DE2109315C3 - Halbleiter-Speichereinrichtung - Google Patents

Halbleiter-Speichereinrichtung

Info

Publication number
DE2109315C3
DE2109315C3 DE2109315A DE2109315A DE2109315C3 DE 2109315 C3 DE2109315 C3 DE 2109315C3 DE 2109315 A DE2109315 A DE 2109315A DE 2109315 A DE2109315 A DE 2109315A DE 2109315 C3 DE2109315 C3 DE 2109315C3
Authority
DE
Germany
Prior art keywords
transistor
base
collector
information
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2109315A
Other languages
German (de)
English (en)
Other versions
DE2109315B2 (de
DE2109315A1 (de
Inventor
Takashi Kokubunji Tokio Asaoka
Nobuaki Tokorozawa Saitama Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE2109315A1 publication Critical patent/DE2109315A1/de
Publication of DE2109315B2 publication Critical patent/DE2109315B2/de
Application granted granted Critical
Publication of DE2109315C3 publication Critical patent/DE2109315C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE2109315A 1970-02-27 1971-02-26 Halbleiter-Speichereinrichtung Expired DE2109315C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45016458A JPS5149177B1 (cg-RX-API-DMAC7.html) 1970-02-27 1970-02-27

Publications (3)

Publication Number Publication Date
DE2109315A1 DE2109315A1 (de) 1971-09-09
DE2109315B2 DE2109315B2 (de) 1974-01-03
DE2109315C3 true DE2109315C3 (de) 1974-08-08

Family

ID=11916790

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2109315A Expired DE2109315C3 (de) 1970-02-27 1971-02-26 Halbleiter-Speichereinrichtung

Country Status (5)

Country Link
US (1) US3768081A (cg-RX-API-DMAC7.html)
JP (1) JPS5149177B1 (cg-RX-API-DMAC7.html)
DE (1) DE2109315C3 (cg-RX-API-DMAC7.html)
FR (1) FR2080811B1 (cg-RX-API-DMAC7.html)
GB (1) GB1344384A (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit
FR2364528A1 (fr) * 1976-09-10 1978-04-07 Thomson Csf Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules
US4142112A (en) * 1977-05-06 1979-02-27 Sperry Rand Corporation Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070779A (en) * 1955-09-26 1962-12-25 Ibm Apparatus utilizing minority carrier storage for signal storage, pulse reshaping, logic gating, pulse amplifying and pulse delaying
US2920215A (en) * 1956-10-31 1960-01-05 Rca Corp Switching circuit
US3510850A (en) * 1968-04-30 1970-05-05 Gen Electric Drive circuitry for negative resistance device matrix

Also Published As

Publication number Publication date
FR2080811B1 (cg-RX-API-DMAC7.html) 1975-07-04
FR2080811A1 (cg-RX-API-DMAC7.html) 1971-11-19
US3768081A (en) 1973-10-23
JPS5149177B1 (cg-RX-API-DMAC7.html) 1976-12-24
DE2109315B2 (de) 1974-01-03
GB1344384A (en) 1974-01-23
DE2109315A1 (de) 1971-09-09

Similar Documents

Publication Publication Date Title
DE2101431C3 (cg-RX-API-DMAC7.html)
DE1817510C3 (de) Monolithischer Halbleiterspeicher mit Speicherzellen aus Transistoren
DE3037315C2 (cg-RX-API-DMAC7.html)
DE2313917B2 (de) Speicher mit redundanten Speicherstellen
DE2621136C2 (de) Vorprogrammierter Halbleiterspeicher
US3729719A (en) Stored charge storage cell using a non latching scr type device
DE2925925C2 (de) Informationsspeicher
DE69022475T2 (de) Halbleiterspeichereinrichtung mit hoher Datenlesegeschwindigkeit.
DE69032303T2 (de) Halbleiter-Speichereinrichtung
DE1910777A1 (de) Impulsgespeister monolithischer Datenspeicher
DE1279747B (de) Speicherzelle
DE4212841C2 (de) Halbleiterspeichervorrichtung zum Durchführen einer Refresh-Operation beim Lesen oder Schreiben
EP0013302B1 (de) Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers
DE2109315C3 (de) Halbleiter-Speichereinrichtung
DE2633879A1 (de) Halbleiterspeicherzelle
DE2116107A1 (de) Speicherzelle
EP0023538B1 (de) Halbleiterspeicherzelle in MTL-Technik
DE69024000T2 (de) Halbleiterspeicheranordnung.
DE4006432C2 (cg-RX-API-DMAC7.html)
US4298961A (en) Bipolar memory circuit
DE3787046T2 (de) RAM-Speicher mit Komplementärtransistor-Schalterspeicherzellen.
DE3853182T2 (de) Speicherzelle mit gesättigtem schnellem Schreiben.
DE3786496T2 (de) Speicherzelle mit variabler Klemmschaltung.
DE2612666A1 (de) Hochintegrierte, invertierende logische schaltung
DE1774928A1 (de) Matrixspeicher

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8327 Change in the person/name/address of the patent owner

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO,

8328 Change in the person/name/address of the agent

Free format text: SCHWABE, H., DIPL.-ING. SANDMAIR, K., DIPL.-CHEM. DR.JUR. DR.RER.NAT. MARX, L., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN