DE2129269A1 - Bistabiles Halbleiterelement - Google Patents
Bistabiles HalbleiterelementInfo
- Publication number
- DE2129269A1 DE2129269A1 DE19712129269 DE2129269A DE2129269A1 DE 2129269 A1 DE2129269 A1 DE 2129269A1 DE 19712129269 DE19712129269 DE 19712129269 DE 2129269 A DE2129269 A DE 2129269A DE 2129269 A1 DE2129269 A1 DE 2129269A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor element
- zone
- element according
- low
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000000463 material Substances 0.000 claims description 106
- 230000007704 transition Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 description 25
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000002688 persistence Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 210000004602 germ cell Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4694370A | 1970-06-17 | 1970-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2129269A1 true DE2129269A1 (de) | 1971-12-23 |
Family
ID=21946212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712129269 Pending DE2129269A1 (de) | 1970-06-17 | 1971-06-12 | Bistabiles Halbleiterelement |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5131066B1 (enrdf_load_stackoverflow) |
| CH (1) | CH521024A (enrdf_load_stackoverflow) |
| DE (1) | DE2129269A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2095305B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1300528A (enrdf_load_stackoverflow) |
| NL (1) | NL7107536A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2223245A1 (de) * | 1971-06-21 | 1973-01-11 | Ibm | Informationsspeicher |
| DE3118799A1 (de) * | 1980-05-16 | 1982-03-18 | Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva | Halbleiterspeicher |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5890790A (ja) * | 1981-08-07 | 1983-05-30 | ザ ブリテイッシュ ペトロレアム カンパニ− ピ−．エル．シ− | 半導体装置 |
| US4665504A (en) * | 1982-11-26 | 1987-05-12 | The British Petroleum Company | Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1969C (de) * | J. STEZALY in Breslau | Eisschlittschuh |
-
1971
- 1971-04-29 FR FR7116461*A patent/FR2095305B1/fr not_active Expired
- 1971-05-07 GB GB03624/71A patent/GB1300528A/en not_active Expired
- 1971-05-17 JP JP46032573A patent/JPS5131066B1/ja active Pending
- 1971-06-02 NL NL7107536A patent/NL7107536A/xx unknown
- 1971-06-11 CH CH850471A patent/CH521024A/de not_active IP Right Cessation
- 1971-06-12 DE DE19712129269 patent/DE2129269A1/de active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2223245A1 (de) * | 1971-06-21 | 1973-01-11 | Ibm | Informationsspeicher |
| DE3118799A1 (de) * | 1980-05-16 | 1982-03-18 | Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva | Halbleiterspeicher |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1300528A (en) | 1972-12-20 |
| FR2095305B1 (enrdf_load_stackoverflow) | 1976-03-19 |
| CH521024A (de) | 1972-03-31 |
| NL7107536A (enrdf_load_stackoverflow) | 1971-12-21 |
| FR2095305A1 (enrdf_load_stackoverflow) | 1972-02-11 |
| JPS5131066B1 (enrdf_load_stackoverflow) | 1976-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |