DE69828712D1 - Bandlückenisolierte lichtemittierende Vorrichtung - Google Patents
Bandlückenisolierte lichtemittierende VorrichtungInfo
- Publication number
- DE69828712D1 DE69828712D1 DE69828712T DE69828712T DE69828712D1 DE 69828712 D1 DE69828712 D1 DE 69828712D1 DE 69828712 T DE69828712 T DE 69828712T DE 69828712 T DE69828712 T DE 69828712T DE 69828712 D1 DE69828712 D1 DE 69828712D1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting device
- band gap
- isolated light
- gap isolated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/989,734 US6064683A (en) | 1997-12-12 | 1997-12-12 | Bandgap isolated light emitter |
US989734 | 1997-12-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69828712D1 true DE69828712D1 (de) | 2005-02-24 |
DE69828712T2 DE69828712T2 (de) | 2006-04-06 |
Family
ID=25535415
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69828712T Expired - Lifetime DE69828712T2 (de) | 1997-12-12 | 1998-11-20 | Bandlückenisolierte lichtemittierende Vorrichtung |
DE69813899T Expired - Lifetime DE69813899T2 (de) | 1997-12-12 | 1998-11-20 | Bandlückenisolierte lichtemittierende vorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69813899T Expired - Lifetime DE69813899T2 (de) | 1997-12-12 | 1998-11-20 | Bandlückenisolierte lichtemittierende vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6064683A (de) |
EP (2) | EP1315216B1 (de) |
DE (2) | DE69828712T2 (de) |
WO (1) | WO1999031735A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2351390A (en) * | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
US6339496B1 (en) | 1999-06-22 | 2002-01-15 | University Of Maryland | Cavity-less vertical semiconductor optical amplifier |
US6757313B1 (en) | 1999-11-12 | 2004-06-29 | Trumpf Photonics Inc. | Control of current spreading in semiconductor laser diodes |
JP2001281473A (ja) * | 2000-03-28 | 2001-10-10 | Toshiba Corp | フォトニクス結晶及びその製造方法、光モジュール並びに光システム |
US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
KR100345452B1 (ko) * | 2000-12-14 | 2002-07-26 | 한국전자통신연구원 | 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법 |
US6727520B2 (en) * | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
US6782027B2 (en) | 2000-12-29 | 2004-08-24 | Finisar Corporation | Resonant reflector for use with optoelectronic devices |
JP3619155B2 (ja) * | 2001-01-17 | 2005-02-09 | キヤノン株式会社 | 面発光レーザ装置、その製造方法、およびその駆動方法 |
DE10105722B4 (de) * | 2001-02-08 | 2006-12-14 | Osram Opto Semiconductors Gmbh | Halbleiter-Laser mit Vertikalresonator und modenselektiven Gebieten |
TW529211B (en) * | 2001-03-07 | 2003-04-21 | Ying-Jay Yang | Device structure and method for fabricating semiconductor lasers |
US7075954B2 (en) * | 2001-05-29 | 2006-07-11 | Nl Nanosemiconductor Gmbh | Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors |
US6611539B2 (en) * | 2001-05-29 | 2003-08-26 | Nsc Nanosemiconductor Gmbh | Wavelength-tunable vertical cavity surface emitting laser and method of making same |
US6975661B2 (en) * | 2001-06-14 | 2005-12-13 | Finisar Corporation | Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide |
US6904072B2 (en) * | 2001-12-28 | 2005-06-07 | Finisar Corporation | Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer |
US6816526B2 (en) * | 2001-12-28 | 2004-11-09 | Finisar Corporation | Gain guide implant in oxide vertical cavity surface emitting laser |
US6965626B2 (en) * | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
JP2004214911A (ja) * | 2002-12-27 | 2004-07-29 | Sanyo Electric Co Ltd | Agc回路 |
GB2399940A (en) * | 2003-03-25 | 2004-09-29 | Sharp Kk | Vertical cavity surface emitting laser |
US7391329B2 (en) * | 2004-04-13 | 2008-06-24 | Impinj, Inc. | Performance driven adjustment of RFID waveform shape |
US7860137B2 (en) * | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8815617B2 (en) * | 2004-10-01 | 2014-08-26 | Finisar Corporation | Passivation of VCSEL sidewalls |
US7826506B2 (en) * | 2004-10-01 | 2010-11-02 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
CN101432936B (zh) * | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
DE102007046027A1 (de) * | 2007-09-26 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur |
US20100020837A1 (en) * | 2008-07-22 | 2010-01-28 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Semiconductor light emission device having an improved current confinement structure, and method for confining current in a semiconductor light emission device |
JP6135559B2 (ja) * | 2014-03-10 | 2017-05-31 | ソニー株式会社 | 半導体発光素子および半導体発光素子の製造方法ならびに半導体素子 |
US20180278022A1 (en) * | 2017-03-23 | 2018-09-27 | Sumitomo Electric Industries, Ltd. | Surface-emitting semiconductor laser |
DE102017128881A1 (de) * | 2017-12-05 | 2019-06-06 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2440616A1 (fr) * | 1978-10-31 | 1980-05-30 | Bouley Jean Claude | Laser a injection a double heterostructure a profil d'indice de refraction |
JPS60152087A (ja) * | 1984-01-19 | 1985-08-10 | Nec Corp | 多重量子井戸半導体レ−ザの製造方法 |
JPS6170784A (ja) * | 1984-09-14 | 1986-04-11 | Mitsubishi Electric Corp | レ−ザダイオ−ド |
JPH0740619B2 (ja) * | 1985-10-14 | 1995-05-01 | 松下電器産業株式会社 | 半導体レ−ザ装置 |
JPH02114675A (ja) * | 1988-10-25 | 1990-04-26 | Sumitomo Electric Ind Ltd | 半導体発光素子ならびにその製造方法 |
JPH02114676A (ja) * | 1988-10-25 | 1990-04-26 | Sumitomo Electric Ind Ltd | 半導体発光素子ならびにその製造方法 |
US4980893A (en) * | 1989-05-25 | 1990-12-25 | Xerox Corporation | Monolithic high density arrays of independently addressable offset semiconductor laser sources |
US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
US5056098A (en) * | 1990-07-05 | 1991-10-08 | At&T Bell Laboratories | Vertical cavity laser with mirror having controllable reflectivity |
JP2839397B2 (ja) * | 1991-08-26 | 1998-12-16 | 三菱電機株式会社 | 波長可変型半導体レーザ装置 |
US5164949A (en) * | 1991-09-09 | 1992-11-17 | Motorola, Inc. | Vertical cavity surface emitting laser with lateral injection |
US5212702A (en) * | 1992-03-25 | 1993-05-18 | At&T Bell Laboratories | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
US5475701A (en) * | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
US5574738A (en) * | 1995-06-07 | 1996-11-12 | Honeywell Inc. | Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser |
US5608753A (en) * | 1995-06-29 | 1997-03-04 | Xerox Corporation | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material |
US5912913A (en) * | 1995-12-27 | 1999-06-15 | Hitachi, Ltd. | Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser |
US5764674A (en) * | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
US5699375A (en) * | 1996-07-08 | 1997-12-16 | Xerox Corporation | Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors |
US5774487A (en) * | 1996-10-16 | 1998-06-30 | Honeywell Inc. | Filamented multi-wavelength vertical-cavity surface emitting laser |
-
1997
- 1997-12-12 US US08/989,734 patent/US6064683A/en not_active Expired - Lifetime
-
1998
- 1998-11-20 DE DE69828712T patent/DE69828712T2/de not_active Expired - Lifetime
- 1998-11-20 WO PCT/US1998/024702 patent/WO1999031735A1/en active IP Right Grant
- 1998-11-20 DE DE69813899T patent/DE69813899T2/de not_active Expired - Lifetime
- 1998-11-20 EP EP02080608A patent/EP1315216B1/de not_active Expired - Lifetime
- 1998-11-20 EP EP98960291A patent/EP1048081B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1048081B1 (de) | 2003-04-23 |
EP1048081A1 (de) | 2000-11-02 |
WO1999031735A1 (en) | 1999-06-24 |
DE69813899T2 (de) | 2003-12-18 |
US6064683A (en) | 2000-05-16 |
DE69813899D1 (de) | 2003-05-28 |
EP1315216A2 (de) | 2003-05-28 |
DE69828712T2 (de) | 2006-04-06 |
EP1315216B1 (de) | 2005-01-19 |
EP1315216A3 (de) | 2003-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: FINISAR CORP., SUNNYVALE, CALIF., US |
|
8364 | No opposition during term of opposition |