FR2088302B1 - - Google Patents
Info
- Publication number
- FR2088302B1 FR2088302B1 FR7115623A FR7115623A FR2088302B1 FR 2088302 B1 FR2088302 B1 FR 2088302B1 FR 7115623 A FR7115623 A FR 7115623A FR 7115623 A FR7115623 A FR 7115623A FR 2088302 B1 FR2088302 B1 FR 2088302B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/6306—
-
- H10P14/6322—
-
- H10P14/6529—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3413770A | 1970-05-04 | 1970-05-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2088302A1 FR2088302A1 (enExample) | 1972-01-07 |
| FR2088302B1 true FR2088302B1 (enExample) | 1976-12-03 |
Family
ID=21874544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7115623A Expired FR2088302B1 (enExample) | 1970-05-04 | 1971-04-30 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4913909B1 (enExample) |
| BE (1) | BE766651A (enExample) |
| CA (1) | CA921617A (enExample) |
| DE (1) | DE2120832C3 (enExample) |
| FR (1) | FR2088302B1 (enExample) |
| GB (1) | GB1299811A (enExample) |
| MY (1) | MY7400018A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739058B2 (enExample) * | 1973-05-07 | 1982-08-19 | ||
| IN145547B (enExample) * | 1976-01-12 | 1978-11-04 | Rca Corp | |
| JPS5299538U (enExample) * | 1976-01-26 | 1977-07-27 | ||
| DE3005384C2 (de) * | 1979-02-15 | 1994-10-27 | Texas Instruments Inc | Verfahren zum Herstellen einer monolithischen integrierten Halbleiterschaltung |
| JPS6118348U (ja) * | 1984-07-04 | 1986-02-03 | シャープ株式会社 | 石油燃焼器具 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL210216A (enExample) * | 1955-12-02 | |||
| BE562973A (enExample) * | 1956-12-06 | 1900-01-01 | ||
| US3556879A (en) * | 1968-03-20 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices |
-
1970
- 1970-12-26 JP JP45125074A patent/JPS4913909B1/ja active Pending
-
1971
- 1971-03-30 CA CA109180A patent/CA921617A/en not_active Expired
- 1971-04-28 GB GB01810/71A patent/GB1299811A/en not_active Expired
- 1971-04-28 DE DE2120832A patent/DE2120832C3/de not_active Expired
- 1971-04-30 FR FR7115623A patent/FR2088302B1/fr not_active Expired
- 1971-05-03 BE BE766651A patent/BE766651A/xx unknown
-
1974
- 1974-12-30 MY MY18/74A patent/MY7400018A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE766651A (fr) | 1971-10-01 |
| DE2120832A1 (de) | 1971-11-25 |
| JPS4913909B1 (enExample) | 1974-04-03 |
| CA921617A (en) | 1973-02-20 |
| MY7400018A (en) | 1974-12-31 |
| FR2088302A1 (enExample) | 1972-01-07 |
| GB1299811A (en) | 1972-12-13 |
| DE2120832C3 (de) | 1982-06-03 |
| DE2120832B2 (de) | 1978-11-30 |