DE69425530T2 - GaP-Substrat für eine rein grünes Licht emittierende Vorrichtung - Google Patents

GaP-Substrat für eine rein grünes Licht emittierende Vorrichtung

Info

Publication number
DE69425530T2
DE69425530T2 DE69425530T DE69425530T DE69425530T2 DE 69425530 T2 DE69425530 T2 DE 69425530T2 DE 69425530 T DE69425530 T DE 69425530T DE 69425530 T DE69425530 T DE 69425530T DE 69425530 T2 DE69425530 T2 DE 69425530T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
green light
gap substrate
purely green
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425530T
Other languages
English (en)
Other versions
DE69425530D1 (de
Inventor
Masahisa Endo
Akio Nakamura
Susumu Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69425530D1 publication Critical patent/DE69425530D1/de
Publication of DE69425530T2 publication Critical patent/DE69425530T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE69425530T 1993-05-31 1994-05-16 GaP-Substrat für eine rein grünes Licht emittierende Vorrichtung Expired - Fee Related DE69425530T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15416893A JP2817577B2 (ja) 1993-05-31 1993-05-31 ＧａＰ純緑色発光素子基板

Publications (2)

Publication Number Publication Date
DE69425530D1 DE69425530D1 (de) 2000-09-21
DE69425530T2 true DE69425530T2 (de) 2001-04-26

Family

ID=15578322

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425530T Expired - Fee Related DE69425530T2 (de) 1993-05-31 1994-05-16 GaP-Substrat für eine rein grünes Licht emittierende Vorrichtung

Country Status (4)

Country Link
US (1) US5406093A (de)
EP (1) EP0631330B1 (de)
JP (1) JP2817577B2 (de)
DE (1) DE69425530T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650641A (en) * 1994-09-01 1997-07-22 Toyoda Gosei Co., Ltd. Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
JP3624451B2 (ja) * 1995-03-17 2005-03-02 昭和電工株式会社 発光素子用ＧａＰエピタキシャル基板
JP3356041B2 (ja) * 1997-02-17 2002-12-09 昭和電工株式会社 リン化ガリウム緑色発光素子
EP1156534A4 (de) * 1999-10-29 2006-09-06 Shinetsu Handotai Kk Galiumphosphid-lumineszensbauelement
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606552B2 (ja) * 1979-02-15 1985-02-19 株式会社東芝 リン化ガリウム緑色発光素子
JPS5793589A (en) * 1980-12-02 1982-06-10 Semiconductor Res Found Gap light emitting diode
US4562378A (en) * 1982-07-08 1985-12-31 Sanyo Electric Co., Ltd. Gallium phosphide light-emitting diode
JPS5918688A (ja) * 1982-07-21 1984-01-31 Sanyo Electric Co Ltd ガリウム燐発光ダイオ−ド
JPS5918686A (ja) * 1982-07-21 1984-01-31 Sanyo Electric Co Ltd ガリウム燐発光ダイオ−ド
JPS5922376A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 純緑色発光ダイオ−ドおよびその製造方法
JPH01245569A (ja) * 1988-03-28 1989-09-29 Toshiba Corp ＧａＰ緑色発光素子とその製造方法
JPH04266074A (ja) * 1991-02-20 1992-09-22 Toshiba Corp りん化ガリウム緑色発光素子の製造方法
JP2719870B2 (ja) * 1992-09-30 1998-02-25 信越半導体株式会社 ＧａＰ系発光素子基板及びその製造方法

Also Published As

Publication number Publication date
EP0631330A3 (de) 1995-03-22
EP0631330A2 (de) 1994-12-28
JPH06342935A (ja) 1994-12-13
EP0631330B1 (de) 2000-08-16
JP2817577B2 (ja) 1998-10-30
DE69425530D1 (de) 2000-09-21
US5406093A (en) 1995-04-11

Similar Documents

Publication Publication Date Title
DE69636630D1 (de) Organische elektrolumineszente Vorrichtung
DE69627226D1 (de) Herstellungsverfahren für eine Licht emittierende Halbleitervorrichtung
DE69027697D1 (de) Organische elektrolumineszente Vorrichtung
IT1277977B1 (it) Dispositivi organici di emissione di luce multicolore
DE69310982T2 (de) Organische elektrolumineszente Vorrichtung
DE69006394T2 (de) Organische elektrolumineszente Vorrichtung.
DE69012892D1 (de) Organische elektrolumineszente Vorrichtung.
DE69033837D1 (de) Lichtemittierende Vorrichtung
DE69311755T2 (de) Steuerschaltung für lichtemittierende Vorrichtung
DE19681656T1 (de) Ausrichtvorrichtung für einen Substratträger
DE69406550T2 (de) Elektrolumineszierende vorrichtung
DE69318462D1 (de) Organische elektrolumineszente Vorrichtung
DE69828712D1 (de) Bandlückenisolierte lichtemittierende Vorrichtung
DE69515615T2 (de) Licht messende Vorrichtung
DE69601549T2 (de) Herstellungsverfahren für einen oberflächenemittierenden Laser
DE59610831D1 (de) Treiberschaltung für eine Leuchtdiode
DE69318218T2 (de) Vorrichtung zum Zusammenbau von Komponenten für optische Farbabtaster
DE69115169T2 (de) Vorrichtung zum Mischen von Licht aus Halbleiterlasern.
DE69428578D1 (de) Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen
DE69020367T2 (de) Licht ausstrahlende Vorrichtung.
DE69525865T2 (de) Treiberschaltung für eine Leuchtdiode
DE69313033T2 (de) Lichtemittierende Vorrichtung
DE69723923D1 (de) Herstellungsverfahren für einen Oberflächenemittierenden Laser
DE69427771D1 (de) Vorrichtung mit kurzwelliger Lichtquelle
DE69425530T2 (de) GaP-Substrat für eine rein grünes Licht emittierende Vorrichtung

Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee