolithic associative memory cell |
| US3636377A (en) * | 1970-07-21 | 1972-01-18 | Semi Conductor Electronic Memo | Bipolar semiconductor random access memory |
-
1970
- 1970-10-30 US US00085536A patent/US3725878A/en not_active Expired - Lifetime
-
1971
- 1971-09-16 FR FR7133817A patent/FR2112364B1/fr not_active Expired
- 1971-09-22 GB GB4410271A patent/GB1348327A/en not_active Expired
- 1971-10-06 AU AU34256/71A patent/AU3425671A/en not_active Expired
- 1971-10-15 CH CH1507071A patent/CH529420A/de not_active IP Right Cessation
- 1971-10-18 CA CA125,320A patent/CA983167A/en not_active Expired
- 1971-10-22 DE DE2152706A patent/DE2152706C3/de not_active Expired
- 1971-10-27 JP JP46084732A patent/JPS5246462B1/ja active Pending
- 1971-10-29 NL NL7114913A patent/NL7114913A/xx unknown
- 1971-10-29 BE BE774701A patent/BE774701A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1348327A (en) | 1974-03-13 |
| DE2152706A1 (de) | 1972-05-18 |
| US3725878A (en) | 1973-04-03 |
| CA983167A (en) | 1976-02-03 |
| FR2112364A1 (enExample) | 1972-06-16 |
| DE2152706B2 (de) | 1973-04-12 |
| AU3425671A (en) | 1973-04-12 |
| CH529420A (de) | 1972-10-15 |
| FR2112364B1 (enExample) | 1974-05-31 |
| NL7114913A (enExample) | 1972-05-03 |
| BE774701A (fr) | 1972-02-14 |
| JPS5246462B1 (enExample) | 1977-11-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |