GB1299811A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
GB1299811A
GB1299811A GB01810/71A GB1181071A GB1299811A GB 1299811 A GB1299811 A GB 1299811A GB 01810/71 A GB01810/71 A GB 01810/71A GB 1181071 A GB1181071 A GB 1181071A GB 1299811 A GB1299811 A GB 1299811A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
atmosphere
semi
drain regions
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB01810/71A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1299811A publication Critical patent/GB1299811A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1299811 Semi-conductor devices RCA CORPORATION 28 April 1871 [4 May 1970] 11810/71 Heading H1K An integrated circuit includes an I.G.F.E.T., the gate insulation of which is formed by heating the device in a wet oxidizing atmosphere containing a hydrogen halide. In the embodiment, two complementary I.G.F.E.T.s 18, 20 are produced with a bipolar transistor 22, the source and drain regions 36, 38 of I.G.F.E.T. 18 being diffused simultaneously with the base region 26 of the transistor, and the source and drain regions 48, 50 of I.G.F.E.T. 20 being formed simultaneously with the emitter 28 and collector contact 30 diffusions. The gate insulations 44, 56 are formed by heating the device to a temperature of 875‹ C. in an atmosphere of water vapour and gaseous hydrogen chloride derived by evaporation of an azeotropic mixture of water and hydrochloric acid. The halide reacts with the dopant impurities in the forming oxide layers, the impurities being derived from the semi-conductor body, to form volatile chlorides thereof. The body is then annealed in a non- oxidizing atmosphere at a temperature of between 900-1200‹ C., but preferably below 1000‹ C. The annealing atmosphere may be hydrogen, helium or forming gas. The elements of the integrated circuit may be isolated within an epitaxial layer 16 by diffused zones 35 of the opposite conductivity type.
GB01810/71A 1970-05-04 1971-04-28 Semiconductor integrated circuit device Expired GB1299811A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3413770A 1970-05-04 1970-05-04

Publications (1)

Publication Number Publication Date
GB1299811A true GB1299811A (en) 1972-12-13

Family

ID=21874544

Family Applications (1)

Application Number Title Priority Date Filing Date
GB01810/71A Expired GB1299811A (en) 1970-05-04 1971-04-28 Semiconductor integrated circuit device

Country Status (7)

Country Link
JP (1) JPS4913909B1 (en)
BE (1) BE766651A (en)
CA (1) CA921617A (en)
DE (1) DE2120832C3 (en)
FR (1) FR2088302B1 (en)
GB (1) GB1299811A (en)
MY (1) MY7400018A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501665A (en) * 1973-05-07 1975-01-09

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN145547B (en) * 1976-01-12 1978-11-04 Rca Corp
JPS5299538U (en) * 1976-01-26 1977-07-27
DE3005384C2 (en) * 1979-02-15 1994-10-27 Texas Instruments Inc Method of manufacturing a monolithic semiconductor integrated circuit
JPS6118348U (en) * 1984-07-04 1986-02-03 シャープ株式会社 oil burning appliances

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL109817C (en) * 1955-12-02
BE562973A (en) * 1956-12-06 1900-01-01
US3556879A (en) * 1968-03-20 1971-01-19 Rca Corp Method of treating semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501665A (en) * 1973-05-07 1975-01-09
JPS5739058B2 (en) * 1973-05-07 1982-08-19

Also Published As

Publication number Publication date
DE2120832B2 (en) 1978-11-30
DE2120832A1 (en) 1971-11-25
BE766651A (en) 1971-10-01
FR2088302B1 (en) 1976-12-03
FR2088302A1 (en) 1972-01-07
MY7400018A (en) 1974-12-31
CA921617A (en) 1973-02-20
DE2120832C3 (en) 1982-06-03
JPS4913909B1 (en) 1974-04-03

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years