DE2120832C3 - Verfahren zum Herstellen eines monolithischen, einen integrierten Schaltkreis bildenden Bauteils mit einem Halbleiterkörper - Google Patents

Verfahren zum Herstellen eines monolithischen, einen integrierten Schaltkreis bildenden Bauteils mit einem Halbleiterkörper

Info

Publication number
DE2120832C3
DE2120832C3 DE2120832A DE2120832A DE2120832C3 DE 2120832 C3 DE2120832 C3 DE 2120832C3 DE 2120832 A DE2120832 A DE 2120832A DE 2120832 A DE2120832 A DE 2120832A DE 2120832 C3 DE2120832 C3 DE 2120832C3
Authority
DE
Germany
Prior art keywords
semiconductor body
field effect
conductivity type
drain regions
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2120832A
Other languages
German (de)
English (en)
Other versions
DE2120832B2 (de
DE2120832A1 (de
Inventor
Murray Arthur Sommerville N.J. Polinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2120832A1 publication Critical patent/DE2120832A1/de
Publication of DE2120832B2 publication Critical patent/DE2120832B2/de
Application granted granted Critical
Publication of DE2120832C3 publication Critical patent/DE2120832C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
DE2120832A 1970-05-04 1971-04-28 Verfahren zum Herstellen eines monolithischen, einen integrierten Schaltkreis bildenden Bauteils mit einem Halbleiterkörper Expired DE2120832C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3413770A 1970-05-04 1970-05-04

Publications (3)

Publication Number Publication Date
DE2120832A1 DE2120832A1 (de) 1971-11-25
DE2120832B2 DE2120832B2 (de) 1978-11-30
DE2120832C3 true DE2120832C3 (de) 1982-06-03

Family

ID=21874544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2120832A Expired DE2120832C3 (de) 1970-05-04 1971-04-28 Verfahren zum Herstellen eines monolithischen, einen integrierten Schaltkreis bildenden Bauteils mit einem Halbleiterkörper

Country Status (7)

Country Link
JP (1) JPS4913909B1 (enExample)
BE (1) BE766651A (enExample)
CA (1) CA921617A (enExample)
DE (1) DE2120832C3 (enExample)
FR (1) FR2088302B1 (enExample)
GB (1) GB1299811A (enExample)
MY (1) MY7400018A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739058B2 (enExample) * 1973-05-07 1982-08-19
IN145547B (enExample) * 1976-01-12 1978-11-04 Rca Corp
JPS5299538U (enExample) * 1976-01-26 1977-07-27
DE3005384C2 (de) * 1979-02-15 1994-10-27 Texas Instruments Inc Verfahren zum Herstellen einer monolithischen integrierten Halbleiterschaltung
JPS6118348U (ja) * 1984-07-04 1986-02-03 シャープ株式会社 石油燃焼器具

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL210216A (enExample) * 1955-12-02
BE562973A (enExample) * 1956-12-06 1900-01-01
US3556879A (en) * 1968-03-20 1971-01-19 Rca Corp Method of treating semiconductor devices

Also Published As

Publication number Publication date
JPS4913909B1 (enExample) 1974-04-03
FR2088302A1 (enExample) 1972-01-07
MY7400018A (en) 1974-12-31
GB1299811A (en) 1972-12-13
DE2120832B2 (de) 1978-11-30
CA921617A (en) 1973-02-20
BE766651A (fr) 1971-10-01
DE2120832A1 (de) 1971-11-25
FR2088302B1 (enExample) 1976-12-03

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)