DE19914243A1 - Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff - Google Patents

Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff

Info

Publication number
DE19914243A1
DE19914243A1 DE19914243A DE19914243A DE19914243A1 DE 19914243 A1 DE19914243 A1 DE 19914243A1 DE 19914243 A DE19914243 A DE 19914243A DE 19914243 A DE19914243 A DE 19914243A DE 19914243 A1 DE19914243 A1 DE 19914243A1
Authority
DE
Germany
Prior art keywords
hydrogen fluoride
solution
purity
gaseous
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19914243A
Other languages
German (de)
English (en)
Inventor
Wolfgang Sievert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Specialty Chemicals Seelze GmbH
Original Assignee
Riedel de Haen GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Riedel de Haen GmbH filed Critical Riedel de Haen GmbH
Priority to DE19914243A priority Critical patent/DE19914243A1/de
Priority to MXPA01009861A priority patent/MXPA01009861A/es
Priority to IL14562300A priority patent/IL145623A0/xx
Priority to KR1020017012480A priority patent/KR100742575B1/ko
Priority to AU42913/00A priority patent/AU4291300A/en
Priority to BR0009387-4A priority patent/BR0009387A/pt
Priority to CA002368441A priority patent/CA2368441A1/en
Priority to AT00922565T priority patent/ATE321009T1/de
Priority to HK02107547.1A priority patent/HK1045977A1/zh
Priority to PCT/EP2000/002763 priority patent/WO2000058208A2/de
Priority to EP00922565A priority patent/EP1171379B1/de
Priority to CNB008058881A priority patent/CN1319851C/zh
Priority to JP2000607921A priority patent/JP4084929B2/ja
Priority to DE50012445T priority patent/DE50012445D1/de
Publication of DE19914243A1 publication Critical patent/DE19914243A1/de
Priority to US10/455,067 priority patent/US8153095B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/09—Bromine; Hydrogen bromide
    • C01B7/093—Hydrogen bromide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Gas Separation By Absorption (AREA)
  • ing And Chemical Polishing (AREA)
DE19914243A 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff Ceased DE19914243A1 (de)

Priority Applications (15)

Application Number Priority Date Filing Date Title
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff
AT00922565T ATE321009T1 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff
HK02107547.1A HK1045977A1 (zh) 1999-03-29 2000-03-29 使用氣態氟化氫製備高純溶液的方法
KR1020017012480A KR100742575B1 (ko) 1999-03-29 2000-03-29 기체 플루오르화수소를 사용한 고순도 용액의 제조 방법
AU42913/00A AU4291300A (en) 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride
BR0009387-4A BR0009387A (pt) 1999-03-29 2000-03-29 Processo para produção de soluções de alta pureza sob uso de fluoreto de hidrogênio gasoso
CA002368441A CA2368441A1 (en) 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride
MXPA01009861A MXPA01009861A (es) 1999-03-29 2000-03-29 Metodo para producir soluciones altamente puras usando floruro de hidrogeno gaseoso.
IL14562300A IL145623A0 (en) 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride
PCT/EP2000/002763 WO2000058208A2 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff
EP00922565A EP1171379B1 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff
CNB008058881A CN1319851C (zh) 1999-03-29 2000-03-29 使用气态氟化氢制备高纯溶液的方法
JP2000607921A JP4084929B2 (ja) 1999-03-29 2000-03-29 フッ化水素ガスを用いる高純度溶液の調製方法
DE50012445T DE50012445D1 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff
US10/455,067 US8153095B2 (en) 1999-03-29 2003-06-05 Method for producing highly pure solutions using gaseous hydrogen fluoride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff

Publications (1)

Publication Number Publication Date
DE19914243A1 true DE19914243A1 (de) 2000-10-05

Family

ID=7902836

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19914243A Ceased DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff
DE50012445T Expired - Lifetime DE50012445D1 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50012445T Expired - Lifetime DE50012445D1 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff

Country Status (13)

Country Link
EP (1) EP1171379B1 (enExample)
JP (1) JP4084929B2 (enExample)
KR (1) KR100742575B1 (enExample)
CN (1) CN1319851C (enExample)
AT (1) ATE321009T1 (enExample)
AU (1) AU4291300A (enExample)
BR (1) BR0009387A (enExample)
CA (1) CA2368441A1 (enExample)
DE (2) DE19914243A1 (enExample)
HK (1) HK1045977A1 (enExample)
IL (1) IL145623A0 (enExample)
MX (1) MXPA01009861A (enExample)
WO (1) WO2000058208A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003104144A1 (en) * 2002-06-05 2003-12-18 Honeywell International Inc. Method for producing highly pure anhydrous solutions containing hydrogen fluoride
WO2004108592A1 (en) * 2003-06-05 2004-12-16 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
EP1538664A4 (en) * 2002-09-13 2007-04-04 Daikin Ind Ltd MEDICAMENTS AND METHODS OF PROCESSING

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
CN1326771C (zh) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 碘化铵的生产方法
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法
CN111790520B (zh) * 2019-08-05 2021-05-11 潍坊奇为新材料科技有限公司 一种用于高梯度磁选分选腔的导磁介质

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
DE1667673A1 (de) * 1966-03-11 1971-07-22 Pechiney Saint Gobain Kontinuierliches Verfahren zur Extraktion von Fluorwasserstoff aus beliebigen Gasgemischen
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure
CH665828A5 (de) * 1985-05-10 1988-06-15 Dow Chemical Co Wasserstofffluorid-rueckgewinnungsverfahren.

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
CA2141492C (en) * 1994-04-28 1999-07-27 Bruce B. Randolph Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
TW434196B (en) * 1997-06-25 2001-05-16 Ibm Selective etching of silicate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
DE1667673A1 (de) * 1966-03-11 1971-07-22 Pechiney Saint Gobain Kontinuierliches Verfahren zur Extraktion von Fluorwasserstoff aus beliebigen Gasgemischen
CH665828A5 (de) * 1985-05-10 1988-06-15 Dow Chemical Co Wasserstofffluorid-rueckgewinnungsverfahren.
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
WO2003104144A1 (en) * 2002-06-05 2003-12-18 Honeywell International Inc. Method for producing highly pure anhydrous solutions containing hydrogen fluoride
EP1538664A4 (en) * 2002-09-13 2007-04-04 Daikin Ind Ltd MEDICAMENTS AND METHODS OF PROCESSING
WO2004108592A1 (en) * 2003-06-05 2004-12-16 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride

Also Published As

Publication number Publication date
CN1346331A (zh) 2002-04-24
AU4291300A (en) 2000-10-16
BR0009387A (pt) 2002-01-29
ATE321009T1 (de) 2006-04-15
WO2000058208A2 (de) 2000-10-05
HK1045977A1 (zh) 2002-12-20
CN1319851C (zh) 2007-06-06
KR100742575B1 (ko) 2007-08-02
JP2002540257A (ja) 2002-11-26
MXPA01009861A (es) 2003-06-24
EP1171379B1 (de) 2006-03-22
JP4084929B2 (ja) 2008-04-30
WO2000058208A3 (de) 2001-04-26
EP1171379A2 (de) 2002-01-16
KR20020024577A (ko) 2002-03-30
DE50012445D1 (de) 2006-07-13
CA2368441A1 (en) 2000-10-05
IL145623A0 (en) 2002-06-30

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection