FR2083348A1 - Doping a silicon substrate by ion bombard-ment - Google Patents

Doping a silicon substrate by ion bombard-ment

Info

Publication number
FR2083348A1
FR2083348A1 FR7109218A FR7109218A FR2083348A1 FR 2083348 A1 FR2083348 A1 FR 2083348A1 FR 7109218 A FR7109218 A FR 7109218A FR 7109218 A FR7109218 A FR 7109218A FR 2083348 A1 FR2083348 A1 FR 2083348A1
Authority
FR
France
Prior art keywords
doping
ment
silicon substrate
ion
ion bombard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7109218A
Other languages
French (fr)
Other versions
FR2083348B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2083348A1 publication Critical patent/FR2083348A1/en
Application granted granted Critical
Publication of FR2083348B1 publication Critical patent/FR2083348B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Method of doping a semiconductor to form a pn junction, by ion implantation without the passivation of the junction on the surface of the semiconductor. After the impurity ion has been implanted to the desired amount, further bombardment for driving back the dopant ion into the body, is carried out using ions of light-weight inert gases.
FR7109218A 1970-03-17 1971-03-16 Doping a silicon substrate by ion bombard-ment Granted FR2083348A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2030770A 1970-03-17 1970-03-17

Publications (2)

Publication Number Publication Date
FR2083348A1 true FR2083348A1 (en) 1971-12-17
FR2083348B1 FR2083348B1 (en) 1973-10-19

Family

ID=21797881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7109218A Granted FR2083348A1 (en) 1970-03-17 1971-03-16 Doping a silicon substrate by ion bombard-ment

Country Status (4)

Country Link
BE (1) BE764260A (en)
DE (1) DE2112115A1 (en)
FR (1) FR2083348A1 (en)
NL (1) NL7103343A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6702807A (en) * 1966-02-24 1967-08-25
DE1806643A1 (en) * 1967-11-29 1969-06-19 Hughes Aircraft Co Method for manufacturing a semiconductor device
NL6912876A (en) * 1968-08-22 1970-02-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6702807A (en) * 1966-02-24 1967-08-25
DE1806643A1 (en) * 1967-11-29 1969-06-19 Hughes Aircraft Co Method for manufacturing a semiconductor device
NL6912876A (en) * 1968-08-22 1970-02-24

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"APPLIED PHYSICS LETTERS"VOLUME 15,15 OCTOBRE 1969,"RADIATION ENHANCED DIFFUSION OF BORON IN SILICON"DANIEL G.NELSON ET A.PAGES 246-248) *
DIFFUSION OF BORON IN SILICON"DANIEL G.NELSON ET A.PAGES 246-248) *
REVUE AMERICAINE"APPLIED PHYSICS LETTERS"VOLUME 15,15 OCTOBRE 1969,"RADIATION ENHANCED *

Also Published As

Publication number Publication date
DE2112115A1 (en) 1971-10-07
BE764260A (en) 1971-08-02
NL7103343A (en) 1971-09-21
FR2083348B1 (en) 1973-10-19

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Legal Events

Date Code Title Description
ST Notification of lapse