DE2112115A1 - Verfahren zur Ionenimplantation in Halbleitern - Google Patents

Verfahren zur Ionenimplantation in Halbleitern

Info

Publication number
DE2112115A1
DE2112115A1 DE19712112115 DE2112115A DE2112115A1 DE 2112115 A1 DE2112115 A1 DE 2112115A1 DE 19712112115 DE19712112115 DE 19712112115 DE 2112115 A DE2112115 A DE 2112115A DE 2112115 A1 DE2112115 A1 DE 2112115A1
Authority
DE
Germany
Prior art keywords
semiconductor
silicon
implanted
interface
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712112115
Other languages
German (de)
English (en)
Inventor
Rae Urquhart Mac
Lepselter Martin Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2112115A1 publication Critical patent/DE2112115A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
DE19712112115 1970-03-17 1971-03-13 Verfahren zur Ionenimplantation in Halbleitern Pending DE2112115A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2030770A 1970-03-17 1970-03-17

Publications (1)

Publication Number Publication Date
DE2112115A1 true DE2112115A1 (de) 1971-10-07

Family

ID=21797881

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712112115 Pending DE2112115A1 (de) 1970-03-17 1971-03-13 Verfahren zur Ionenimplantation in Halbleitern

Country Status (4)

Country Link
BE (1) BE764260A (enExample)
DE (1) DE2112115A1 (enExample)
FR (1) FR2083348A1 (enExample)
NL (1) NL7103343A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors

Also Published As

Publication number Publication date
FR2083348B1 (enExample) 1973-10-19
BE764260A (fr) 1971-08-02
NL7103343A (enExample) 1971-09-21
FR2083348A1 (en) 1971-12-17

Similar Documents

Publication Publication Date Title
DE3485880T2 (de) Verfahren zur herstellung von halbleiteranordnungen.
DE2718894C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1200439B (de) Verfahren zum Herstellen eines elektrischen Kontaktes an einem oxydueberzogenen Halbleiterplaettchen
DE3135993A1 (de) "verfahren zur herstellung von kontakten mit geringem widerstand in halbleitervorrichtungen"
DE1282196B (de) Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge
DE2923737A1 (de) Passivierung eines integrierten schaltkreises
DE3215101C2 (de) Verfahren zum Herstellen einer Öffnung mit abgeschrägten Kanten in einer Passivierschicht
DE2425382A1 (de) Verfahren zur herstellung von isolierschicht-feldeffekttransistoren
DE2726003A1 (de) Verfahren zur herstellung von mis- bauelementen mit versetztem gate
EP0038994A2 (de) Kontakt für MIS-Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1489240B1 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2615438A1 (de) Verfahren zur herstellung von schaltungskomponenten integrierter schaltungen in einem siliziumsubstrat
DE3217026A1 (de) Halbleitervorrichtung
DE2132034A1 (de) Verfahren zur Herstellung von Zwischenverbindungen fuer elektrische Baueinheiten auf Festkoerpern
DE2458734A1 (de) Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltung
DE2405935A1 (de) Verfahren zur diffusion von fremdatomen in einen halbleiter
DE2031831A1 (de) Halbleiterdiode und Verfahren zu ihrer Herstellung
DE3000121A1 (de) Verfahren zur herstellung einer mos-halbleitereinrichtung mit selbstjustierten anschluessen
DE3007500A1 (de) Verfahren zum passivieren eines integrierten schaltkreises
DE1170082B (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2112115A1 (de) Verfahren zur Ionenimplantation in Halbleitern
DE3147535A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE2112114A1 (de) Hochfrequenztransistor mit flachem Emitter
DE1929084A1 (de) Verfahren zum Herstellen eines Halbleiter-Bauelementes
DE1464921A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung