JP4681184B2 - 広帯域な励起を有する発光ダイオード白色光源 - Google Patents
広帯域な励起を有する発光ダイオード白色光源 Download PDFInfo
- Publication number
- JP4681184B2 JP4681184B2 JP2001535238A JP2001535238A JP4681184B2 JP 4681184 B2 JP4681184 B2 JP 4681184B2 JP 2001535238 A JP2001535238 A JP 2001535238A JP 2001535238 A JP2001535238 A JP 2001535238A JP 4681184 B2 JP4681184 B2 JP 4681184B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light source
- white light
- emitting diode
- source according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19952932.9 | 1999-11-03 | ||
| DE19952932A DE19952932C1 (de) | 1999-11-03 | 1999-11-03 | LED-Weißlichtquelle mit breitbandiger Anregung |
| PCT/DE2000/003520 WO2001033640A1 (de) | 1999-11-03 | 2000-10-06 | Led-weisslichtquelle mit breitbandiger anregung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003513474A JP2003513474A (ja) | 2003-04-08 |
| JP2003513474A5 JP2003513474A5 (enExample) | 2011-01-13 |
| JP4681184B2 true JP4681184B2 (ja) | 2011-05-11 |
Family
ID=7927797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001535238A Expired - Lifetime JP4681184B2 (ja) | 1999-11-03 | 2000-10-06 | 広帯域な励起を有する発光ダイオード白色光源 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6734467B2 (enExample) |
| JP (1) | JP4681184B2 (enExample) |
| DE (1) | DE19952932C1 (enExample) |
| TW (1) | TW476166B (enExample) |
| WO (1) | WO2001033640A1 (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3404064B2 (ja) * | 1993-03-09 | 2003-05-06 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
| GB2366074A (en) * | 2000-02-15 | 2002-02-27 | Hassan Paddy Abdel Salam | LED light source with two vertically-stacked LEDs of different colours |
| US7768210B2 (en) * | 1999-12-22 | 2010-08-03 | General Electric Company | Hybrid electroluminescent devices |
| AUPQ818100A0 (en) * | 2000-06-15 | 2000-07-06 | Arlec Australia Limited | Led lamp |
| US7320632B2 (en) | 2000-06-15 | 2008-01-22 | Lednium Pty Limited | Method of producing a lamp |
| WO2003012884A1 (en) * | 2001-08-01 | 2003-02-13 | Nam-Young Kim | Display system |
| WO2003017320A1 (en) * | 2001-08-21 | 2003-02-27 | Nam-Young Kim | Lamp utilizing a light emitted diode |
| US6970512B2 (en) | 2001-08-28 | 2005-11-29 | Sbc Technology Resources, Inc. | Method and system to improve the transport of compressed video data |
| JP4307113B2 (ja) * | 2002-03-19 | 2009-08-05 | 宣彦 澤木 | 半導体発光素子およびその製造方法 |
| DE10214951A1 (de) * | 2002-04-04 | 2003-05-22 | G L I Global Light Ind Gmbh | Lichtabstrahlendes Halbleiterbauelement |
| US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| US6822991B2 (en) * | 2002-09-30 | 2004-11-23 | Lumileds Lighting U.S., Llc | Light emitting devices including tunnel junctions |
| US6806658B2 (en) * | 2003-03-07 | 2004-10-19 | Agilent Technologies, Inc. | Method for making an LED |
| EP1620903B1 (en) * | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
| US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| CN100477256C (zh) * | 2003-06-24 | 2009-04-08 | 吉尔科有限公司 | 用于led芯片的白光生成的全光谱荧光体混合物 |
| US7906790B2 (en) * | 2003-06-24 | 2011-03-15 | GE Lighting Solutions, LLC | Full spectrum phosphor blends for white light generation with LED chips |
| JP4699681B2 (ja) * | 2003-06-27 | 2011-06-15 | パナソニック株式会社 | Ledモジュール、および照明装置 |
| TW200525779A (en) * | 2004-01-27 | 2005-08-01 | Super Nova Optoelectronics Corp | White-like light emitting device and its manufacturing method |
| DE102004004765A1 (de) * | 2004-01-29 | 2005-09-01 | Rwe Space Solar Power Gmbh | Aktive Zonen aufweisende Halbleiterstruktur |
| DE102005020695B4 (de) * | 2004-04-30 | 2006-06-22 | Optotransmitter-Umweltschutz-Technologie E.V. | Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft |
| US7837348B2 (en) | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
| CN1981157B (zh) * | 2004-05-05 | 2011-03-16 | 伦斯勒工业学院 | 使用固态发射器和降频转换材料的高效光源 |
| US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| US7427366B2 (en) * | 2004-07-06 | 2008-09-23 | Sarnoff Corporation | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
| US20060012289A1 (en) * | 2004-07-19 | 2006-01-19 | General Electric Company | Hybrid electroluminescent devices |
| US7323721B2 (en) * | 2004-09-09 | 2008-01-29 | Blue Photonics Inc. | Monolithic multi-color, multi-quantum well semiconductor LED |
| US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
| US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| TWI247439B (en) * | 2004-12-17 | 2006-01-11 | Genesis Photonics Inc | Light-emitting diode device |
| CN1684279A (zh) * | 2005-02-25 | 2005-10-19 | 炬鑫科技股份有限公司 | 发光元件 |
| FR2883653B1 (fr) * | 2005-03-22 | 2007-05-25 | Gemplus Sa | Module electronique et carte a puce avec indicateur lumineux |
| US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
| US7690167B2 (en) * | 2005-04-28 | 2010-04-06 | Antonic James P | Structural support framing assembly |
| TWM279023U (en) * | 2005-04-29 | 2005-10-21 | Super Nova Optoelectronics Cor | White light emitting diode device |
| CN100508223C (zh) * | 2005-05-24 | 2009-07-01 | 新世纪光电股份有限公司 | 二极管发光装置 |
| CN100508224C (zh) * | 2005-06-13 | 2009-07-01 | 新世纪光电股份有限公司 | 具有发光二极管的白光装置 |
| JP2008544553A (ja) * | 2005-06-23 | 2008-12-04 | レンセレイアー ポリテクニック インスティテュート | 短波長ledとダウンコンバージョン物質で白色光を生成するパッケージ設計 |
| JP5285835B2 (ja) * | 2005-07-13 | 2013-09-11 | 株式会社東芝 | 半導体素子およびその製造方法 |
| EP1958257A2 (en) * | 2005-11-24 | 2008-08-20 | Koninklijke Philips Electronics N.V. | Light emitting diode construction |
| US20070125984A1 (en) * | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
| US8906262B2 (en) * | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
| US7614759B2 (en) | 2005-12-22 | 2009-11-10 | Cree Led Lighting Solutions, Inc. | Lighting device |
| US20070145879A1 (en) * | 2005-12-22 | 2007-06-28 | Abramov Vladimir S | Light emitting halogen-silicate photophosphor compositions and systems |
| JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
| JP2007266579A (ja) * | 2006-02-28 | 2007-10-11 | Toshiba Lighting & Technology Corp | 発光装置 |
| JP2007281257A (ja) * | 2006-04-07 | 2007-10-25 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
| JP2009534866A (ja) | 2006-04-24 | 2009-09-24 | クリー, インコーポレイティッド | 横向き平面実装白色led |
| US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
| US7863634B2 (en) * | 2006-06-12 | 2011-01-04 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and reflector |
| CN102403439A (zh) * | 2006-06-12 | 2012-04-04 | 3M创新有限公司 | 具有再发光半导体构造和会聚光学元件的led装置 |
| US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
| US7703942B2 (en) * | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
| US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
| EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
| JP2010506006A (ja) * | 2006-10-03 | 2010-02-25 | ライトスケイプ マテリアルズ,インク. | 金属ケイ酸塩ハロゲン化物燐光体及びそれを使用するled照明デバイス |
| US7889421B2 (en) | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
| US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US20090159915A1 (en) * | 2007-12-19 | 2009-06-25 | Shaul Branchevsky | Led insert module and multi-layer lens |
| US8178888B2 (en) | 2008-02-01 | 2012-05-15 | Cree, Inc. | Semiconductor light emitting devices with high color rendering |
| WO2009100358A1 (en) | 2008-02-08 | 2009-08-13 | Illumitex, Inc. | System and method for emitter layer shaping |
| CN101999169B (zh) | 2008-02-15 | 2013-12-25 | 克里公司 | 用于提供白色光输出的宽带发光器件灯 |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
| US9331252B2 (en) * | 2011-08-23 | 2016-05-03 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
| CN104160212B (zh) * | 2012-03-01 | 2018-10-12 | 飞利浦灯具控股公司 | Led照明布置 |
| FR3004005B1 (fr) * | 2013-03-28 | 2016-11-25 | Commissariat Energie Atomique | Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique |
| DE102013104954A1 (de) | 2013-05-14 | 2014-11-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| US9601656B1 (en) * | 2014-06-13 | 2017-03-21 | Silego Technology, Inc. | Method of manufacturing low cost, high efficiency LED |
| US10054485B2 (en) | 2016-03-17 | 2018-08-21 | Raytheon Company | UV LED-phosphor based hyperspectral calibrator |
| US10371325B1 (en) * | 2018-06-25 | 2019-08-06 | Intematix Corporation | Full spectrum white light emitting devices |
| JP7101347B2 (ja) | 2019-12-27 | 2022-07-15 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102585A (enExample) * | 1972-04-04 | 1973-12-22 | ||
| FR2248663B1 (enExample) * | 1972-12-13 | 1978-08-11 | Radiotechnique Compelec | |
| DE3804293A1 (de) * | 1988-02-12 | 1989-08-24 | Philips Patentverwaltung | Anordnung mit einer elektrolumineszenz- oder laserdiode |
| JPH0710003B2 (ja) * | 1988-03-11 | 1995-02-01 | 信越半導体株式会社 | 混色発光半導体素子 |
| JP3649748B2 (ja) * | 1993-03-22 | 2005-05-18 | 三洋電機株式会社 | 発光ダイオードランプ |
| JPH08335718A (ja) * | 1995-06-08 | 1996-12-17 | Daido Steel Co Ltd | 発光ダイオード |
| DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| JP3543498B2 (ja) * | 1996-06-28 | 2004-07-14 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
| US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
| DE29914941U1 (de) * | 1999-08-26 | 1999-11-25 | Everlight Electronics Co., Ltd., Tucheng, Taipeh | Mit LED's arbeitende Farb-Mischvorrichtung |
| JP3511993B2 (ja) * | 1999-10-25 | 2004-03-29 | 日亜化学工業株式会社 | 発光装置 |
-
1999
- 1999-11-03 DE DE19952932A patent/DE19952932C1/de not_active Expired - Lifetime
-
2000
- 2000-10-06 JP JP2001535238A patent/JP4681184B2/ja not_active Expired - Lifetime
- 2000-10-06 WO PCT/DE2000/003520 patent/WO2001033640A1/de not_active Ceased
- 2000-10-26 TW TW089122534A patent/TW476166B/zh not_active IP Right Cessation
-
2002
- 2002-05-03 US US10/137,885 patent/US6734467B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW476166B (en) | 2002-02-11 |
| US6734467B2 (en) | 2004-05-11 |
| WO2001033640A1 (de) | 2001-05-10 |
| US20020167014A1 (en) | 2002-11-14 |
| DE19952932C1 (de) | 2001-05-03 |
| JP2003513474A (ja) | 2003-04-08 |
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