DE2005271C3 - Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat - Google Patents

Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat

Info

Publication number
DE2005271C3
DE2005271C3 DE2005271A DE2005271A DE2005271C3 DE 2005271 C3 DE2005271 C3 DE 2005271C3 DE 2005271 A DE2005271 A DE 2005271A DE 2005271 A DE2005271 A DE 2005271A DE 2005271 C3 DE2005271 C3 DE 2005271C3
Authority
DE
Germany
Prior art keywords
layer
epitaxial
doped
semiconductor substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2005271A
Other languages
German (de)
English (en)
Other versions
DE2005271B2 (de
DE2005271A1 (de
Inventor
Edward Stanley Poughkeepsie N.Y. Wajda (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2005271A1 publication Critical patent/DE2005271A1/de
Publication of DE2005271B2 publication Critical patent/DE2005271B2/de
Application granted granted Critical
Publication of DE2005271C3 publication Critical patent/DE2005271C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE2005271A 1969-02-27 1970-02-05 Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat Expired DE2005271C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80281069A 1969-02-27 1969-02-27

Publications (3)

Publication Number Publication Date
DE2005271A1 DE2005271A1 (de) 1970-09-10
DE2005271B2 DE2005271B2 (de) 1979-09-20
DE2005271C3 true DE2005271C3 (de) 1980-06-12

Family

ID=25184768

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2005271A Expired DE2005271C3 (de) 1969-02-27 1970-02-05 Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat

Country Status (5)

Country Link
US (1) US3660180A (https=)
JP (1) JPS49386B1 (https=)
DE (1) DE2005271C3 (https=)
FR (1) FR2032448B1 (https=)
GB (1) GB1234179A (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
JPS52915B1 (https=) * 1971-06-01 1977-01-11
US3765940A (en) * 1971-11-08 1973-10-16 Texas Instruments Inc Vacuum evaporated thin film resistors
US3982974A (en) * 1971-11-22 1976-09-28 International Business Machines Corporation Compensation of autodoping in the manufacture of integrated circuits
GB1361303A (en) * 1972-02-11 1974-07-24 Ferranti Ltd Manufacture of semiconductor devices
US3915764A (en) * 1973-05-18 1975-10-28 Westinghouse Electric Corp Sputtering method for growth of thin uniform layers of epitaxial semiconductive materials doped with impurities
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
JPS5623739A (en) * 1979-08-04 1981-03-06 Tohoku Metal Ind Ltd Manufactue of semiconductor element having buried layer
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer
US4687682A (en) * 1986-05-02 1987-08-18 American Telephone And Telegraph Company, At&T Technologies, Inc. Back sealing of silicon wafers
JPH01161826A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 気相エピタキシャル成長法
US4859626A (en) * 1988-06-03 1989-08-22 Texas Instruments Incorporated Method of forming thin epitaxial layers using multistep growth for autodoping control
FR2766845B1 (fr) * 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic
JP2004533715A (ja) * 2001-03-30 2004-11-04 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 低温Ｓｉ及びＳｉＧｅエピタキシーにおけるｎ−型オートドーピングの抑制
US6844084B2 (en) * 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB830391A (en) * 1955-10-28 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering of metal and dielectric films
US3021271A (en) * 1959-04-27 1962-02-13 Gen Mills Inc Growth of solid layers on substrates which are kept under ion bombardment before and during deposition
NL265823A (https=) * 1960-06-13
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
GB986403A (en) * 1961-11-20 1965-03-17 Texas Instruments Inc Method of forming p-n junctions
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate
DE1544264C3 (de) * 1965-07-01 1974-10-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase
US3522164A (en) * 1965-10-21 1970-07-28 Texas Instruments Inc Semiconductor surface preparation and device fabrication
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
FR1541490A (fr) * 1966-10-21 1968-10-04 Philips Nv Dispositif semi-conducteur et procédé pour sa fabrication
US3494809A (en) * 1967-06-05 1970-02-10 Honeywell Inc Semiconductor processing

Also Published As

Publication number Publication date
JPS49386B1 (https=) 1974-01-07
FR2032448B1 (https=) 1973-07-13
US3660180A (en) 1972-05-02
GB1234179A (https=) 1971-06-03
DE2005271B2 (de) 1979-09-20
DE2005271A1 (de) 1970-09-10
FR2032448A1 (https=) 1970-11-27

Similar Documents

Publication Publication Date Title
DE2005271C3 (de) Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat
DE2618733C2 (de) Halbleiterbauelement
DE1544329A1 (de) Verfahren zur Herstellung epitaxialer Schichten bestimmter Form
DE3882849T2 (de) Anordnungen mit cmos-isolator-substrat mit niedriger streuung und verfahren zu deren herstellung.
EP0681314B1 (de) Komposit-Struktur für elektronische Bauteile und Verfahren zu deren Herstellung
DE1223951B (de) Verfahren zur Herstellung von Halbleiter-bauelementen mit einem oder mehreren PN-UEbergaengen
DE2812658B2 (de) Verfahren zum selektiven Diffundieren von Aluminium in ein Einkristall-Siliciumhalbleitersubstrat
DE1138481C2 (de) Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE4009837A1 (de) Verfahren zur herstellung einer halbleitereinrichtung
DE3123234A1 (de) "verfahren zur herstellung eines pn-uebergangs in einem halbleitermaterial der gruppe ii-vi"
DE112018002163T5 (de) Verfahren zur Herstellung eines Silicium-Einkristalls, Verfahren zur Herstellung eines epitaktischen Silicium-Wafers, Silicium-Einkristall, und epitaktischer Silicium-Wafer
DE1285465B (de) Verfahren zum epitaktischen Aufwachsen von Schichten aus Silicium oder Germanium
DE3687354T2 (de) Verfahren zur dotierungsdiffusion in einem halbleiterkoerper.
DE2419142A1 (de) Verfahren zum aufwachsen einer halbleiterschicht aus der dampfphase
DE2154386C3 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
EP0005744A1 (de) Verfahren zum Aufwachsen von Epitaxieschichten auf selektiv hochdotierten Siliciumsubstraten
DE3689387T2 (de) Verfahren zur Herstellung einer Dünnschicht aus GaAs.
DE69821560T2 (de) Epitaxieverfahren auf einem Siliciumsubstrat mit durch Arsen hochdotierten Gebieten
DE2732582C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69104650T2 (de) Verfahren zur Herstellung eines Halbleiterlasers.
DE2049696C3 (de) Halbleiterbauelement und Verfahren zum Herstellen
DE1539655A1 (de) Verfahren zur Herstellung von mehrschichtigen Halbleiterbauelementen
DE2101322A1 (de) Verfahren zum Herabsetzen bzw zur vollständigen Unterdrückung von Ausdiffu sionserscheinungen bei der Herstellung von epitaktischen Halbleiterschichten
DE1544191B2 (de) Verfahren zur Herstellung von Halbleitermaterial
DE1544191C3 (de) Verfahren zur Herstellung von Halbleitermaterial

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee