DE2134528A1 - - Google Patents

Info

Publication number
DE2134528A1
DE2134528A1 DE19712134528 DE2134528A DE2134528A1 DE 2134528 A1 DE2134528 A1 DE 2134528A1 DE 19712134528 DE19712134528 DE 19712134528 DE 2134528 A DE2134528 A DE 2134528A DE 2134528 A1 DE2134528 A1 DE 2134528A1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
highly conductive
gate
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19712134528
Other languages
German (de)
English (en)
Other versions
DE2134528B2 (de
Inventor
Peter Dr. Zürich Wolf (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2134528A1 publication Critical patent/DE2134528A1/de
Publication of DE2134528B2 publication Critical patent/DE2134528B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE2134528A 1970-09-02 1971-07-10 Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung Ceased DE2134528B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor

Publications (2)

Publication Number Publication Date
DE2134528A1 true DE2134528A1 (https=) 1972-04-13
DE2134528B2 DE2134528B2 (de) 1979-04-19

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2134528A Ceased DE2134528B2 (de) 1970-09-02 1971-07-10 Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung

Country Status (5)

Country Link
JP (1) JPS55913B1 (https=)
CH (1) CH506188A (https=)
DE (1) DE2134528B2 (https=)
FR (1) FR2105175B1 (https=)
GB (1) GB1332060A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung
CN114582835B (zh) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 反熔丝结构及其制作方法、反熔丝阵列、存储装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (de) * M. MERKELBACH in Grenzhausen bei Coblenz Thongefäfse mit durchsichtiger Wandung
DE1067936B (https=) * 1958-02-04 1959-10-29
NL300609A (https=) * 1958-06-14 1967-06-26
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
US3519479A (en) * 1965-12-16 1970-07-07 Matsushita Electronics Corp Method of manufacturing semiconductor device
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
CH497792A (de) * 1968-06-28 1970-10-15 Ibm Verfahren zur Herstellung von Halbleitervorrichtungen

Also Published As

Publication number Publication date
DE2134528B2 (de) 1979-04-19
FR2105175A1 (https=) 1972-04-28
GB1332060A (en) 1973-10-03
JPS55913B1 (https=) 1980-01-10
CH506188A (de) 1971-04-15
FR2105175B1 (https=) 1976-05-28

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Legal Events

Date Code Title Description
8235 Patent refused