GB1334686A - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB1334686A
GB1334686A GB5048470A GB5048470A GB1334686A GB 1334686 A GB1334686 A GB 1334686A GB 5048470 A GB5048470 A GB 5048470A GB 5048470 A GB5048470 A GB 5048470A GB 1334686 A GB1334686 A GB 1334686A
Authority
GB
United Kingdom
Prior art keywords
substrate
doping
conductivity type
doped
oct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5048470A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1334686A publication Critical patent/GB1334686A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB5048470A 1969-10-27 1970-10-23 Semiconductor integrated circuits Expired GB1334686A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44085903A JPS5034914B1 (enrdf_load_stackoverflow) 1969-10-27 1969-10-27

Publications (1)

Publication Number Publication Date
GB1334686A true GB1334686A (en) 1973-10-24

Family

ID=13871796

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5048470A Expired GB1334686A (en) 1969-10-27 1970-10-23 Semiconductor integrated circuits

Country Status (6)

Country Link
JP (1) JPS5034914B1 (enrdf_load_stackoverflow)
DE (1) DE2052671A1 (enrdf_load_stackoverflow)
GB (1) GB1334686A (enrdf_load_stackoverflow)
HK (1) HK28776A (enrdf_load_stackoverflow)
MY (1) MY7600040A (enrdf_load_stackoverflow)
NL (1) NL178461C (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267276A (en) * 1975-10-29 1977-06-03 Toshiba Corp Manufacture of semiconductor unit

Also Published As

Publication number Publication date
JPS5034914B1 (enrdf_load_stackoverflow) 1975-11-12
DE2052671A1 (de) 1971-05-27
NL7015188A (enrdf_load_stackoverflow) 1971-04-29
MY7600040A (en) 1976-12-31
NL178461C (nl) 1986-03-17
HK28776A (en) 1976-05-28
NL178461B (nl) 1985-10-16

Similar Documents

Publication Publication Date Title
GB959667A (en) Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes
GB1272788A (en) Improvements in and relating to a semi-conductor wafer for integrated circuits and a method of forming the wafer
GB1532427A (en) Integrated circuits
JPS54157092A (en) Semiconductor integrated circuit device
GB1153428A (en) Improvements in Semiconductor Devices.
GB883906A (en) Improvements in semi-conductive arrangements
GB1155578A (en) Field Effect Transistor
US2993998A (en) Transistor combinations
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
GB1173919A (en) Semiconductor Device with a pn-Junction
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
KR890016686A (ko) 용해도 한계를 초과하는 레벨로 도핑된 영역을 갖는 반도체장치
GB1320778A (en) Semiconductor devices
US3430112A (en) Insulated gate field effect transistor with channel portions of different conductivity
GB1217472A (en) Integrated circuits
US4109272A (en) Lateral bipolar transistor
US3564355A (en) Semiconductor device employing a p-n junction between induced p- and n- regions
US3585463A (en) Complementary enhancement-type mos transistors
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors
GB1334745A (en) Semiconductor devices
GB1334686A (en) Semiconductor integrated circuits
GB1246864A (en) Transistor
US3497775A (en) Control of inversion layers in coated semiconductor devices
GB1219660A (en) Integrated semiconductor circuits
GB1311966A (en) Integrated circuits

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years