DE19940320B4 - Nicht reflektierende Beschichtungspolymere und Verfahren zu deren Herstellung - Google Patents

Nicht reflektierende Beschichtungspolymere und Verfahren zu deren Herstellung Download PDF

Info

Publication number
DE19940320B4
DE19940320B4 DE19940320A DE19940320A DE19940320B4 DE 19940320 B4 DE19940320 B4 DE 19940320B4 DE 19940320 A DE19940320 A DE 19940320A DE 19940320 A DE19940320 A DE 19940320A DE 19940320 B4 DE19940320 B4 DE 19940320B4
Authority
DE
Germany
Prior art keywords
formula
acid
derivatives
alkyl
anthracene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19940320A
Other languages
German (de)
English (en)
Other versions
DE19940320A1 (de
Inventor
Sung-eun Seongnam Hong
Min-ho Yicheon Jung
Hyeong-Soo Yicheon Kim
Ki-Ho Yicheon Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE19940320A1 publication Critical patent/DE19940320A1/de
Application granted granted Critical
Publication of DE19940320B4 publication Critical patent/DE19940320B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/34—Introducing sulfur atoms or sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
DE19940320A 1998-12-31 1999-08-25 Nicht reflektierende Beschichtungspolymere und Verfahren zu deren Herstellung Expired - Fee Related DE19940320B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR98-63695 1998-12-31
KR10-1998-0063695A KR100363695B1 (ko) 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법

Publications (2)

Publication Number Publication Date
DE19940320A1 DE19940320A1 (de) 2000-07-06
DE19940320B4 true DE19940320B4 (de) 2006-09-21

Family

ID=19570257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19940320A Expired - Fee Related DE19940320B4 (de) 1998-12-31 1999-08-25 Nicht reflektierende Beschichtungspolymere und Verfahren zu deren Herstellung

Country Status (10)

Country Link
US (2) US6350818B1 (US06350818-20020226-C00017.png)
JP (2) JP4253088B2 (US06350818-20020226-C00017.png)
KR (1) KR100363695B1 (US06350818-20020226-C00017.png)
CN (1) CN1166704C (US06350818-20020226-C00017.png)
DE (1) DE19940320B4 (US06350818-20020226-C00017.png)
FR (1) FR2788060B1 (US06350818-20020226-C00017.png)
GB (1) GB2345289B (US06350818-20020226-C00017.png)
IT (1) IT1308658B1 (US06350818-20020226-C00017.png)
NL (1) NL1012840C2 (US06350818-20020226-C00017.png)
TW (1) TWI227259B (US06350818-20020226-C00017.png)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003502449A (ja) * 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
KR100557606B1 (ko) * 1999-08-31 2006-03-10 주식회사 하이닉스반도체 유기 난반사 방지용 중합체
KR100427440B1 (ko) * 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
US7132219B2 (en) * 2001-02-02 2006-11-07 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
KR100465866B1 (ko) * 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
JP4381143B2 (ja) * 2001-11-15 2009-12-09 ハネウェル・インターナショナル・インコーポレーテッド フォトリソグラフィー用スピンオン反射防止膜
US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
EP1543549A1 (en) * 2002-09-20 2005-06-22 Honeywell International, Inc. Interlayer adhesion promoter for low k materials
US7056826B2 (en) * 2003-01-07 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming copper interconnects
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7078336B2 (en) * 2003-11-19 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
JP4720988B2 (ja) * 2005-07-11 2011-07-13 日産化学工業株式会社 フルオレン構造を有する化合物を含むリソグラフィー用下層膜形成組成物
KR100671114B1 (ko) 2005-07-28 2007-01-17 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
US7419611B2 (en) * 2005-09-02 2008-09-02 International Business Machines Corporation Processes and materials for step and flash imprint lithography
US7488771B2 (en) * 2005-09-02 2009-02-10 International Business Machines Corporation Stabilization of vinyl ether materials
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP4952906B2 (ja) * 2006-11-15 2012-06-13 ソニーケミカル＆インフォメーションデバイス株式会社 封止樹脂組成物及び発光素子
US8642246B2 (en) * 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5099140B2 (ja) * 2007-08-24 2012-12-12 東レ株式会社 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
CN101971102B (zh) 2008-01-29 2012-12-12 布鲁尔科技公司 用来通过多次暗视场曝光对硬掩模进行图案化的在线法
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5842503B2 (ja) * 2010-09-29 2016-01-13 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法
KR101811064B1 (ko) 2010-09-29 2017-12-20 제이에스알 가부시끼가이샤 패턴형성 방법, 레지스트 하층막의 형성 방법, 레지스트 하층막 형성용 조성물 및 레지스트 하층막
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101993480B1 (ko) * 2011-12-16 2019-06-26 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 수지 조성물, 레지스트 하층막, 그의 형성 방법 및 패턴 형성 방법
JP6160068B2 (ja) * 2011-12-16 2017-07-12 Jsr株式会社 レジスト下層膜形成用樹脂組成物、レジスト下層膜、その形成方法及びパターン形成方法
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
CN107797384B (zh) * 2016-09-07 2020-10-09 上海飞凯电子材料有限公司 一种感光树脂、正性光刻胶及应用
CN117820910A (zh) * 2022-06-30 2024-04-05 华为技术有限公司 涂层材料和集成电路及制备方法、电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2262329A1 (US06350818-20020226-C00017.png) * 1974-02-21 1975-09-19 Fuji Photo Film Co Ltd
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
EP0196999A2 (de) * 1985-03-02 1986-10-08 Ciba-Geigy Ag Modifizierte Phenolharze
US5525457A (en) * 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822718A (en) 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
US5674648A (en) 1984-08-06 1997-10-07 Brewer Science, Inc. Anti-reflective coating
GB8430377D0 (en) * 1984-12-01 1985-01-09 Ciba Geigy Ag Modified phenolic resins
JP2740837B2 (ja) * 1987-01-30 1998-04-15 コニカ株式会社 多色転写画像形成方法
JPH0210346A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd パターン形成材料
CA2041434A1 (en) * 1990-05-02 1991-11-03 Teijiro Kitao Resist composition
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
DE4106356A1 (de) * 1991-02-28 1992-09-03 Hoechst Ag Strahlungsempfindliche polymere mit naphthochinon-2-diazid-4-sulfonyl-gruppen und deren verwendung in einem positiv arbeitenden aufzeichnungsmaterial
JPH05188588A (ja) * 1992-01-08 1993-07-30 Konica Corp 感光性平版印刷版
JP3192548B2 (ja) * 1994-04-22 2001-07-30 東京応化工業株式会社 ポジ型ホトレジスト組成物
US6669995B1 (en) * 1994-10-12 2003-12-30 Linda Insalaco Method of treating an anti-reflective coating on a substrate
GB9426206D0 (en) * 1994-12-23 1995-02-22 Horsell Plc Lithographic plate
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
US5719004A (en) * 1996-08-07 1998-02-17 Clariant Finance (Bvi) Limited Positive photoresist composition containing a 2,4-dinitro-1-naphthol
JP3823449B2 (ja) * 1997-06-16 2006-09-20 住友化学株式会社 フォトレジスト組成物
TW457403B (en) 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2262329A1 (US06350818-20020226-C00017.png) * 1974-02-21 1975-09-19 Fuji Photo Film Co Ltd
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
EP0196999A2 (de) * 1985-03-02 1986-10-08 Ciba-Geigy Ag Modifizierte Phenolharze
US5525457A (en) * 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Tetrahedorn (1992), 48 (42), 9207-16 zit. als HCAPLUS Abstr. AN:1993:38553 *

