DE2102421C3 - Verfahren zur Herstellung einer strukturierten metallischen Schicht auf einem keramischen Grundkörper - Google Patents
Verfahren zur Herstellung einer strukturierten metallischen Schicht auf einem keramischen GrundkörperInfo
- Publication number
- DE2102421C3 DE2102421C3 DE2102421A DE2102421A DE2102421C3 DE 2102421 C3 DE2102421 C3 DE 2102421C3 DE 2102421 A DE2102421 A DE 2102421A DE 2102421 A DE2102421 A DE 2102421A DE 2102421 C3 DE2102421 C3 DE 2102421C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- metallic layer
- base body
- metallic
- ceramic base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Ceramic Products (AREA)
- Chemically Coating (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2102421A DE2102421C3 (de) | 1971-01-19 | 1971-01-19 | Verfahren zur Herstellung einer strukturierten metallischen Schicht auf einem keramischen Grundkörper |
| CH1291471A CH576003A5 (OSRAM) | 1971-01-19 | 1971-09-03 | |
| AT852171A AT317337B (de) | 1971-01-19 | 1971-10-01 | Verfahren zur Herstellung von mindestens einer strukturierten metallischen Schicht auf einem Grundkörper |
| GB5150371A GB1327670A (en) | 1971-01-19 | 1971-11-05 | Production of metallising layers on substrate bodies |
| US00213427A US3829316A (en) | 1971-01-19 | 1971-12-29 | Method for the preparation of metallic layers on a substrate |
| IT19320/72A IT946536B (it) | 1971-01-19 | 1972-01-13 | Procedimento per formare strati metallici su un substrato |
| FR7201383A FR2122450B1 (OSRAM) | 1971-01-19 | 1972-01-17 | |
| CA132,663A CA985606A (en) | 1971-01-19 | 1972-01-18 | Process for the production of a metallic layer having a predetermined structure on a substrate body |
| NL7200742A NL7200742A (OSRAM) | 1971-01-19 | 1972-01-19 | |
| JP754272A JPS5535468B1 (OSRAM) | 1971-01-19 | 1972-01-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2102421A DE2102421C3 (de) | 1971-01-19 | 1971-01-19 | Verfahren zur Herstellung einer strukturierten metallischen Schicht auf einem keramischen Grundkörper |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2102421A1 DE2102421A1 (de) | 1973-06-14 |
| DE2102421B2 DE2102421B2 (de) | 1979-01-11 |
| DE2102421C3 true DE2102421C3 (de) | 1979-09-06 |
Family
ID=5796328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2102421A Expired DE2102421C3 (de) | 1971-01-19 | 1971-01-19 | Verfahren zur Herstellung einer strukturierten metallischen Schicht auf einem keramischen Grundkörper |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3829316A (OSRAM) |
| JP (1) | JPS5535468B1 (OSRAM) |
| AT (1) | AT317337B (OSRAM) |
| CA (1) | CA985606A (OSRAM) |
| CH (1) | CH576003A5 (OSRAM) |
| DE (1) | DE2102421C3 (OSRAM) |
| FR (1) | FR2122450B1 (OSRAM) |
| GB (1) | GB1327670A (OSRAM) |
| IT (1) | IT946536B (OSRAM) |
| NL (1) | NL7200742A (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5293963A (en) * | 1976-02-03 | 1977-08-08 | Nippon Electric Co | Method of producing thick film wiring circuit substrate |
| US4376815A (en) * | 1979-10-22 | 1983-03-15 | Oddi Michael J | Method of applying photoresist by screening in the formation of printed circuits |
| US4352714A (en) * | 1980-09-29 | 1982-10-05 | Union Carbide Corporation | Method for making a metal-to-ceramic insulator seal for electrochemical cells |
| DE3235675A1 (de) * | 1982-09-27 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von halbleiterchip-filmtraegern |
| DE3235702C2 (de) * | 1982-09-27 | 1985-01-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Filmträgern für Halbleiterchips |
| JPH074995B2 (ja) * | 1986-05-20 | 1995-01-25 | 株式会社東芝 | Icカ−ド及びその製造方法 |
| DE3907004A1 (de) * | 1989-03-04 | 1990-09-06 | Contraves Ag | Verfahren zum herstellen von duennschichtschaltungen |
| US5345529A (en) * | 1993-07-06 | 1994-09-06 | At&T Bell Laboratories | Method for assembly of an optical fiber connective device |
| US5416872A (en) * | 1993-07-06 | 1995-05-16 | At&T Corp. | Arrangement for interconnecting an optical fiber an optoelectronic component |
| JPH0714597U (ja) * | 1993-08-17 | 1995-03-10 | ワデン工業株式会社 | 発熱体 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1121668A (en) * | 1965-12-07 | 1968-07-31 | Hermsdorf Keramik Veb | Method for the production of etch-resist masks on substrates |
-
1971
- 1971-01-19 DE DE2102421A patent/DE2102421C3/de not_active Expired
- 1971-09-03 CH CH1291471A patent/CH576003A5/xx not_active IP Right Cessation
- 1971-10-01 AT AT852171A patent/AT317337B/de not_active IP Right Cessation
- 1971-11-05 GB GB5150371A patent/GB1327670A/en not_active Expired
- 1971-12-29 US US00213427A patent/US3829316A/en not_active Expired - Lifetime
-
1972
- 1972-01-13 IT IT19320/72A patent/IT946536B/it active
- 1972-01-17 FR FR7201383A patent/FR2122450B1/fr not_active Expired
- 1972-01-18 CA CA132,663A patent/CA985606A/en not_active Expired
- 1972-01-19 NL NL7200742A patent/NL7200742A/xx unknown
- 1972-01-19 JP JP754272A patent/JPS5535468B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3829316A (en) | 1974-08-13 |
| DE2102421B2 (de) | 1979-01-11 |
| IT946536B (it) | 1973-05-21 |
| FR2122450A1 (OSRAM) | 1972-09-01 |
| CA985606A (en) | 1976-03-16 |
| CH576003A5 (OSRAM) | 1976-05-31 |
| DE2102421A1 (de) | 1973-06-14 |
| JPS5535468B1 (OSRAM) | 1980-09-13 |
| NL7200742A (OSRAM) | 1972-07-21 |
| AT317337B (de) | 1974-08-26 |
| FR2122450B1 (OSRAM) | 1975-06-13 |
| GB1327670A (en) | 1973-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |