DE2003952C3 - Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einem unter Anwendung eines anodischen Prozesses erzeugten isolierenden Bereich - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einem unter Anwendung eines anodischen Prozesses erzeugten isolierenden Bereich

Info

Publication number
DE2003952C3
DE2003952C3 DE19702003952 DE2003952A DE2003952C3 DE 2003952 C3 DE2003952 C3 DE 2003952C3 DE 19702003952 DE19702003952 DE 19702003952 DE 2003952 A DE2003952 A DE 2003952A DE 2003952 C3 DE2003952 C3 DE 2003952C3
Authority
DE
Germany
Prior art keywords
layer
silicon
insulating
thickness
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19702003952
Other languages
German (de)
English (en)
Other versions
DE2003952B2 (de
DE2003952A1 (de
Inventor
Tetsushi Musashino Sakai
Yoshio Ohta Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE2003952A1 publication Critical patent/DE2003952A1/de
Publication of DE2003952B2 publication Critical patent/DE2003952B2/de
Application granted granted Critical
Publication of DE2003952C3 publication Critical patent/DE2003952C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
DE19702003952 1969-01-29 1970-01-29 Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einem unter Anwendung eines anodischen Prozesses erzeugten isolierenden Bereich Expired DE2003952C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44005975A JPS4919030B1 (OSRAM) 1969-01-29 1969-01-29

Publications (3)

Publication Number Publication Date
DE2003952A1 DE2003952A1 (de) 1972-02-03
DE2003952B2 DE2003952B2 (de) 1974-08-01
DE2003952C3 true DE2003952C3 (de) 1975-03-20

Family

ID=11625834

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702003952 Expired DE2003952C3 (de) 1969-01-29 1970-01-29 Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einem unter Anwendung eines anodischen Prozesses erzeugten isolierenden Bereich

Country Status (5)

Country Link
JP (1) JPS4919030B1 (OSRAM)
DE (1) DE2003952C3 (OSRAM)
FR (1) FR2029636B1 (OSRAM)
GB (1) GB1287221A (OSRAM)
NL (1) NL142825B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961353A (en) * 1974-10-21 1976-06-01 International Business Machines Corporation High power semiconductor device
US4016017A (en) * 1975-11-28 1977-04-05 International Business Machines Corporation Integrated circuit isolation structure and method for producing the isolation structure
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
GB2038548B (en) * 1978-10-27 1983-03-23 Nippon Telegraph & Telephone Isolating semiconductor device by porous silicon oxide

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE671953A (OSRAM) * 1964-11-05

Also Published As

Publication number Publication date
FR2029636A1 (OSRAM) 1970-10-23
DE2003952B2 (de) 1974-08-01
GB1287221A (en) 1972-08-31
JPS4919030B1 (OSRAM) 1974-05-14
DE2003952A1 (de) 1972-02-03
NL7001170A (OSRAM) 1970-07-31
FR2029636B1 (OSRAM) 1973-10-19
NL142825B (nl) 1974-07-15

Similar Documents

Publication Publication Date Title
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2628407C2 (de) Verfahren zum Herstellen von dielektrischen Isolationszonen
EP0025854B1 (de) Verfahren zum Herstellen von bipolaren Transistoren
DE2652294C2 (de) Verfahren zum Herstellen eingelegter Oxidbereiche in Halbleitersubstraten
DE1764281C3 (de) Verfahren zum Herstellen einer Halbleitervorrichtung
DE2224634C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2615754C2 (OSRAM)
DE2521568A1 (de) Verfahren zum herstellen von integrierten halbleiterbauelementen
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
DE2641752B2 (de) Verfahren zur Herstellung eines Feldeffekttransistors
DE2718449C2 (OSRAM)
DE2639465C2 (de) Verfahren zur Herstellung einer integrierten Halbleiterstruktur
DE2633714C2 (de) Integrierte Halbleiter-Schaltungsanordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung
DE1514018C3 (de) Verfahren zum Aufbringen von Schutz- und Passivierungsschichten auf Halbleiterplättchen
DE2550346A1 (de) Verfahren zum herstellen eines elektrisch isolierenden bereiches in dem halbleiterkoerper eines halbleiterbauelements
DE2162445C3 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1564423C3 (de) Verfahren zum Herstellen eines doppelt diffundierten Transistors sowie nach diesem Verfahren hergestellter Transistor
DE1814747C2 (de) Verfahren zum Herstellen von Feldefekttransistoren
DE2003952C3 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einem unter Anwendung eines anodischen Prozesses erzeugten isolierenden Bereich
DE2111633A1 (de) Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors
DE2114363A1 (de) Spannungsvariabler Kondensator mit erweiterbarem pn-Übergangsbereich
DE1802849B2 (de) Verfahren zum herstellen einer monolithischen schaltung
DE2900747C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2133977C3 (de) Halbleiterbauelement
DE2048201B2 (de) Halbleiterbauelement

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8327 Change in the person/name/address of the patent owner

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO,

8328 Change in the person/name/address of the agent

Free format text: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING. SCHWEPFINGER, K., DIPL.-ING. BUNKE, H., DIPL.-CHEM. DR.RER.NAT. DEGWERT, H., DIPL.-PHYS., PAT.-ANW., 8000 MUENCHEN