DE1614356B2 - Verfahren zur Herstellung einer integrierten Halbleiterbaugruppe mit komplementären Feldeffekttransistoren und Material zur Durchführung des Verfahrens - Google Patents

Verfahren zur Herstellung einer integrierten Halbleiterbaugruppe mit komplementären Feldeffekttransistoren und Material zur Durchführung des Verfahrens

Info

Publication number
DE1614356B2
DE1614356B2 DE1614356A DER0045192A DE1614356B2 DE 1614356 B2 DE1614356 B2 DE 1614356B2 DE 1614356 A DE1614356 A DE 1614356A DE R0045192 A DER0045192 A DE R0045192A DE 1614356 B2 DE1614356 B2 DE 1614356B2
Authority
DE
Germany
Prior art keywords
layer
transistor
oxide layer
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1614356A
Other languages
German (de)
English (en)
Other versions
DE1614356A1 (de
Inventor
Peter Finderne N.J. Delivorias (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1614356A1 publication Critical patent/DE1614356A1/de
Publication of DE1614356B2 publication Critical patent/DE1614356B2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D64/01336—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/6529—
    • H10P14/662—
    • H10P14/69215—
    • H10P14/6923—
    • H10P50/20—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE1614356A 1966-02-24 1967-02-03 Verfahren zur Herstellung einer integrierten Halbleiterbaugruppe mit komplementären Feldeffekttransistoren und Material zur Durchführung des Verfahrens Granted DE1614356B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52982566A 1966-02-24 1966-02-24

Publications (2)

Publication Number Publication Date
DE1614356A1 DE1614356A1 (de) 1972-03-02
DE1614356B2 true DE1614356B2 (de) 1974-07-25

Family

ID=24111395

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1614356A Granted DE1614356B2 (de) 1966-02-24 1967-02-03 Verfahren zur Herstellung einer integrierten Halbleiterbaugruppe mit komplementären Feldeffekttransistoren und Material zur Durchführung des Verfahrens

Country Status (8)

Country Link
US (1) US3461361A (enExample)
JP (1) JPS5133716B1 (enExample)
DE (1) DE1614356B2 (enExample)
ES (2) ES336361A1 (enExample)
FR (1) FR1511986A (enExample)
GB (1) GB1177381A (enExample)
NL (1) NL6702807A (enExample)
SE (1) SE352986B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641405A (en) * 1967-10-13 1972-02-08 Gen Electric Field-effect transistors with superior passivating films and method of making same
US3585463A (en) * 1968-11-25 1971-06-15 Gen Telephone & Elect Complementary enhancement-type mos transistors
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
BE756139A (fr) * 1969-09-15 1971-02-15 Rca Corp Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
DE2058059A1 (de) * 1969-11-26 1971-06-09 Hitachi Ltd Schaltungsvorrichtung mit einem verdichteten UEberzugsfilm auf einer Unterlage und Verfahren zu ihrer Herstellung
NL7103343A (enExample) * 1970-03-17 1971-09-21
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
US3912559A (en) * 1971-11-25 1975-10-14 Suwa Seikosha Kk Complementary MIS-type semiconductor devices and methods for manufacturing same
US3766637A (en) * 1972-05-04 1973-10-23 Rca Corp Method of making mos transistors
US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US3860454A (en) * 1973-06-27 1975-01-14 Ibm Field effect transistor structure for minimizing parasitic inversion and process for fabricating
JPS5410228B2 (enExample) * 1973-08-20 1979-05-02
US3912545A (en) * 1974-05-13 1975-10-14 Motorola Inc Process and product for making a single supply N-channel silicon gate device
IT1044690B (it) * 1974-11-11 1980-04-21 Siemens Ag Dispositivo con due transistori a effetto di campo complementari
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4152823A (en) * 1975-06-10 1979-05-08 Micro Power Systems High temperature refractory metal contact assembly and multiple layer interconnect structure
US4002501A (en) * 1975-06-16 1977-01-11 Rockwell International Corporation High speed, high yield CMOS/SOS process
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5671397A (en) * 1993-12-27 1997-09-23 At&T Global Information Solutions Company Sea-of-cells array of transistors
US6675361B1 (en) 1993-12-27 2004-01-06 Hyundai Electronics America Method of constructing an integrated circuit comprising an embedded macro
US6448615B1 (en) * 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
US6097065A (en) 1998-03-30 2000-08-01 Micron Technology, Inc. Circuits and methods for dual-gated transistors
JP4265882B2 (ja) * 2001-12-13 2009-05-20 忠弘 大見 相補型ｍｉｓ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL88584C (enExample) * 1950-01-31
US3151004A (en) * 1961-03-30 1964-09-29 Rca Corp Semiconductor devices
NL302630A (enExample) * 1963-01-18 1900-01-01
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3323947A (en) * 1964-12-17 1967-06-06 Bell Telephone Labor Inc Method for making electrode connections to potassium tantalate-niobate

Also Published As

Publication number Publication date
FR1511986A (fr) 1968-02-02
DE1614356A1 (de) 1972-03-02
ES348302A1 (es) 1969-03-01
JPS5133716B1 (enExample) 1976-09-21
NL6702807A (enExample) 1967-08-25
ES336361A1 (es) 1968-04-01
SE352986B (enExample) 1973-01-15
US3461361A (en) 1969-08-12
GB1177381A (en) 1970-01-14

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee