DE69813899T2 - Bandlückenisolierte lichtemittierende vorrichtung - Google Patents

Bandlückenisolierte lichtemittierende vorrichtung

Info

Publication number
DE69813899T2
DE69813899T2 DE69813899T DE69813899T DE69813899T2 DE 69813899 T2 DE69813899 T2 DE 69813899T2 DE 69813899 T DE69813899 T DE 69813899T DE 69813899 T DE69813899 T DE 69813899T DE 69813899 T2 DE69813899 T2 DE 69813899T2
Authority
DE
Germany
Prior art keywords
emittering
insulated light
tape gap
gap insulated
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69813899T
Other languages
English (en)
Other versions
DE69813899D1 (de
Inventor
H Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69813899D1 publication Critical patent/DE69813899D1/de
Publication of DE69813899T2 publication Critical patent/DE69813899T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341Intra-cavity contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322Position of the structure
    • H01S5/1833Position of the structure with more than one structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/17Semiconductor lasers comprising special layers
    • H01S2301/173The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2059Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/305Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/305Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69813899T 1997-12-12 1998-11-20 Bandlückenisolierte lichtemittierende vorrichtung Expired - Lifetime DE69813899T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/989,734 US6064683A (en) 1997-12-12 1997-12-12 Bandgap isolated light emitter
PCT/US1998/024702 WO1999031735A1 (en) 1997-12-12 1998-11-20 Bandgap isolated light emitter

Publications (2)

Publication Number Publication Date
DE69813899D1 DE69813899D1 (de) 2003-05-28
DE69813899T2 true DE69813899T2 (de) 2003-12-18

Family

ID=25535415

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69813899T Expired - Lifetime DE69813899T2 (de) 1997-12-12 1998-11-20 Bandlückenisolierte lichtemittierende vorrichtung
DE69828712T Expired - Lifetime DE69828712T2 (de) 1997-12-12 1998-11-20 Bandlückenisolierte lichtemittierende Vorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69828712T Expired - Lifetime DE69828712T2 (de) 1997-12-12 1998-11-20 Bandlückenisolierte lichtemittierende Vorrichtung

Country Status (4)

Country Link
US (1) US6064683A (de)
EP (2) EP1048081B1 (de)
DE (2) DE69813899T2 (de)
WO (1) WO1999031735A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
US6757313B1 (en) * 1999-11-12 2004-06-29 Trumpf Photonics Inc. Control of current spreading in semiconductor laser diodes
JP2001281473A (ja) 2000-03-28 2001-10-10 Toshiba Corp フォトニクス結晶及びその製造方法、光モジュール並びに光システム
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
KR100345452B1 (ko) * 2000-12-14 2002-07-26 한국전자통신연구원 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법
US6727520B2 (en) 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
JP3619155B2 (ja) * 2001-01-17 2005-02-09 キヤノン株式会社 面発光レーザ装置、その製造方法、およびその駆動方法
DE10105722B4 (de) * 2001-02-08 2006-12-14 Osram Opto Semiconductors Gmbh Halbleiter-Laser mit Vertikalresonator und modenselektiven Gebieten
TW529211B (en) * 2001-03-07 2003-04-21 Ying-Jay Yang Device structure and method for fabricating semiconductor lasers
US7075954B2 (en) * 2001-05-29 2006-07-11 Nl Nanosemiconductor Gmbh Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors
US6611539B2 (en) * 2001-05-29 2003-08-26 Nsc Nanosemiconductor Gmbh Wavelength-tunable vertical cavity surface emitting laser and method of making same
US6975661B2 (en) * 2001-06-14 2005-12-13 Finisar Corporation Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide
US6904072B2 (en) * 2001-12-28 2005-06-07 Finisar Corporation Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer
US6816526B2 (en) * 2001-12-28 2004-11-09 Finisar Corporation Gain guide implant in oxide vertical cavity surface emitting laser
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
JP2004214911A (ja) * 2002-12-27 2004-07-29 Sanyo Electric Co Ltd Agc回路
GB2399940A (en) * 2003-03-25 2004-09-29 Sharp Kk Vertical cavity surface emitting laser
US7391329B2 (en) * 2004-04-13 2008-06-24 Impinj, Inc. Performance driven adjustment of RFID waveform shape
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7826506B2 (en) * 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
DE102007046027A1 (de) * 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
US20100020837A1 (en) * 2008-07-22 2010-01-28 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor light emission device having an improved current confinement structure, and method for confining current in a semiconductor light emission device
JP6135559B2 (ja) 2014-03-10 2017-05-31 ソニー株式会社 半導体発光素子および半導体発光素子の製造方法ならびに半導体素子
US20180278022A1 (en) * 2017-03-23 2018-09-27 Sumitomo Electric Industries, Ltd. Surface-emitting semiconductor laser
DE102017128881A1 (de) 2017-12-05 2019-06-06 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2440616A1 (fr) * 1978-10-31 1980-05-30 Bouley Jean Claude Laser a injection a double heterostructure a profil d'indice de refraction
JPS60152087A (ja) * 1984-01-19 1985-08-10 Nec Corp 多重量子井戸半導体レ−ザの製造方法
JPS6170784A (ja) * 1984-09-14 1986-04-11 Mitsubishi Electric Corp レ−ザダイオ−ド
JPH0740619B2 (ja) * 1985-10-14 1995-05-01 松下電器産業株式会社 半導体レ−ザ装置
JPH02114675A (ja) * 1988-10-25 1990-04-26 Sumitomo Electric Ind Ltd 半導体発光素子ならびにその製造方法
JPH02114676A (ja) * 1988-10-25 1990-04-26 Sumitomo Electric Ind Ltd 半導体発光素子ならびにその製造方法
US4980893A (en) * 1989-05-25 1990-12-25 Xerox Corporation Monolithic high density arrays of independently addressable offset semiconductor laser sources
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5056098A (en) * 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity
JP2839397B2 (ja) * 1991-08-26 1998-12-16 三菱電機株式会社 波長可変型半導体レーザ装置
US5164949A (en) * 1991-09-09 1992-11-17 Motorola, Inc. Vertical cavity surface emitting laser with lateral injection
US5212702A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5608753A (en) * 1995-06-29 1997-03-04 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US5912913A (en) * 1995-12-27 1999-06-15 Hitachi, Ltd. Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser
US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
US5699375A (en) * 1996-07-08 1997-12-16 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US5774487A (en) * 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser

Also Published As

Publication number Publication date
DE69828712T2 (de) 2006-04-06
EP1315216A2 (de) 2003-05-28
EP1315216B1 (de) 2005-01-19
US6064683A (en) 2000-05-16
EP1048081B1 (de) 2003-04-23
EP1315216A3 (de) 2003-10-22
DE69813899D1 (de) 2003-05-28
DE69828712D1 (de) 2005-02-24
WO1999031735A1 (en) 1999-06-24
EP1048081A1 (de) 2000-11-02

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Owner name: FINISAR CORP.(N.D.GES.D.STAATES DELAWARE), SUNNYVA