IN145547B - - Google Patents

Info

Publication number
IN145547B
IN145547B IN2053/CAL/76A IN2053CA1976A IN145547B IN 145547 B IN145547 B IN 145547B IN 2053CA1976 A IN2053CA1976 A IN 2053CA1976A IN 145547 B IN145547 B IN 145547B
Authority
IN
India
Application number
IN2053/CAL/76A
Inventor
J Fabula
S Cohen
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IN145547B publication Critical patent/IN145547B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
IN2053/CAL/76A 1976-01-12 1976-11-16 IN145547B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64845576A 1976-01-12 1976-01-12

Publications (1)

Publication Number Publication Date
IN145547B true IN145547B (en) 1978-11-04

Family

ID=24600841

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2053/CAL/76A IN145547B (en) 1976-01-12 1976-11-16

Country Status (9)

Country Link
JP (1) JPS5286070A (en)
AU (1) AU502350B2 (en)
DE (1) DE2700094A1 (en)
FR (1) FR2337941A1 (en)
GB (1) GB1513640A (en)
IN (1) IN145547B (en)
IT (1) IT1064328B (en)
SE (1) SE7614145L (en)
YU (1) YU301876A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188162A (en) * 1982-04-28 1983-11-02 Agency Of Ind Science & Technol Formation of gate insulation film
DE3425531A1 (en) * 1984-07-11 1986-01-16 Siemens AG, 1000 Berlin und 8000 München Process for making doped SiO2 layers fuse in fabricating integrated MOS semiconductor circuits
JPS61193456A (en) * 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element
NL8603111A (en) * 1986-12-08 1988-07-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING A SILICONE SURFACE ON ITS SURFACE WITH FIELD OXIDE AREAS.
JP3310386B2 (en) * 1993-05-25 2002-08-05 忠弘 大見 Method of forming insulating oxide film and semiconductor device
EP1014432A1 (en) * 1998-12-23 2000-06-28 Infineon Technologies North America Corp. Method for forming the gate oxide of metal-oxide-semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2014382B1 (en) * 1968-06-28 1974-03-15 Motorola Inc
JPS4913909B1 (en) * 1970-05-04 1974-04-03

Also Published As

Publication number Publication date
AU2108877A (en) 1978-07-13
JPS5615573B2 (en) 1981-04-10
IT1064328B (en) 1985-02-18
FR2337941A1 (en) 1977-08-05
FR2337941B1 (en) 1982-05-28
DE2700094A1 (en) 1977-07-21
YU301876A (en) 1982-06-30
GB1513640A (en) 1978-06-07
AU502350B2 (en) 1979-07-19
JPS5286070A (en) 1977-07-16
SE7614145L (en) 1977-07-13

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