DE69106646T2 - Herstellungsverfahren für eine blaues Licht emittierende ZnSe-Vorrichtung. - Google Patents
Herstellungsverfahren für eine blaues Licht emittierende ZnSe-Vorrichtung.Info
- Publication number
- DE69106646T2 DE69106646T2 DE69106646T DE69106646T DE69106646T2 DE 69106646 T2 DE69106646 T2 DE 69106646T2 DE 69106646 T DE69106646 T DE 69106646T DE 69106646 T DE69106646 T DE 69106646T DE 69106646 T2 DE69106646 T2 DE 69106646T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- blue light
- emitting
- emitting znse
- znse device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02409—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25592390A JP2913808B2 (ja) | 1990-09-25 | 1990-09-25 | ZnSe青色発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69106646D1 DE69106646D1 (de) | 1995-02-23 |
DE69106646T2 true DE69106646T2 (de) | 1995-08-03 |
Family
ID=17285449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69106646T Expired - Fee Related DE69106646T2 (de) | 1990-09-25 | 1991-09-11 | Herstellungsverfahren für eine blaues Licht emittierende ZnSe-Vorrichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5192419A (de) |
EP (1) | EP0478179B1 (de) |
JP (1) | JP2913808B2 (de) |
DE (1) | DE69106646T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
WO1992016966A1 (en) * | 1991-03-18 | 1992-10-01 | Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
US6953703B2 (en) * | 1991-03-18 | 2005-10-11 | The Trustees Of Boston University | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
US5804842A (en) * | 1995-06-20 | 1998-09-08 | Nec Research Institute, Inc. | Optically writing erasable conductive patterns at a bandgap-engineered heterojunction |
DE29511927U1 (de) * | 1995-07-24 | 1997-01-09 | Thera Ges Fuer Patente | Lichtpolymerisationsgerät |
US6503578B1 (en) | 2000-05-05 | 2003-01-07 | National Science Council | Method for preparing ZnSe thin films by ion-assisted continuous wave CO2 laser deposition |
US9981435B2 (en) | 2014-12-17 | 2018-05-29 | Novartis Ag | Reusable lens molds and methods of use thereof |
US10358739B2 (en) | 2016-12-15 | 2019-07-23 | The United States Of America, As Represented By The Secretary Of The Air Force | Heteroepitaxial hydrothermal crystal growth of zinc selenide |
CN114335447B (zh) * | 2021-12-28 | 2023-09-01 | 北京航空航天大学 | 一种提高锌负极性能的表面处理方法和应用 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4256544A (en) * | 1980-04-04 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Method of making metal-chalcogenide photosensitive devices |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
US4626322A (en) * | 1983-08-01 | 1986-12-02 | Union Oil Company Of California | Photoelectrochemical preparation of a solid-state semiconductor photonic device |
US4536260A (en) * | 1984-05-14 | 1985-08-20 | University Of Guelph | Thin film cadmium selenide electrodeposited from selenosulphite solution |
FR2569427B1 (fr) * | 1984-08-23 | 1986-11-14 | Commissariat Energie Atomique | Procede et dispositif de depot sur un substrat d'une couche mince d'un compose comportant au moins un constituant cationique et au moins un constituant anionique |
-
1990
- 1990-09-25 JP JP25592390A patent/JP2913808B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-11 EP EP91308317A patent/EP0478179B1/de not_active Expired - Lifetime
- 1991-09-11 DE DE69106646T patent/DE69106646T2/de not_active Expired - Fee Related
- 1991-09-25 US US07/765,425 patent/US5192419A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04133367A (ja) | 1992-05-07 |
EP0478179B1 (de) | 1995-01-11 |
EP0478179A2 (de) | 1992-04-01 |
US5192419A (en) | 1993-03-09 |
JP2913808B2 (ja) | 1999-06-28 |
DE69106646D1 (de) | 1995-02-23 |
EP0478179A3 (en) | 1992-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: WESER & KOLLEGEN, 81245 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |