FR2095305A1 - - Google Patents

Info

Publication number
FR2095305A1
FR2095305A1 FR7116461A FR7116461A FR2095305A1 FR 2095305 A1 FR2095305 A1 FR 2095305A1 FR 7116461 A FR7116461 A FR 7116461A FR 7116461 A FR7116461 A FR 7116461A FR 2095305 A1 FR2095305 A1 FR 2095305A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116461A
Other languages
French (fr)
Other versions
FR2095305B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2095305A1 publication Critical patent/FR2095305A1/fr
Application granted granted Critical
Publication of FR2095305B1 publication Critical patent/FR2095305B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
FR7116461A 1970-06-17 1971-04-29 Expired FR2095305B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4694370A 1970-06-17 1970-06-17

Publications (2)

Publication Number Publication Date
FR2095305A1 true FR2095305A1 (de) 1972-02-11
FR2095305B1 FR2095305B1 (de) 1976-03-19

Family

ID=21946212

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116461A Expired FR2095305B1 (de) 1970-06-17 1971-04-29

Country Status (6)

Country Link
JP (1) JPS5131066B1 (de)
CH (1) CH521024A (de)
DE (1) DE2129269A1 (de)
FR (1) FR2095305B1 (de)
GB (1) GB1300528A (de)
NL (1) NL7107536A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739356A (en) * 1971-06-21 1973-06-12 Ibm Heterojunction information storage unit
SU1005223A1 (ru) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Полупроводниковое запоминающее устройство
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
US4665504A (en) * 1982-11-26 1987-05-12 The British Petroleum Company Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1969C (de) * J. STEZALY in Breslau Eisschlittschuh

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1969C (de) * J. STEZALY in Breslau Eisschlittschuh

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
(REVUE BRITANNIQUE INTERNATIONAL JOURNAL OF ELECTRONICS VOLUME 25,SEPTEMBRE 1968,"THE ELECTRICALCHARACTERISTICS OF NZNSE-PGE HETE *
CHARACTERISTICS OF NZNSE-PGE HETERODIODES"H.J.HOVEL ET AL.PAGES 201-218 DOCUMENT CITE DANS LE *
CONDUCTIVITE SWITCH"T.L.TANSLEY ET AL.PAGE 671 *
GAAS SUBSTRATE"H.FLICKER ET AL.PAGES 2959-2962 *
GE HETERO-JUNCTIONS"H.J.HOVEL PAGES 141-143) *
HETERC-JUNCTIONS"G.O.LADD JR.ET AL.PAGES 609-616 *
METALLURGICAL TRANSACTIONS VOLUME 1,MARS 1970"AUTODOPING EFFECTS AT THE INTERFACE OF GAAS-GE *
REVUE AMERICAINE *
REVUE AMERICAINE APPLIED PHYSICS LETTERS VOLUME 17 15 AOUT 1970,"SWITCHING AND MEMORY IN ZNSE- *
REVUE AMERICAINE JOURNAL OF APPLIED PHYSICS *
REVUE BRITANNIQUE ELECTRONICS LETTERS VOLUME 5,27 *
REVUE BRITANNIQUE INTERNATIONAL JOURNAL OF ELECTRONICS VOLUME 25,SEPTEMBRE 1968,"THE ELECTRICAL *
TEXTE DE LA DEMANDE DE BREVET EXAMINEE *
VOLUME 35,OCTOBRE 1964"OPTICAL AND ELECTRICAL PROPERTIES OF SINGLECRYSTAL GAP VAPORGROWN ON *

Also Published As

Publication number Publication date
NL7107536A (de) 1971-12-21
CH521024A (de) 1972-03-31
FR2095305B1 (de) 1976-03-19
GB1300528A (en) 1972-12-20
DE2129269A1 (de) 1971-12-23
JPS5131066B1 (de) 1976-09-04

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Legal Events

Date Code Title Description
ST Notification of lapse