Also Published As

Publication number Publication date
DE19940320A1 (de) 2000-07-06
IT1308658B1 (it) 2002-01-09
US20020120070A1 (en) 2002-08-29
ITTO991027A1 (it) 2001-05-24
US6492441B2 (en) 2002-12-10
CN1260355A (zh) 2000-07-19
CN1166704C (zh) 2004-09-15
NL1012840A1 (nl) 2000-07-03
FR2788060A1 (fr) 2000-07-07
US6350818B1 (en) 2002-02-26
GB2345289B (en) 2003-03-26
TWI227259B (en) 2005-02-01
ITTO991027A0 (it) 1999-11-24
JP4253088B2 (ja) 2009-04-08
KR20010016643A (ko) 2001-03-05
KR100363695B1 (ko) 2003-04-11
GB2345289A (en) 2000-07-05
NL1012840C2 (nl) 2001-06-07
JP2000204115A (ja) 2000-07-25
JP2007231270A (ja) 2007-09-13
GB9917218D0 (en) 1999-09-22
FR2788060B1 (fr) 2003-10-17

Similar Documents

Publication Publication Date Title
DE19940320B4 (de) Nicht reflektierende Beschichtungspolymere und Verfahren zu deren Herstellung
DE19964382B4 (de) Verwendung einer Beschichtungszusammensetzung zur Herstellung einer nicht reflektierenden Beschichtung und Verfahren zur Herstellung der Beschichtungszusammensetzung
DE69726542T2 (de) Chemisch verstärkte Resistzusammensetzung
EP0297443B1 (de) Strahlungsempfindliches Gemisch für lichtempfindliche Beschichtungsmaterialien
DE69930832T2 (de) Benutzung einer zusammensetzung für eine antireflexunterschicht
DE19912047B4 (de) Resistzusammensetzung des Negativtyps
DE19962663A1 (de) Organisches, nicht reflektierendes Beschichtungsmaterial und dessen Herstellung
DE19721694B4 (de) N-Vinyllactamderivate enthaltende Copolymere, Herstellungsverfahren hierfür und hieraus hergestellte Photoresists
DE19919795A1 (de) Polymer und dessen Verwendung in einem Verfahren zur Bildung eines Mikromusters
DE19956531A1 (de) Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung
DE3720017C2 (US06350818-20020226-C00017.png)
DE112004000021T5 (de) Positiv-Photoresist-Zusammensetzung vom chemisch verstärkten Typ und Methode zur Bildung eines Resistmusters
DE10028345A1 (de) Organisches,nicht-reflektierendes Polymer und Verfahren zu dessen Herstellung
EP0349803B1 (de) Strahlungshärtbares Gemisch und daraus hergestelltes strahlungsempfindliches Aufzeichnungsmaterial für hochenergetische Strahlung
DE3810247C2 (US06350818-20020226-C00017.png)
DE3723411C2 (US06350818-20020226-C00017.png)
EP0176871A2 (de) Verfahren zur Herstellung eines Photoresists
DE69837984T2 (de) Gefärbte Fotolacke sowie Methoden und Artikel, die diese umfassen
DE3219438A1 (de) Lichtempfindlicher koerper
DE10063263A1 (de) Organisches nicht reflektierendes Beschichtungspolymer und dessen Herstellungsverfahren
DE4207264B4 (de) Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
DE3839906A1 (de) Positiv arbeitende lichtempfindliche zusammensetzung, verfahren zu ihrer herstellung und ihre verwendung
DE3726858A1 (de) Organosiliciumpolymere enthaltendes photoresistmaterial
DE10118976B4 (de) Photoresist-Zusammensetzung für ein Resist-Fließverfahren und Verfahren zur Bildung eines Kontaktlochs unter Verwendung desselben
EP0528203B1 (de) Strahlungsempfindliches Gemisch mit einem polymeren Bindemittel mit Einheiten aus alpha,beta-ungesättigten Carbonsäureamiden

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: C08F21214

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee