JPS5246462B1 - - Google Patents
Info
- Publication number
- JPS5246462B1 JPS5246462B1 JP46084732A JP8473271A JPS5246462B1 JP S5246462 B1 JPS5246462 B1 JP S5246462B1 JP 46084732 A JP46084732 A JP 46084732A JP 8473271 A JP8473271 A JP 8473271A JP S5246462 B1 JPS5246462 B1 JP S5246462B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
- H03K3/2885—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8553670A | 1970-10-30 | 1970-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5246462B1 true JPS5246462B1 (ja) | 1977-11-25 |
Family
ID=22192263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46084732A Pending JPS5246462B1 (ja) | 1970-10-30 | 1971-10-27 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3725878A (ja) |
| JP (1) | JPS5246462B1 (ja) |
| AU (1) | AU3425671A (ja) |
| BE (1) | BE774701A (ja) |
| CA (1) | CA983167A (ja) |
| CH (1) | CH529420A (ja) |
| DE (1) | DE2152706C3 (ja) |
| FR (1) | FR2112364B1 (ja) |
| GB (1) | GB1348327A (ja) |
| NL (1) | NL7114913A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478166U (ja) * | 1977-11-12 | 1979-06-02 | ||
| JPH0655940U (ja) * | 1993-01-14 | 1994-08-02 | 三島工業株式会社 | スノーボブスレー |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916394A (en) * | 1974-12-09 | 1975-10-28 | Honeywell Inf Systems | High-speed random access memory |
| JPS5375828A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Semiconductor circuit |
| FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
| US4311925A (en) * | 1979-09-17 | 1982-01-19 | International Business Machines Corporation | Current switch emitter follower latch having output signals with reduced noise |
| US4272811A (en) * | 1979-10-15 | 1981-06-09 | Advanced Micro Devices, Inc. | Write and read control circuit for semiconductor memories |
| JPS6028076B2 (ja) * | 1980-12-25 | 1985-07-02 | 富士通株式会社 | 半導体メモリの書込み回路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
| US3492661A (en) * | 1965-12-17 | 1970-01-27 | Ibm | Monolithic associative memory cell |
| US3636377A (en) * | 1970-07-21 | 1972-01-18 | Semi Conductor Electronic Memo | Bipolar semiconductor random access memory |
-
1970
- 1970-10-30 US US00085536A patent/US3725878A/en not_active Expired - Lifetime
-
1971
- 1971-09-16 FR FR7133817A patent/FR2112364B1/fr not_active Expired
- 1971-09-22 GB GB4410271A patent/GB1348327A/en not_active Expired
- 1971-10-06 AU AU34256/71A patent/AU3425671A/en not_active Expired
- 1971-10-15 CH CH1507071A patent/CH529420A/de not_active IP Right Cessation
- 1971-10-18 CA CA125,320A patent/CA983167A/en not_active Expired
- 1971-10-22 DE DE2152706A patent/DE2152706C3/de not_active Expired
- 1971-10-27 JP JP46084732A patent/JPS5246462B1/ja active Pending
- 1971-10-29 NL NL7114913A patent/NL7114913A/xx unknown
- 1971-10-29 BE BE774701A patent/BE774701A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478166U (ja) * | 1977-11-12 | 1979-06-02 | ||
| JPH0655940U (ja) * | 1993-01-14 | 1994-08-02 | 三島工業株式会社 | スノーボブスレー |
Also Published As
| Publication number | Publication date |
|---|---|
| AU3425671A (en) | 1973-04-12 |
| US3725878A (en) | 1973-04-03 |
| CA983167A (en) | 1976-02-03 |
| BE774701A (fr) | 1972-02-14 |
| FR2112364A1 (ja) | 1972-06-16 |
| DE2152706A1 (de) | 1972-05-18 |
| DE2152706B2 (de) | 1973-04-12 |
| DE2152706C3 (de) | 1973-10-31 |
| FR2112364B1 (ja) | 1974-05-31 |
| CH529420A (de) | 1972-10-15 |
| GB1348327A (en) | 1974-03-13 |
| NL7114913A (ja) | 1972-05-03 |