CH529420A - Monolithischer integrierter Halbleiterspeicher für binäre Daten - Google Patents

Monolithischer integrierter Halbleiterspeicher für binäre Daten

Info

Publication number
CH529420A
CH529420A CH1507071A CH1507071A CH529420A CH 529420 A CH529420 A CH 529420A CH 1507071 A CH1507071 A CH 1507071A CH 1507071 A CH1507071 A CH 1507071A CH 529420 A CH529420 A CH 529420A
Authority
CH
Switzerland
Prior art keywords
semiconductor memory
binary data
integrated semiconductor
monolithic integrated
monolithic
Prior art date
Application number
CH1507071A
Other languages
German (de)
English (en)
Inventor
R Berding Andrew
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH529420A publication Critical patent/CH529420A/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H03K3/2885Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CH1507071A 1970-10-30 1971-10-15 Monolithischer integrierter Halbleiterspeicher für binäre Daten CH529420A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8553670A 1970-10-30 1970-10-30

Publications (1)

Publication Number Publication Date
CH529420A true CH529420A (de) 1972-10-15

Family

ID=22192263

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1507071A CH529420A (de) 1970-10-30 1971-10-15 Monolithischer integrierter Halbleiterspeicher für binäre Daten

Country Status (10)

Country Link
US (1) US3725878A (enExample)
JP (1) JPS5246462B1 (enExample)
AU (1) AU3425671A (enExample)
BE (1) BE774701A (enExample)
CA (1) CA983167A (enExample)
CH (1) CH529420A (enExample)
DE (1) DE2152706C3 (enExample)
FR (1) FR2112364B1 (enExample)
GB (1) GB1348327A (enExample)
NL (1) NL7114913A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916394A (en) * 1974-12-09 1975-10-28 Honeywell Inf Systems High-speed random access memory
JPS5375828A (en) * 1976-12-17 1978-07-05 Hitachi Ltd Semiconductor circuit
JPS5478166U (enExample) * 1977-11-12 1979-06-02
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
US4311925A (en) * 1979-09-17 1982-01-19 International Business Machines Corporation Current switch emitter follower latch having output signals with reduced noise
US4272811A (en) * 1979-10-15 1981-06-09 Advanced Micro Devices, Inc. Write and read control circuit for semiconductor memories
JPS6028076B2 (ja) * 1980-12-25 1985-07-02 富士通株式会社 半導体メモリの書込み回路
JPH0655940U (ja) * 1993-01-14 1994-08-02 三島工業株式会社 スノーボブスレー

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3492661A (en) * 1965-12-17 1970-01-27 Ibm Monolithic associative memory cell
US3636377A (en) * 1970-07-21 1972-01-18 Semi Conductor Electronic Memo Bipolar semiconductor random access memory

Also Published As

Publication number Publication date
FR2112364B1 (enExample) 1974-05-31
DE2152706A1 (de) 1972-05-18
CA983167A (en) 1976-02-03
JPS5246462B1 (enExample) 1977-11-25
AU3425671A (en) 1973-04-12
US3725878A (en) 1973-04-03
FR2112364A1 (enExample) 1972-06-16
BE774701A (fr) 1972-02-14
GB1348327A (en) 1974-03-13
DE2152706B2 (de) 1973-04-12
DE2152706C3 (de) 1973-10-31
NL7114913A (enExample) 1972-05-03

Similar Documents

Publication Publication Date Title
DK129016B (da) Dataaflæsningsanlæg.
CH476365A (de) Monolithischer Halbleiterspeicher
CH529418A (de) Speicheranordnung für binäre Daten
CH552252A (de) Datenkarte.
CH554052A (de) Integrierter halbleiterdatenspeicher, der einzelne defekte speicherzellen enthalten kann.
NL163040C (nl) Magnetisch schijvengeheugen.
CH531772A (de) Integrierte monolithische Halbleiterspeichereinrichtung
NL170472C (nl) Schuifregistergeheugen.
CH539914A (de) Halbleiterspeicher
NL180892C (nl) Halfgeleidergeheugen.
NL178368C (nl) Halfgeleidergeheugen.
CH539918A (de) Binäre Speicherschaltung
CH525093A (de) Druckvorrichtung für Datenträger
CH529420A (de) Monolithischer integrierter Halbleiterspeicher für binäre Daten
CH539913A (de) Datenspeicher
AT334662B (de) Hochintegrierter halbleiterspeicher
CH529419A (de) Decodierschaltung für binäre Datenspeicher
NL176405C (nl) Geintegreerde halfgeleidergeheugeninrichting.
CH527432A (de) Helogrammspeicher
NL171753C (nl) Geintegreerd halfgeleidergeheugen.
BE762917A (nl) Informatie-uitlees-apparaat
AT317586B (de) Pufferspeicher für Datenverarbeitungssysteme
AR194515A1 (es) Memoria de informacion de funcionamiento supervisado particularmente memoria de semiconductores integrados
NL152118B (nl) Halfgeleider-leesgeheugenmatrix.
AT318946B (de) Aufzeichnungsträger für Registrierzwecke

Legal Events

Date Code Title Description
PL Patent ceased