GB1316712A - Pnp-silicon transistors - Google Patents
Pnp-silicon transistorsInfo
- Publication number
- GB1316712A GB1316712A GB2166371A GB2166371A GB1316712A GB 1316712 A GB1316712 A GB 1316712A GB 2166371 A GB2166371 A GB 2166371A GB 2166371 A GB2166371 A GB 2166371A GB 1316712 A GB1316712 A GB 1316712A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- base
- wafer
- type
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702008319 DE2008319A1 (de) | 1970-02-23 | 1970-02-23 | Verfahren zum Herstellen eines pnp Silicium Transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1316712A true GB1316712A (en) | 1973-05-16 |
Family
ID=5763100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2166371A Expired GB1316712A (en) | 1970-02-23 | 1971-04-19 | Pnp-silicon transistors |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3791884A (enExample) |
| AT (1) | AT324426B (enExample) |
| CH (1) | CH518007A (enExample) |
| DE (1) | DE2008319A1 (enExample) |
| FR (1) | FR2081028A1 (enExample) |
| GB (1) | GB1316712A (enExample) |
| NL (1) | NL7100179A (enExample) |
| SE (1) | SE356847B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4416051A (en) * | 1979-01-22 | 1983-11-22 | Westinghouse Electric Corp. | Restoration of high infrared sensitivity in extrinsic silicon detectors |
| US4233093A (en) * | 1979-04-12 | 1980-11-11 | Pel Chow | Process for the manufacture of PNP transistors high power |
| EP0229180B1 (en) * | 1985-06-17 | 1992-01-22 | Sony Corporation | Process for manufacturing semiconductor devices |
| US5789308A (en) * | 1995-06-06 | 1998-08-04 | Advanced Micro Devices, Inc. | Manufacturing method for wafer slice starting material to optimize extrinsic gettering during semiconductor fabrication |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3418181A (en) * | 1965-10-20 | 1968-12-24 | Motorola Inc | Method of forming a semiconductor by masking and diffusing |
| GB1209914A (en) * | 1967-03-29 | 1970-10-21 | Marconi Co Ltd | Improvements in or relating to semi-conductor devices |
| US3669768A (en) * | 1969-12-04 | 1972-06-13 | Bell Telephone Labor Inc | Fabrication process for light sensitive silicon diode array target |
-
1970
- 1970-02-23 DE DE19702008319 patent/DE2008319A1/de active Pending
- 1970-12-16 CH CH1862570A patent/CH518007A/de not_active IP Right Cessation
-
1971
- 1971-01-07 NL NL7100179A patent/NL7100179A/xx unknown
- 1971-01-18 AT AT37971A patent/AT324426B/de not_active IP Right Cessation
- 1971-02-19 US US00116943A patent/US3791884A/en not_active Expired - Lifetime
- 1971-02-23 FR FR7106046A patent/FR2081028A1/fr not_active Withdrawn
- 1971-02-23 SE SE02303/71A patent/SE356847B/xx unknown
- 1971-04-19 GB GB2166371A patent/GB1316712A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2008319A1 (de) | 1971-09-09 |
| FR2081028A1 (enExample) | 1971-11-26 |
| CH518007A (de) | 1972-01-15 |
| SE356847B (enExample) | 1973-06-04 |
| AT324426B (de) | 1975-08-25 |
| US3791884A (en) | 1974-02-12 |
| NL7100179A (enExample) | 1971-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |