FR2081028A1 - - Google Patents

Info

Publication number
FR2081028A1
FR2081028A1 FR7106046A FR7106046A FR2081028A1 FR 2081028 A1 FR2081028 A1 FR 2081028A1 FR 7106046 A FR7106046 A FR 7106046A FR 7106046 A FR7106046 A FR 7106046A FR 2081028 A1 FR2081028 A1 FR 2081028A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7106046A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2081028A1 publication Critical patent/FR2081028A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7106046A 1970-02-23 1971-02-23 Withdrawn FR2081028A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702008319 DE2008319A1 (de) 1970-02-23 1970-02-23 Verfahren zum Herstellen eines pnp Silicium Transistors

Publications (1)

Publication Number Publication Date
FR2081028A1 true FR2081028A1 (fr) 1971-11-26

Family

ID=5763100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7106046A Withdrawn FR2081028A1 (fr) 1970-02-23 1971-02-23

Country Status (8)

Country Link
US (1) US3791884A (fr)
AT (1) AT324426B (fr)
CH (1) CH518007A (fr)
DE (1) DE2008319A1 (fr)
FR (1) FR2081028A1 (fr)
GB (1) GB1316712A (fr)
NL (1) NL7100179A (fr)
SE (1) SE356847B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416051A (en) * 1979-01-22 1983-11-22 Westinghouse Electric Corp. Restoration of high infrared sensitivity in extrinsic silicon detectors
US4233093A (en) * 1979-04-12 1980-11-11 Pel Chow Process for the manufacture of PNP transistors high power
US4771009A (en) * 1985-06-17 1988-09-13 Sony Corporation Process for manufacturing semiconductor devices by implantation and diffusion
US5789308A (en) * 1995-06-06 1998-08-04 Advanced Micro Devices, Inc. Manufacturing method for wafer slice starting material to optimize extrinsic gettering during semiconductor fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
GB1209914A (en) * 1967-03-29 1970-10-21 Marconi Co Ltd Improvements in or relating to semi-conductor devices
US3669768A (en) * 1969-12-04 1972-06-13 Bell Telephone Labor Inc Fabrication process for light sensitive silicon diode array target

Also Published As

Publication number Publication date
GB1316712A (en) 1973-05-16
SE356847B (fr) 1973-06-04
NL7100179A (fr) 1971-08-25
DE2008319A1 (de) 1971-09-09
CH518007A (de) 1972-01-15
US3791884A (en) 1974-02-12
AT324426B (de) 1975-08-25

Similar Documents

Publication Publication Date Title
FR2081028A1 (fr)
AU2044470A (fr)
AU2085370A (fr)
AU1833270A (fr)
AU2017870A (fr)
AU1716970A (fr)
AU1517670A (fr)
AU1943370A (fr)
AU1879170A (fr)
AU2144270A (fr)
AU1969370A (fr)
AU1189670A (fr)
AU1832970A (fr)
AU1918570A (fr)
AU1881070A (fr)
AU2130770A (fr)
AU1974970A (fr)
AU1872870A (fr)
AU1841070A (fr)
AU1581370A (fr)
AU1591370A (fr)
AU1603270A (fr)
AU1689770A (fr)
AU2130570A (fr)
AU2061170A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse