FR2083348A1 - Doping a silicon substrate by ion bombard-ment - Google Patents

Doping a silicon substrate by ion bombard-ment

Info

Publication number
FR2083348A1
FR2083348A1 FR7109218A FR7109218A FR2083348A1 FR 2083348 A1 FR2083348 A1 FR 2083348A1 FR 7109218 A FR7109218 A FR 7109218A FR 7109218 A FR7109218 A FR 7109218A FR 2083348 A1 FR2083348 A1 FR 2083348A1
Authority
FR
France
Prior art keywords
doping
ment
silicon substrate
ion
ion bombard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7109218A
Other languages
English (en)
French (fr)
Other versions
FR2083348B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2083348A1 publication Critical patent/FR2083348A1/fr
Application granted granted Critical
Publication of FR2083348B1 publication Critical patent/FR2083348B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7109218A 1970-03-17 1971-03-16 Doping a silicon substrate by ion bombard-ment Granted FR2083348A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2030770A 1970-03-17 1970-03-17

Publications (2)

Publication Number Publication Date
FR2083348A1 true FR2083348A1 (en) 1971-12-17
FR2083348B1 FR2083348B1 (enExample) 1973-10-19

Family

ID=21797881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7109218A Granted FR2083348A1 (en) 1970-03-17 1971-03-16 Doping a silicon substrate by ion bombard-ment

Country Status (4)

Country Link
BE (1) BE764260A (enExample)
DE (1) DE2112115A1 (enExample)
FR (1) FR2083348A1 (enExample)
NL (1) NL7103343A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6702807A (enExample) * 1966-02-24 1967-08-25
DE1806643A1 (de) * 1967-11-29 1969-06-19 Hughes Aircraft Co Verfahren zur Herstellung einer Halbleiteranordnung
NL6912876A (enExample) * 1968-08-22 1970-02-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6702807A (enExample) * 1966-02-24 1967-08-25
DE1806643A1 (de) * 1967-11-29 1969-06-19 Hughes Aircraft Co Verfahren zur Herstellung einer Halbleiteranordnung
NL6912876A (enExample) * 1968-08-22 1970-02-24

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"APPLIED PHYSICS LETTERS"VOLUME 15,15 OCTOBRE 1969,"RADIATION ENHANCED DIFFUSION OF BORON IN SILICON"DANIEL G.NELSON ET A.PAGES 246-248) *
DIFFUSION OF BORON IN SILICON"DANIEL G.NELSON ET A.PAGES 246-248) *
REVUE AMERICAINE"APPLIED PHYSICS LETTERS"VOLUME 15,15 OCTOBRE 1969,"RADIATION ENHANCED *

Also Published As

Publication number Publication date
DE2112115A1 (de) 1971-10-07
FR2083348B1 (enExample) 1973-10-19
BE764260A (fr) 1971-08-02
NL7103343A (enExample) 1971-09-21

Similar Documents

Publication Publication Date Title
GB1435590A (en) Process for the fabrication of a semiconductor structure
GB1269359A (en) Improvements in or relating to semiconductors and methods of doping semiconductors
GB1423085A (en) Thin low temperature epi regions by conversion of an amorphous layer
GB1451096A (en) Semiconductor devices
GB1283133A (en) Method of manufacturing semiconductor devices
JPS55151349A (en) Forming method of insulation isolating region
GB1522291A (en) Semiconductor device manufacture
GB1332932A (en) Methods of manufacturing a semiconductor device
GB1199399A (en) Improvements in or relating to the Manufacture of Semiconductors.
FR2083348A1 (en) Doping a silicon substrate by ion bombard-ment
GB1524709A (en) Method of manufacturing a semiconductor structure for microwave operation including a thin insulating or weakly doped layer
JPS5412565A (en) Production of semiconductor device
GB1413261A (en) Doping of insulating layers
JPS5312289A (en) Production of semiconductor device
JPS5247377A (en) Method of inactivating surface of group iii-v compound semiconductor
JPS6472523A (en) Manufacture of semiconductor device
JPS55145373A (en) Fabricating method of semiconductor device
JPS57134967A (en) Manufacture of semiconductor device
FR2189876A1 (en) Radiation resistant silicon wafers - and solar cells made therefrom for use in space
FR2236271A1 (en) Method of semiconductor junction fabrication - uses localised laser irradiation followed by reheating
JPS5217768A (en) Production method of semi-conductor device
JPS5210081A (en) Method for manufacturing semiconductor device
JPS5615077A (en) Manufacture of semiconductor device
JPS5311574A (en) Production of semiconductor device
CROWDER Investigation of ion implantation as a doping technique for the 3-5 semiconductors and ternary alloy systems[Final Report]

Legal Events

Date Code Title Description
ST Notification of lapse