CH521024A - Bistabile Halbleitervorrichtung mit materialverschiedenem Übergang - Google Patents
Bistabile Halbleitervorrichtung mit materialverschiedenem ÜbergangInfo
- Publication number
- CH521024A CH521024A CH850471A CH850471A CH521024A CH 521024 A CH521024 A CH 521024A CH 850471 A CH850471 A CH 850471A CH 850471 A CH850471 A CH 850471A CH 521024 A CH521024 A CH 521024A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- different transition
- bistable semiconductor
- bistable
- transition
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4694370A | 1970-06-17 | 1970-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH521024A true CH521024A (de) | 1972-03-31 |
Family
ID=21946212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH850471A CH521024A (de) | 1970-06-17 | 1971-06-11 | Bistabile Halbleitervorrichtung mit materialverschiedenem Übergang |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5131066B1 (enrdf_load_stackoverflow) |
| CH (1) | CH521024A (enrdf_load_stackoverflow) |
| DE (1) | DE2129269A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2095305B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1300528A (enrdf_load_stackoverflow) |
| NL (1) | NL7107536A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739356A (en) * | 1971-06-21 | 1973-06-12 | Ibm | Heterojunction information storage unit |
| SU1005223A1 (ru) * | 1980-05-16 | 1983-03-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Полупроводниковое запоминающее устройство |
| JPS5890790A (ja) * | 1981-08-07 | 1983-05-30 | ザ ブリテイッシュ ペトロレアム カンパニ− ピ−．エル．シ− | 半導体装置 |
| US4665504A (en) * | 1982-11-26 | 1987-05-12 | The British Petroleum Company | Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1969C (de) * | J. STEZALY in Breslau | Eisschlittschuh |
-
1971
- 1971-04-29 FR FR7116461*A patent/FR2095305B1/fr not_active Expired
- 1971-05-07 GB GB03624/71A patent/GB1300528A/en not_active Expired
- 1971-05-17 JP JP46032573A patent/JPS5131066B1/ja active Pending
- 1971-06-02 NL NL7107536A patent/NL7107536A/xx unknown
- 1971-06-11 CH CH850471A patent/CH521024A/de not_active IP Right Cessation
- 1971-06-12 DE DE19712129269 patent/DE2129269A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2129269A1 (de) | 1971-12-23 |
| GB1300528A (en) | 1972-12-20 |
| FR2095305B1 (enrdf_load_stackoverflow) | 1976-03-19 |
| NL7107536A (enrdf_load_stackoverflow) | 1971-12-21 |
| FR2095305A1 (enrdf_load_stackoverflow) | 1972-02-11 |
| JPS5131066B1 (enrdf_load_stackoverflow) | 1976-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |