DE19952932C1 - LED-Weißlichtquelle mit breitbandiger Anregung - Google Patents

LED-Weißlichtquelle mit breitbandiger Anregung

Info

Publication number
DE19952932C1
DE19952932C1 DE19952932A DE19952932A DE19952932C1 DE 19952932 C1 DE19952932 C1 DE 19952932C1 DE 19952932 A DE19952932 A DE 19952932A DE 19952932 A DE19952932 A DE 19952932A DE 19952932 C1 DE19952932 C1 DE 19952932C1
Authority
DE
Germany
Prior art keywords
led
light source
white light
junctions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19952932A
Other languages
German (de)
English (en)
Inventor
Karl-Heinz Schlereth
Volker Haerle
Norbert Stath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE19952932A priority Critical patent/DE19952932C1/de
Priority to PCT/DE2000/003520 priority patent/WO2001033640A1/de
Priority to JP2001535238A priority patent/JP4681184B2/ja
Priority to TW089122534A priority patent/TW476166B/zh
Application granted granted Critical
Publication of DE19952932C1 publication Critical patent/DE19952932C1/de
Priority to US10/137,885 priority patent/US6734467B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions

Landscapes

  • Led Devices (AREA)
DE19952932A 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung Expired - Lifetime DE19952932C1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19952932A DE19952932C1 (de) 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung
PCT/DE2000/003520 WO2001033640A1 (de) 1999-11-03 2000-10-06 Led-weisslichtquelle mit breitbandiger anregung
JP2001535238A JP4681184B2 (ja) 1999-11-03 2000-10-06 広帯域な励起を有する発光ダイオード白色光源
TW089122534A TW476166B (en) 1999-11-03 2000-10-26 LED white-light source with broad-band excitation
US10/137,885 US6734467B2 (en) 1999-11-03 2002-05-03 LED white light source with broadband excitation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19952932A DE19952932C1 (de) 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung

Publications (1)

Publication Number Publication Date
DE19952932C1 true DE19952932C1 (de) 2001-05-03

Family

ID=7927797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19952932A Expired - Lifetime DE19952932C1 (de) 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung

Country Status (5)

Country Link
US (1) US6734467B2 (enExample)
JP (1) JP4681184B2 (enExample)
DE (1) DE19952932C1 (enExample)
TW (1) TW476166B (enExample)
WO (1) WO2001033640A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214951A1 (de) * 2002-04-04 2003-05-22 G L I Global Light Ind Gmbh Lichtabstrahlendes Halbleiterbauelement
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
WO2009099423A3 (en) * 2008-02-01 2009-10-01 Cree, Inc. Semiconductor light emitting devices with high color rendering
WO2014184136A1 (de) * 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung

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US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
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US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
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WO2003012884A1 (en) * 2001-08-01 2003-02-13 Nam-Young Kim Display system
WO2003017320A1 (en) * 2001-08-21 2003-02-27 Nam-Young Kim Lamp utilizing a light emitted diode
US6970512B2 (en) * 2001-08-28 2005-11-29 Sbc Technology Resources, Inc. Method and system to improve the transport of compressed video data
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6806658B2 (en) * 2003-03-07 2004-10-19 Agilent Technologies, Inc. Method for making an LED
EP1620903B1 (en) * 2003-04-30 2017-08-16 Cree, Inc. High-power solid state light emitter package
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
CN100477256C (zh) * 2003-06-24 2009-04-08 吉尔科有限公司 用于led芯片的白光生成的全光谱荧光体混合物
JP5456233B2 (ja) 2003-06-24 2014-03-26 ジーイー ライティング ソリューションズ エルエルシー Ｌｅｄチップによる白色光発生のためのフルスペクトル蛍光体混合物
JP4699681B2 (ja) * 2003-06-27 2011-06-15 パナソニック株式会社 Ｌｅｄモジュール、および照明装置
TW200525779A (en) * 2004-01-27 2005-08-01 Super Nova Optoelectronics Corp White-like light emitting device and its manufacturing method
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
BRPI0510707B1 (pt) 2004-05-05 2018-09-25 Rensselaer Polytech Inst aparelho emissor de luz
US7837348B2 (en) 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2008506011A (ja) * 2004-07-06 2008-02-28 サーノフ コーポレーション 効率的な緑色発光蛍光体、及び赤色発光蛍光体との組合せ
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JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214951A1 (de) * 2002-04-04 2003-05-22 G L I Global Light Ind Gmbh Lichtabstrahlendes Halbleiterbauelement
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
WO2009099423A3 (en) * 2008-02-01 2009-10-01 Cree, Inc. Semiconductor light emitting devices with high color rendering
US8178888B2 (en) 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
WO2014184136A1 (de) * 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung
US9543471B2 (en) 2013-05-14 2017-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the production thereof

Also Published As

Publication number Publication date
TW476166B (en) 2002-02-11
JP2003513474A (ja) 2003-04-08
JP4681184B2 (ja) 2011-05-11
US20020167014A1 (en) 2002-11-14
WO2001033640A1 (de) 2001-05-10
US6734467B2 (en) 2004-05-11

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