DE2013576C3 - Verfahren zum Aufbringen von dotierten und undotierten Kieselsäurefilmen auf Halbleiteroberflächen - Google Patents

Verfahren zum Aufbringen von dotierten und undotierten Kieselsäurefilmen auf Halbleiteroberflächen

Info

Publication number
DE2013576C3
DE2013576C3 DE2013576A DE2013576A DE2013576C3 DE 2013576 C3 DE2013576 C3 DE 2013576C3 DE 2013576 A DE2013576 A DE 2013576A DE 2013576 A DE2013576 A DE 2013576A DE 2013576 C3 DE2013576 C3 DE 2013576C3
Authority
DE
Germany
Prior art keywords
silicon
acetate
layer
semiconductor
vitreous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2013576A
Other languages
German (de)
English (en)
Other versions
DE2013576A1 (de
DE2013576B2 (de
Inventor
Milton Genser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GENSER M
Original Assignee
GENSER M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GENSER M filed Critical GENSER M
Publication of DE2013576A1 publication Critical patent/DE2013576A1/de
Publication of DE2013576B2 publication Critical patent/DE2013576B2/de
Application granted granted Critical
Publication of DE2013576C3 publication Critical patent/DE2013576C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5076—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with masses bonded by inorganic cements
    • C04B41/5089—Silica sols, alkyl, ammonium or alkali metal silicate cements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/18—Diffusion lifetime killers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
DE2013576A 1969-11-25 1970-03-21 Verfahren zum Aufbringen von dotierten und undotierten Kieselsäurefilmen auf Halbleiteroberflächen Expired DE2013576C3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87969169A 1969-11-25 1969-11-25
NL7107206A NL7107206A (cg-RX-API-DMAC10.html) 1969-11-25 1971-05-26
FR7120484A FR2140261A1 (cg-RX-API-DMAC10.html) 1969-11-25 1971-06-07

Publications (3)

Publication Number Publication Date
DE2013576A1 DE2013576A1 (de) 1971-05-27
DE2013576B2 DE2013576B2 (de) 1973-11-29
DE2013576C3 true DE2013576C3 (de) 1974-06-27

Family

ID=27249585

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2013576A Expired DE2013576C3 (de) 1969-11-25 1970-03-21 Verfahren zum Aufbringen von dotierten und undotierten Kieselsäurefilmen auf Halbleiteroberflächen

Country Status (5)

Country Link
US (1) US3615943A (cg-RX-API-DMAC10.html)
DE (1) DE2013576C3 (cg-RX-API-DMAC10.html)
FR (1) FR2140261A1 (cg-RX-API-DMAC10.html)
GB (1) GB1297857A (cg-RX-API-DMAC10.html)
NL (1) NL7107206A (cg-RX-API-DMAC10.html)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2012080A1 (de) * 1970-03-13 1971-09-23 Siemens Ag Verfahren zum Herstellen von dichten Metalloxidbelegungen auf Halbleiteroberflächen
US3928225A (en) * 1971-04-08 1975-12-23 Semikron Gleichrichterbau Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion
US3798081A (en) * 1972-02-14 1974-03-19 Ibm Method for diffusing as into silicon from a solid phase
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film
US3856588A (en) * 1972-10-11 1974-12-24 Matsushita Electric Industrial Co Ltd Stabilizing insulation for diffused group iii-v devices
DE2335025C2 (de) * 1973-07-10 1982-07-08 Texas Instruments Inc., 75222 Dallas, Tex. Dotierungsmittellösung
US3986905A (en) * 1973-12-26 1976-10-19 Monsanto Company Process for producing semiconductor devices with uniform junctions
FR2280974A1 (fr) * 1974-08-01 1976-02-27 Silec Semi Conducteurs Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
JPS60153119A (ja) * 1984-01-20 1985-08-12 Fuji Electric Corp Res & Dev Ltd 不純物拡散方法
DE3704518A1 (de) * 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
US5527872A (en) * 1990-09-14 1996-06-18 At&T Global Information Solutions Company Electronic device with a spin-on glass dielectric layer
US5472488A (en) * 1990-09-14 1995-12-05 Hyundai Electronics America Coating solution for forming glassy layers
US5152834A (en) * 1990-09-14 1992-10-06 Ncr Corporation Spin-on glass composition
US5302198A (en) * 1990-09-14 1994-04-12 Ncr Corporation Coating solution for forming glassy layers
US5763320A (en) * 1995-12-11 1998-06-09 Stevens; Gary Don Boron doping a semiconductor particle
US6002177A (en) * 1995-12-27 1999-12-14 International Business Machines Corporation High density integrated circuit packaging with chip stacking and via interconnections
DE19708808B4 (de) * 1997-03-04 2010-10-21 Biedermann, Bianca Verfahren und Vorrichtung zum Aufbringen von transparenten Schutzschichten auf Gegenstände
KR20010042689A (ko) * 1998-04-13 2001-05-25 트러스티스 오브 프린스턴 유니버시티 필름형성 불순물 첨가 또는 제거후 폴리머 광전성질변성방법
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
JP3904518B2 (ja) * 2001-04-09 2007-04-11 積水化学工業株式会社 光反応性組成物
US6740158B2 (en) * 2002-05-09 2004-05-25 Rwe Schott Solar Inc. Process for coating silicon shot with dopant for addition of dopant in crystal growth
DE502009000601D1 (de) * 2009-03-27 2011-06-09 Kioto Photovoltaics Gmbh Verfahren zum Aufbringen einer Anti-Reflexionsschicht auf einen Silizium-Wafer

Also Published As

Publication number Publication date
FR2140261A1 (cg-RX-API-DMAC10.html) 1973-01-19
DE2013576A1 (de) 1971-05-27
US3615943A (en) 1971-10-26
NL7107206A (cg-RX-API-DMAC10.html) 1972-11-28
GB1297857A (cg-RX-API-DMAC10.html) 1972-11-29
DE2013576B2 (de) 1973-11-29

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee