DE2129167A1 - Verfahren zur Herstellung von SiIi ciumcarbid Whiskern - Google Patents

Verfahren zur Herstellung von SiIi ciumcarbid Whiskern

Info

Publication number
DE2129167A1
DE2129167A1 DE19712129167 DE2129167A DE2129167A1 DE 2129167 A1 DE2129167 A1 DE 2129167A1 DE 19712129167 DE19712129167 DE 19712129167 DE 2129167 A DE2129167 A DE 2129167A DE 2129167 A1 DE2129167 A1 DE 2129167A1
Authority
DE
Germany
Prior art keywords
iron
reaction zone
vapor
silicon
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712129167
Other languages
German (de)
English (en)
Inventor
Thomas John Bishops Stört ford Hertford Lewis (Großbritannien)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
Original Assignee
NAT RES DEV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV filed Critical NAT RES DEV
Publication of DE2129167A1 publication Critical patent/DE2129167A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE19712129167 1970-06-12 1971-06-11 Verfahren zur Herstellung von SiIi ciumcarbid Whiskern Pending DE2129167A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2849270A GB1359145A (en) 1970-06-12 1970-06-12 Manufacture of silicon carbide

Publications (1)

Publication Number Publication Date
DE2129167A1 true DE2129167A1 (de) 1971-12-16

Family

ID=10276495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712129167 Pending DE2129167A1 (de) 1970-06-12 1971-06-11 Verfahren zur Herstellung von SiIi ciumcarbid Whiskern

Country Status (6)

Country Link
US (1) US3773899A (enExample)
CH (1) CH561080A5 (enExample)
DE (1) DE2129167A1 (enExample)
FR (1) FR2096307A5 (enExample)
GB (1) GB1359145A (enExample)
NL (1) NL7108077A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1517063A (en) * 1976-03-02 1978-07-12 Carless Capel & Leonard Ltd Process for removing polonium from hydrocarbons
JPS6170013A (ja) * 1984-09-13 1986-04-10 Nikkiso Co Ltd 微細繊維の製造方法
US4789536A (en) * 1987-01-20 1988-12-06 J. M. Huber Corporation Process for producing silicon carbide whiskers
DE4217677A1 (de) * 1992-05-27 1993-12-02 Schmidt Peter Dr Rer Nat Verfahren zum Herstellen von dünnen, bandförmigen Kristallen mit ebener Oberfläche und nach diesem Verfahren gewonnenes Kristallmaterial
US7083771B2 (en) * 2002-07-10 2006-08-01 Advanced Composite Materials Corporation Process for producing silicon carbide fibers essentially devoid of whiskers
US20040009112A1 (en) * 2002-07-10 2004-01-15 Advanced Composite Materials Corporation Silicon carbide fibers essentially devoid of whiskers and method for preparation thereof
US20070235450A1 (en) * 2006-03-30 2007-10-11 Advanced Composite Materials Corporation Composite materials and devices comprising single crystal silicon carbide heated by electromagnetic radiation

Also Published As

Publication number Publication date
CH561080A5 (enExample) 1975-04-30
US3773899A (en) 1973-11-20
NL7108077A (enExample) 1971-12-14
FR2096307A5 (enExample) 1972-02-11
GB1359145A (en) 1974-07-10

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