CH521024A - Bistabile Halbleitervorrichtung mit materialverschiedenem Übergang - Google Patents

Bistabile Halbleitervorrichtung mit materialverschiedenem Übergang

Info

Publication number
CH521024A
CH521024A CH850471A CH850471A CH521024A CH 521024 A CH521024 A CH 521024A CH 850471 A CH850471 A CH 850471A CH 850471 A CH850471 A CH 850471A CH 521024 A CH521024 A CH 521024A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
different transition
bistable semiconductor
bistable
transition
Prior art date
Application number
CH850471A
Other languages
English (en)
Inventor
John Hovel Harold
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH521024A publication Critical patent/CH521024A/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8615Hi-lo semiconductor devices, e.g. memory devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH850471A 1970-06-17 1971-06-11 Bistabile Halbleitervorrichtung mit materialverschiedenem Übergang CH521024A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4694370A 1970-06-17 1970-06-17

Publications (1)

Publication Number Publication Date
CH521024A true CH521024A (de) 1972-03-31

Family

ID=21946212

Family Applications (1)

Application Number Title Priority Date Filing Date
CH850471A CH521024A (de) 1970-06-17 1971-06-11 Bistabile Halbleitervorrichtung mit materialverschiedenem Übergang

Country Status (6)

Country Link
JP (1) JPS5131066B1 (de)
CH (1) CH521024A (de)
DE (1) DE2129269A1 (de)
FR (1) FR2095305B1 (de)
GB (1) GB1300528A (de)
NL (1) NL7107536A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739356A (en) * 1971-06-21 1973-06-12 Ibm Heterojunction information storage unit
SU1005223A1 (ru) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Полупроводниковое запоминающее устройство
EP0072221B1 (de) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Nichtflüchtiges elektrisch programmierbares Speicherbauelement
US4665504A (en) * 1982-11-26 1987-05-12 The British Petroleum Company Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1969C (de) * J. STEZALY in Breslau Eisschlittschuh

Also Published As

Publication number Publication date
GB1300528A (en) 1972-12-20
FR2095305B1 (de) 1976-03-19
DE2129269A1 (de) 1971-12-23
FR2095305A1 (de) 1972-02-11
JPS5131066B1 (de) 1976-09-04
NL7107536A (de) 1971-12-21

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Legal Events

Date Code Title Description
PL Patent ceased