GB1300528A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1300528A GB1300528A GB03624/71A GB1362471A GB1300528A GB 1300528 A GB1300528 A GB 1300528A GB 03624/71 A GB03624/71 A GB 03624/71A GB 1362471 A GB1362471 A GB 1362471A GB 1300528 A GB1300528 A GB 1300528A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- layer
- impedance state
- state
- characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052718 tin Inorganic materials 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- -1 GaP Chemical class 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4694370A | 1970-06-17 | 1970-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1300528A true GB1300528A (en) | 1972-12-20 |
Family
ID=21946212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB03624/71A Expired GB1300528A (en) | 1970-06-17 | 1971-05-07 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5131066B1 (enrdf_load_stackoverflow) |
| CH (1) | CH521024A (enrdf_load_stackoverflow) |
| DE (1) | DE2129269A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2095305B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1300528A (enrdf_load_stackoverflow) |
| NL (1) | NL7107536A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0115124A1 (en) * | 1982-11-26 | 1984-08-08 | The British Petroleum Company p.l.c. | Memory device incorporating an amorphous or microcrystalline alloy |
| US4684972A (en) * | 1981-08-07 | 1987-08-04 | The British Petroleum Company, P.L.C. | Non-volatile amorphous semiconductor memory device utilizing a forming voltage |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739356A (en) * | 1971-06-21 | 1973-06-12 | Ibm | Heterojunction information storage unit |
| SU1005223A1 (ru) * | 1980-05-16 | 1983-03-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Полупроводниковое запоминающее устройство |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1969C (de) * | J. STEZALY in Breslau | Eisschlittschuh |
-
1971
- 1971-04-29 FR FR7116461*A patent/FR2095305B1/fr not_active Expired
- 1971-05-07 GB GB03624/71A patent/GB1300528A/en not_active Expired
- 1971-05-17 JP JP46032573A patent/JPS5131066B1/ja active Pending
- 1971-06-02 NL NL7107536A patent/NL7107536A/xx unknown
- 1971-06-11 CH CH850471A patent/CH521024A/de not_active IP Right Cessation
- 1971-06-12 DE DE19712129269 patent/DE2129269A1/de active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4684972A (en) * | 1981-08-07 | 1987-08-04 | The British Petroleum Company, P.L.C. | Non-volatile amorphous semiconductor memory device utilizing a forming voltage |
| EP0115124A1 (en) * | 1982-11-26 | 1984-08-08 | The British Petroleum Company p.l.c. | Memory device incorporating an amorphous or microcrystalline alloy |
| US4665504A (en) * | 1982-11-26 | 1987-05-12 | The British Petroleum Company | Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2129269A1 (de) | 1971-12-23 |
| FR2095305B1 (enrdf_load_stackoverflow) | 1976-03-19 |
| CH521024A (de) | 1972-03-31 |
| NL7107536A (enrdf_load_stackoverflow) | 1971-12-21 |
| FR2095305A1 (enrdf_load_stackoverflow) | 1972-02-11 |
| JPS5131066B1 (enrdf_load_stackoverflow) | 1976-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |