JP4084929B2 - フッ化水素ガスを用いる高純度溶液の調製方法 - Google Patents

フッ化水素ガスを用いる高純度溶液の調製方法 Download PDF

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Publication number
JP4084929B2
JP4084929B2 JP2000607921A JP2000607921A JP4084929B2 JP 4084929 B2 JP4084929 B2 JP 4084929B2 JP 2000607921 A JP2000607921 A JP 2000607921A JP 2000607921 A JP2000607921 A JP 2000607921A JP 4084929 B2 JP4084929 B2 JP 4084929B2
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Japan
Prior art keywords
hydrogen fluoride
gas
water
purity
solution
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2000607921A
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English (en)
Japanese (ja)
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JP2002540257A (ja
JP2002540257A5 (enExample
Inventor
ジーヴェルト，ヴォルフガング
Original Assignee
ハネウェル・スペシャルティ・ケミカルズ・ゼールツェ・ゲーエムベーハー
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Publication of JP2002540257A publication Critical patent/JP2002540257A/ja
Publication of JP2002540257A5 publication Critical patent/JP2002540257A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/09—Bromine; Hydrogen bromide
    • C01B7/093—Hydrogen bromide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • ing And Chemical Polishing (AREA)
  • Gas Separation By Absorption (AREA)
JP2000607921A 1999-03-29 2000-03-29 フッ化水素ガスを用いる高純度溶液の調製方法 Expired - Fee Related JP4084929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff
DE19914243.2 1999-03-29
PCT/EP2000/002763 WO2000058208A2 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff

Publications (3)

Publication Number Publication Date
JP2002540257A JP2002540257A (ja) 2002-11-26
JP2002540257A5 JP2002540257A5 (enExample) 2006-01-05
JP4084929B2 true JP4084929B2 (ja) 2008-04-30

Family

ID=7902836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000607921A Expired - Fee Related JP4084929B2 (ja) 1999-03-29 2000-03-29 フッ化水素ガスを用いる高純度溶液の調製方法

Country Status (13)

Country Link
EP (1) EP1171379B1 (enExample)
JP (1) JP4084929B2 (enExample)
KR (1) KR100742575B1 (enExample)
CN (1) CN1319851C (enExample)
AT (1) ATE321009T1 (enExample)
AU (1) AU4291300A (enExample)
BR (1) BR0009387A (enExample)
CA (1) CA2368441A1 (enExample)
DE (2) DE19914243A1 (enExample)
HK (1) HK1045977A1 (enExample)
IL (1) IL145623A0 (enExample)
MX (1) MXPA01009861A (enExample)
WO (1) WO2000058208A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) * 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
KR20050005541A (ko) * 2002-06-05 2005-01-13 허니웰 인터내셔널 인코포레이티드 하이드로겐 플루오라이드를 함유하는 고순도 무수 용액제조방법
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CN1326771C (zh) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 碘化铵的生产方法
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法
CN110369126B (zh) * 2019-08-05 2020-06-23 潍坊奇为新材料科技有限公司 一种高饱和磁通量导磁介质

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
FR1477742A (fr) * 1966-03-11 1967-04-21 Pechiney Saint Gobain Procédé d'extraction et de concentration de l'acide fluorhydrique gazeux par des solvants aminés
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4629610A (en) * 1985-05-10 1986-12-16 Dow Chemical Co. Hydrogen fluoride recovery process
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
CA2141492C (en) * 1994-04-28 1999-07-27 Bruce B. Randolph Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
TW434196B (en) * 1997-06-25 2001-05-16 Ibm Selective etching of silicate

Also Published As

Publication number Publication date
WO2000058208A2 (de) 2000-10-05
CN1319851C (zh) 2007-06-06
ATE321009T1 (de) 2006-04-15
WO2000058208A3 (de) 2001-04-26
HK1045977A1 (zh) 2002-12-20
JP2002540257A (ja) 2002-11-26
BR0009387A (pt) 2002-01-29
EP1171379B1 (de) 2006-03-22
DE19914243A1 (de) 2000-10-05
KR20020024577A (ko) 2002-03-30
CA2368441A1 (en) 2000-10-05
MXPA01009861A (es) 2003-06-24
EP1171379A2 (de) 2002-01-16
KR100742575B1 (ko) 2007-08-02
AU4291300A (en) 2000-10-16
CN1346331A (zh) 2002-04-24
IL145623A0 (en) 2002-06-30
DE50012445D1 (de) 2006-07-13

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