GB986403A - Method of forming p-n junctions - Google Patents

Method of forming p-n junctions

Info

Publication number
GB986403A
GB986403A GB4363762A GB4363762A GB986403A GB 986403 A GB986403 A GB 986403A GB 4363762 A GB4363762 A GB 4363762A GB 4363762 A GB4363762 A GB 4363762A GB 986403 A GB986403 A GB 986403A
Authority
GB
United Kingdom
Prior art keywords
hydrogen
volume
doped
layer
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4363762A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB986403A publication Critical patent/GB986403A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

<PICT:0986403/C6-C7/1> A method of forming a PN junction by epitaxial deposition comprises depositing on a semi-conductor substrate of one conductivity type a continuation layer of the same conductivity type semi-conductor and then depositing a layer of opposite conductivity type semi-conductor. In a first example a single crystal silicon substrate heavily doped with antimony is heated to 1250 DEG C. in a reactor and etched with hydrogen at a rate of 10 litres per minute for five to ten minutes. 1.5% by volume of silicon tetrachloride doped with 60 parts per 109 by volume of antimony pentachloride is added to the hydrogen stream for three minutes to deposit an N type continuation layer. The reactor is flushed with hydrogen and then 1.5% by volume of silicon tetrachloride doped with 100 parts per 106 by volume of boron tribromide is added to the hydrogen for half a minute to deposit a P type layer. In a second example the process of the first example is applied to a boron doped silicon substrate using the doping materials in reverse order, the growth times of the P tye continuation layer and the N type layer being three minutes and ten minutes respectively, a P type emitter being added by normal diffusion methods to form a transistor. In a third example an antimony doped germanium substrate is heated to 850 DEG C. and hydrogen etched using a flow rate of 3.5 litres per minute. 2% by volume of germanium tetrachloride doped with 0.27 parts per 106 antimony pentachloride is aded to the hydrogen flow to deposit an N aype continuation layer. The reactor is then flushed with hydrogen and the temperature increased to 880 DEG C. and the flow rate to 11.2 litres per minute. 0.6% by volume of germanium tetrachloride doped with 0.4% by volume boron trobromide is then added to the hydrogen stream to deposit a P type layer. An evaporator is described in which the semi-conducor and impurity solutions are vaporized and added to the hydrogen stream.
GB4363762A 1961-11-20 1962-11-19 Method of forming p-n junctions Expired GB986403A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15345961A 1961-11-20 1961-11-20

Publications (1)

Publication Number Publication Date
GB986403A true GB986403A (en) 1965-03-17

Family

ID=22547314

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4363762A Expired GB986403A (en) 1961-11-20 1962-11-19 Method of forming p-n junctions

Country Status (2)

Country Link
GB (1) GB986403A (en)
MY (1) MY6900202A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3716422A (en) * 1970-03-30 1973-02-13 Ibm Method of growing an epitaxial layer by controlling autodoping
EP1798307A1 (en) * 2005-12-19 2007-06-20 Rohm and Haas Electronic Materials LLC Organometallic composition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3716422A (en) * 1970-03-30 1973-02-13 Ibm Method of growing an epitaxial layer by controlling autodoping
EP1798307A1 (en) * 2005-12-19 2007-06-20 Rohm and Haas Electronic Materials LLC Organometallic composition
CN1986877B (en) * 2005-12-19 2010-09-01 罗门哈斯电子材料有限公司 Organometallic composition

Also Published As

Publication number Publication date
MY6900202A (en) 1969-12-31

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