DE2008319A1 - Verfahren zum Herstellen eines pnp Silicium Transistors - Google Patents

Verfahren zum Herstellen eines pnp Silicium Transistors

Info

Publication number
DE2008319A1
DE2008319A1 DE19702008319 DE2008319A DE2008319A1 DE 2008319 A1 DE2008319 A1 DE 2008319A1 DE 19702008319 DE19702008319 DE 19702008319 DE 2008319 A DE2008319 A DE 2008319A DE 2008319 A1 DE2008319 A1 DE 2008319A1
Authority
DE
Germany
Prior art keywords
base
zone
diffusion
emitter
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702008319
Other languages
German (de)
English (en)
Inventor
Joachim Dipl Phys Grasser Leo Dipl Phys 8000 München Muller Wolfgang Dipl Phys Dr 8011 Vaterstetten Dathe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19702008319 priority Critical patent/DE2008319A1/de
Priority to CH1862570A priority patent/CH518007A/de
Priority to NL7100179A priority patent/NL7100179A/xx
Priority to AT37971A priority patent/AT324426B/de
Priority to US00116943A priority patent/US3791884A/en
Priority to SE02303/71A priority patent/SE356847B/xx
Priority to FR7106046A priority patent/FR2081028A1/fr
Priority to GB2166371A priority patent/GB1316712A/en
Publication of DE2008319A1 publication Critical patent/DE2008319A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19702008319 1970-02-23 1970-02-23 Verfahren zum Herstellen eines pnp Silicium Transistors Pending DE2008319A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19702008319 DE2008319A1 (de) 1970-02-23 1970-02-23 Verfahren zum Herstellen eines pnp Silicium Transistors
CH1862570A CH518007A (de) 1970-02-23 1970-12-16 Verfahren zum Herstellen eines pnp-Silicium-Transistors
NL7100179A NL7100179A (enExample) 1970-02-23 1971-01-07
AT37971A AT324426B (de) 1970-02-23 1971-01-18 Verfahren zum herstellen eines pnp-silizium-transistors
US00116943A US3791884A (en) 1970-02-23 1971-02-19 Method of producing a pnp silicon transistor
SE02303/71A SE356847B (enExample) 1970-02-23 1971-02-23
FR7106046A FR2081028A1 (enExample) 1970-02-23 1971-02-23
GB2166371A GB1316712A (en) 1970-02-23 1971-04-19 Pnp-silicon transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702008319 DE2008319A1 (de) 1970-02-23 1970-02-23 Verfahren zum Herstellen eines pnp Silicium Transistors

Publications (1)

Publication Number Publication Date
DE2008319A1 true DE2008319A1 (de) 1971-09-09

Family

ID=5763100

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702008319 Pending DE2008319A1 (de) 1970-02-23 1970-02-23 Verfahren zum Herstellen eines pnp Silicium Transistors

Country Status (8)

Country Link
US (1) US3791884A (enExample)
AT (1) AT324426B (enExample)
CH (1) CH518007A (enExample)
DE (1) DE2008319A1 (enExample)
FR (1) FR2081028A1 (enExample)
GB (1) GB1316712A (enExample)
NL (1) NL7100179A (enExample)
SE (1) SE356847B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416051A (en) * 1979-01-22 1983-11-22 Westinghouse Electric Corp. Restoration of high infrared sensitivity in extrinsic silicon detectors
US4233093A (en) * 1979-04-12 1980-11-11 Pel Chow Process for the manufacture of PNP transistors high power
EP0229180B1 (en) * 1985-06-17 1992-01-22 Sony Corporation Process for manufacturing semiconductor devices
US5789308A (en) * 1995-06-06 1998-08-04 Advanced Micro Devices, Inc. Manufacturing method for wafer slice starting material to optimize extrinsic gettering during semiconductor fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
GB1209914A (en) * 1967-03-29 1970-10-21 Marconi Co Ltd Improvements in or relating to semi-conductor devices
US3669768A (en) * 1969-12-04 1972-06-13 Bell Telephone Labor Inc Fabrication process for light sensitive silicon diode array target

Also Published As

Publication number Publication date
FR2081028A1 (enExample) 1971-11-26
CH518007A (de) 1972-01-15
SE356847B (enExample) 1973-06-04
AT324426B (de) 1975-08-25
US3791884A (en) 1974-02-12
NL7100179A (enExample) 1971-08-25
GB1316712A (en) 1973-05-16

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