DE3687354T2 - Verfahren zur dotierungsdiffusion in einem halbleiterkoerper. - Google Patents

Verfahren zur dotierungsdiffusion in einem halbleiterkoerper.

Info

Publication number
DE3687354T2
DE3687354T2 DE8686102408T DE3687354T DE3687354T2 DE 3687354 T2 DE3687354 T2 DE 3687354T2 DE 8686102408 T DE8686102408 T DE 8686102408T DE 3687354 T DE3687354 T DE 3687354T DE 3687354 T2 DE3687354 T2 DE 3687354T2
Authority
DE
Germany
Prior art keywords
semiconductor body
dope diffusion
dope
diffusion
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686102408T
Other languages
English (en)
Other versions
DE3687354D1 (de
Inventor
Harold John Hovel
Thermon Ezzard Mckoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3687354D1 publication Critical patent/DE3687354D1/de
Application granted granted Critical
Publication of DE3687354T2 publication Critical patent/DE3687354T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2233—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8686102408T 1985-03-15 1986-02-25 Verfahren zur dotierungsdiffusion in einem halbleiterkoerper. Expired - Fee Related DE3687354T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/712,300 US4592793A (en) 1985-03-15 1985-03-15 Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates

Publications (2)

Publication Number Publication Date
DE3687354D1 DE3687354D1 (de) 1993-02-11
DE3687354T2 true DE3687354T2 (de) 1993-07-15

Family

ID=24861555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686102408T Expired - Fee Related DE3687354T2 (de) 1985-03-15 1986-02-25 Verfahren zur dotierungsdiffusion in einem halbleiterkoerper.

Country Status (5)

Country Link
US (1) US4592793A (de)
EP (1) EP0194499B1 (de)
JP (1) JPS61215300A (de)
CA (1) CA1217880A (de)
DE (1) DE3687354T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742022A (en) * 1986-06-26 1988-05-03 Gte Laboratories Incorporated Method of diffusing zinc into III-V compound semiconductor material
US4749615A (en) * 1986-10-31 1988-06-07 Stemcor Corporation Semiconductor dopant source
NL8801631A (nl) * 1988-06-27 1990-01-16 Philips Nv Werkwijze voor het vervaardigen van een optoelektronische inrichting.
US5284783A (en) * 1988-10-27 1994-02-08 Fujitsu Limited Method of fabricating a heterojunction bipolar transistor
JPH0793277B2 (ja) * 1989-02-28 1995-10-09 インダストリアル・テクノロジー・リサーチ・インステイテユート ＩｎＰ基板中へのＣｄ拡散方法
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
US5183779A (en) * 1991-05-03 1993-02-02 The United States Of America As Represented By The Secretary Of The Navy Method for doping GaAs with high vapor pressure elements
JP4022997B2 (ja) * 1998-07-29 2007-12-19 住友電気工業株式会社 ３−５族化合物半導体結晶へのＺｎ拡散方法及び拡散装置
EP1739210B1 (de) * 2005-07-01 2012-03-07 Freiberger Compound Materials GmbH Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall
US20070006801A1 (en) * 2005-07-09 2007-01-11 Stringfellow Gerald B Use of surfactants to control unintentional dopant in semiconductors
US8329295B2 (en) 2008-07-11 2012-12-11 Freiberger Compound Materials Gmbh Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
CN108085744A (zh) * 2017-12-27 2018-05-29 中国科学院半导体研究所 一种制备p型锰掺杂的砷化铟单晶的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
GB1143907A (en) * 1967-07-10 1969-02-26 Marconi Co Ltd Improvements in or relating to methods of manufacturing semiconductor devices
US3852128A (en) * 1969-02-22 1974-12-03 Licentia Gmbh Method of diffusing impurities into semiconductor wafers
US3943016A (en) * 1970-12-07 1976-03-09 General Electric Company Gallium-phosphorus simultaneous diffusion process
JPS4839397A (de) * 1971-09-28 1973-06-09
JPS49114355A (de) * 1973-02-28 1974-10-31
US3923563A (en) * 1973-04-16 1975-12-02 Owens Illinois Inc Process for doping silicon semiconductors using an impregnated refractory dopant source
JPS5137915B2 (de) * 1973-10-19 1976-10-19
JPS5751276B2 (de) * 1973-10-23 1982-11-01
US4124417A (en) * 1974-09-16 1978-11-07 U.S. Philips Corporation Method of diffusing impurities in semiconductor bodies
JPS6040694B2 (ja) * 1978-02-03 1985-09-12 ソニー株式会社 ３−５族化合物半導体の熱処理法
JPS6013317B2 (ja) * 1979-03-19 1985-04-06 松下電器産業株式会社 発光ダイオ−ドの製造方法
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
US4312681A (en) * 1980-04-23 1982-01-26 International Business Machines Corporation Annealing of ion implanted III-V compounds in the presence of another III-V
US4348428A (en) * 1980-12-15 1982-09-07 Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences Method of depositing doped amorphous semiconductor on a substrate
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
US4472206A (en) * 1982-11-10 1984-09-18 International Business Machines Corporation Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing
US4544417A (en) * 1983-05-27 1985-10-01 Westinghouse Electric Corp. Transient capless annealing process for the activation of ion implanted compound semiconductors
GB8428888D0 (en) * 1984-11-15 1984-12-27 Standard Telephones Cables Ltd Semiconductor processing
WO1987004006A1 (en) * 1985-12-18 1987-07-02 Allied Corporation Proximity diffusion method for group iii-v semiconductors

Also Published As

Publication number Publication date
EP0194499A2 (de) 1986-09-17
EP0194499A3 (en) 1989-12-13
DE3687354D1 (de) 1993-02-11
EP0194499B1 (de) 1992-12-30
CA1217880A (en) 1987-02-10
JPH055800B2 (de) 1993-01-25
JPS61215300A (ja) 1986-09-25
US4592793A (en) 1986-06-03

Similar Documents

Publication Publication Date Title
DE3684759D1 (de) Verfahren zur herstellungeiner halbleitervorrichtung.
DE3581765D1 (de) Elektrochemisches verfahren und vorrichtung zur herstellung.
DE3679250D1 (de) Verfahren und vorrichtung zur optischen fehlerbestimmung in einem halbleitermaterial.
DE3671259D1 (de) Kettengewirkte raeumliche konstruktion und verfahren und vorrichtung zu deren herstellung.
DE3688526T2 (de) Verfahren und Vorrichtung zur Fehlerbehebung in einem verteilten Verarbeitungssystem.
DE3679472D1 (de) Verfahren und vorrichtung zum sieben.
DE3680166D1 (de) Verfahren und vorrichtung zum automatischen fuegen und bearbeiten.
DE3689735T2 (de) Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
DE68924132D1 (de) Halbleiterbauteil und Verfahren zur dessen Herstellung.
DE3584627D1 (de) Verfahren zur adsorption geloesten fluors.
DE3675741D1 (de) Vernetzte copolyamidimide und verfahren zu deren herstellung.
DE3668254D1 (de) Chip-widerstand und verfahren zur herstellung.
DE3688423T2 (de) Verfahren zur gesicherten uebertragung in einem uebertragungssystem.
DE3687354D1 (de) Verfahren zur dotierungsdiffusion in einem halbleiterkoerper.
DE3680394D1 (de) Verfahren zur herstellung von polyolefinen.
DE3683986D1 (de) Dreidimensionale planare epitaxiale halbleiterstrukturen und verfahren zu deren herstellung.
DE3581999D1 (de) Verfahren und vorrichtung zur herstellung von gepressten formkoerpern.
DE3581039D1 (de) Halbleitervorrichtung mit einem verbindungsdraht und verfahren zu ihrer herstellung.
DE3582143D1 (de) Verfahren zur herstellung einer halbleitervorrichtung.
DE3686132D1 (de) Verfahren zur herstellung von selbstalignierten halbleiterstrukturen.
DE3650186D1 (de) Halbleiteranordnung und Verfahren zu deren Herstellung.
DE3675401D1 (de) Verfahren und einrichtung zur sprachsegmentierung.
DE3685363D1 (de) Verfahren zur herstellung isolierter graeben in einem halbleiterkoerper.
DE3685279D1 (de) Verfahren zur waermebehandlung eines verbindungshalbleitersubstrats.
DE3577405D1 (de) Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee