NL6702807A - - Google Patents

Info

Publication number
NL6702807A
NL6702807A NL6702807A NL6702807A NL6702807A NL 6702807 A NL6702807 A NL 6702807A NL 6702807 A NL6702807 A NL 6702807A NL 6702807 A NL6702807 A NL 6702807A NL 6702807 A NL6702807 A NL 6702807A
Authority
NL
Netherlands
Application number
NL6702807A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6702807A publication Critical patent/NL6702807A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D64/01336—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/6529—
    • H10P14/662—
    • H10P14/69215—
    • H10P14/6923—
    • H10P50/20—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
NL6702807A 1966-02-24 1967-02-23 NL6702807A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52982566A 1966-02-24 1966-02-24

Publications (1)

Publication Number Publication Date
NL6702807A true NL6702807A (enExample) 1967-08-25

Family

ID=24111395

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6702807A NL6702807A (enExample) 1966-02-24 1967-02-23

Country Status (8)

Country Link
US (1) US3461361A (enExample)
JP (1) JPS5133716B1 (enExample)
DE (1) DE1614356B2 (enExample)
ES (2) ES336361A1 (enExample)
FR (1) FR1511986A (enExample)
GB (1) GB1177381A (enExample)
NL (1) NL6702807A (enExample)
SE (1) SE352986B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083348A1 (en) * 1970-03-17 1971-12-17 Western Electric Co Doping a silicon substrate by ion bombard-ment

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641405A (en) * 1967-10-13 1972-02-08 Gen Electric Field-effect transistors with superior passivating films and method of making same
US3585463A (en) * 1968-11-25 1971-06-15 Gen Telephone & Elect Complementary enhancement-type mos transistors
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
BE756139A (fr) * 1969-09-15 1971-02-15 Rca Corp Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
DE2058059A1 (de) * 1969-11-26 1971-06-09 Hitachi Ltd Schaltungsvorrichtung mit einem verdichteten UEberzugsfilm auf einer Unterlage und Verfahren zu ihrer Herstellung
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
US3912559A (en) * 1971-11-25 1975-10-14 Suwa Seikosha Kk Complementary MIS-type semiconductor devices and methods for manufacturing same
US3766637A (en) * 1972-05-04 1973-10-23 Rca Corp Method of making mos transistors
US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US3860454A (en) * 1973-06-27 1975-01-14 Ibm Field effect transistor structure for minimizing parasitic inversion and process for fabricating
JPS5410228B2 (enExample) * 1973-08-20 1979-05-02
US3912545A (en) * 1974-05-13 1975-10-14 Motorola Inc Process and product for making a single supply N-channel silicon gate device
IT1044690B (it) * 1974-11-11 1980-04-21 Siemens Ag Dispositivo con due transistori a effetto di campo complementari
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4152823A (en) * 1975-06-10 1979-05-08 Micro Power Systems High temperature refractory metal contact assembly and multiple layer interconnect structure
US4002501A (en) * 1975-06-16 1977-01-11 Rockwell International Corporation High speed, high yield CMOS/SOS process
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5671397A (en) * 1993-12-27 1997-09-23 At&T Global Information Solutions Company Sea-of-cells array of transistors
US6675361B1 (en) 1993-12-27 2004-01-06 Hyundai Electronics America Method of constructing an integrated circuit comprising an embedded macro
US6448615B1 (en) * 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
US6097065A (en) 1998-03-30 2000-08-01 Micron Technology, Inc. Circuits and methods for dual-gated transistors
JP4265882B2 (ja) * 2001-12-13 2009-05-20 忠弘 大見 相補型ｍｉｓ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL88584C (enExample) * 1950-01-31
US3151004A (en) * 1961-03-30 1964-09-29 Rca Corp Semiconductor devices
NL302630A (enExample) * 1963-01-18 1900-01-01
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3323947A (en) * 1964-12-17 1967-06-06 Bell Telephone Labor Inc Method for making electrode connections to potassium tantalate-niobate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083348A1 (en) * 1970-03-17 1971-12-17 Western Electric Co Doping a silicon substrate by ion bombard-ment

Also Published As

Publication number Publication date
FR1511986A (fr) 1968-02-02
DE1614356A1 (de) 1972-03-02
ES348302A1 (es) 1969-03-01
JPS5133716B1 (enExample) 1976-09-21
DE1614356B2 (de) 1974-07-25
ES336361A1 (es) 1968-04-01
SE352986B (enExample) 1973-01-15
US3461361A (en) 1969-08-12
GB1177381A (en) 1970-01-14

Similar Documents

Publication Publication Date Title
JPS5133716B1 (enExample)
AT281852B (enExample)
AU5917865A (enExample)
AU612166A (enExample)
AU6597365A (enExample)
AU6703465A (enExample)
AU5895065A (enExample)
AU1111066A (enExample)
BE674882A (enExample)
BE673316A (enExample)
BE692728A (enExample)
BE692353A (enExample)
BE692318A (enExample)
BE692025A (enExample)
BE690818A (enExample)
AU1027866A (enExample)
BE688399A (enExample)
BE687686A (enExample)
BE677549A (enExample)
BE675173A (enExample)
BE675139A (enExample)
BE675084A (enExample)
BE674987A (enExample)
BE626310A (enExample)
BE674792A (enExample)