DE2052671A1 - Integrierte Haltleiterschaltung - Google Patents

Integrierte Haltleiterschaltung

Info

Publication number
DE2052671A1
DE2052671A1 DE19702052671 DE2052671A DE2052671A1 DE 2052671 A1 DE2052671 A1 DE 2052671A1 DE 19702052671 DE19702052671 DE 19702052671 DE 2052671 A DE2052671 A DE 2052671A DE 2052671 A1 DE2052671 A1 DE 2052671A1
Authority
DE
Germany
Prior art keywords
substrate
area
elements
circuit
surface density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702052671
Other languages
German (de)
English (en)
Inventor
Kenchi Shiraishi Masamichi Sato Katsuo Tokio R Shimakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of DE2052671A1 publication Critical patent/DE2052671A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19702052671 1969-10-27 1970-10-27 Integrierte Haltleiterschaltung Pending DE2052671A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44085903A JPS5034914B1 (enrdf_load_stackoverflow) 1969-10-27 1969-10-27

Publications (1)

Publication Number Publication Date
DE2052671A1 true DE2052671A1 (de) 1971-05-27

Family

ID=13871796

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702052671 Pending DE2052671A1 (de) 1969-10-27 1970-10-27 Integrierte Haltleiterschaltung

Country Status (6)

Country Link
JP (1) JPS5034914B1 (enrdf_load_stackoverflow)
DE (1) DE2052671A1 (enrdf_load_stackoverflow)
GB (1) GB1334686A (enrdf_load_stackoverflow)
HK (1) HK28776A (enrdf_load_stackoverflow)
MY (1) MY7600040A (enrdf_load_stackoverflow)
NL (1) NL178461C (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2648646A1 (de) * 1975-10-29 1977-05-05 Tokyo Shibaura Electric Co Integrierte halbleiterschaltung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2648646A1 (de) * 1975-10-29 1977-05-05 Tokyo Shibaura Electric Co Integrierte halbleiterschaltung

Also Published As

Publication number Publication date
JPS5034914B1 (enrdf_load_stackoverflow) 1975-11-12
NL7015188A (enrdf_load_stackoverflow) 1971-04-29
MY7600040A (en) 1976-12-31
NL178461C (nl) 1986-03-17
HK28776A (en) 1976-05-28
GB1334686A (en) 1973-10-24
NL178461B (nl) 1985-10-16

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