AU4291300A - Method for producing high-purity solutions using gaseous hydrogen fluoride - Google Patents

Method for producing high-purity solutions using gaseous hydrogen fluoride

Info

Publication number
AU4291300A
AU4291300A AU42913/00A AU4291300A AU4291300A AU 4291300 A AU4291300 A AU 4291300A AU 42913/00 A AU42913/00 A AU 42913/00A AU 4291300 A AU4291300 A AU 4291300A AU 4291300 A AU4291300 A AU 4291300A
Authority
AU
Australia
Prior art keywords
hydrogen fluoride
producing high
gaseous hydrogen
purity solutions
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU42913/00A
Inventor
Wolfgang Sievert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Specialty Chemicals Seelze GmbH
Original Assignee
Honeywell Specialty Chemicals Seelze GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Specialty Chemicals Seelze GmbH filed Critical Honeywell Specialty Chemicals Seelze GmbH
Publication of AU4291300A publication Critical patent/AU4291300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/09—Bromine; Hydrogen bromide
    • C01B7/093—Hydrogen bromide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Gas Separation By Absorption (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The invention relates to a method for producing a high-purity solution that contains hydrogen fluoride or a salt thereof or a mixture of two or more thereof. The inventive method comprises the following step (i): hydrogen fluoride is passed into at least one anhydrous solvant. The method is characterised in that hydrogen fluoride is passed into the at least one anhydrous solvant as a gas or liquid gas or as a mixture of gas and liquid gas.
AU42913/00A 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride Abandoned AU4291300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19914243 1999-03-29
DE19914243A DE19914243A1 (en) 1999-03-29 1999-03-29 Process for the preparation of high-purity solutions using gaseous hydrogen fluoride
PCT/EP2000/002763 WO2000058208A2 (en) 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride

Publications (1)

Publication Number Publication Date
AU4291300A true AU4291300A (en) 2000-10-16

Family

ID=7902836

Family Applications (1)

Application Number Title Priority Date Filing Date
AU42913/00A Abandoned AU4291300A (en) 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride

Country Status (13)

Country Link
EP (1) EP1171379B1 (en)
JP (1) JP4084929B2 (en)
KR (1) KR100742575B1 (en)
CN (1) CN1319851C (en)
AT (1) ATE321009T1 (en)
AU (1) AU4291300A (en)
BR (1) BR0009387A (en)
CA (1) CA2368441A1 (en)
DE (2) DE19914243A1 (en)
HK (1) HK1045977A1 (en)
IL (1) IL145623A0 (en)
MX (1) MXPA01009861A (en)
WO (1) WO2000058208A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
AU2003273958A1 (en) * 2002-06-05 2003-12-22 Honeywell International Inc. Method for producing highly pure anhydrous solutions containing hydrogen fluoride
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CN1326771C (en) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 Production method of ammonium iodide
CN102774813A (en) * 2011-05-12 2012-11-14 特力生有限公司 Method for preparing hydrofluoric acid
CN111790520B (en) * 2019-08-05 2021-05-11 潍坊奇为新材料科技有限公司 Magnetic conductive medium for high-gradient magnetic separation chamber

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
FR1477742A (en) * 1966-03-11 1967-04-21 Pechiney Saint Gobain Process for extracting and concentrating gaseous hydrofluoric acid using amino solvents
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4629610A (en) * 1985-05-10 1986-12-16 Dow Chemical Co. Hydrogen fluoride recovery process
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD254373A1 (en) * 1986-12-09 1988-02-24 Nuenchritz Chemie METHOD FOR OBTAINING HIGH-PURITY FLUOROLE ACID ACID
DD281173A5 (en) * 1989-04-04 1990-08-01 Nuenchritz Chemie METHOD FOR THE PRODUCTION OF HIGH-PURITY, CRYSTALLIZED AMMONIUM FLUORIDE
JP2896268B2 (en) * 1992-05-22 1999-05-31 三菱電機株式会社 Semiconductor substrate surface treatment apparatus and control method thereof
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
CA2141492C (en) * 1994-04-28 1999-07-27 Bruce B. Randolph Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
TW434196B (en) * 1997-06-25 2001-05-16 Ibm Selective etching of silicate

Also Published As

Publication number Publication date
ATE321009T1 (en) 2006-04-15
DE19914243A1 (en) 2000-10-05
KR20020024577A (en) 2002-03-30
EP1171379A2 (en) 2002-01-16
KR100742575B1 (en) 2007-08-02
BR0009387A (en) 2002-01-29
EP1171379B1 (en) 2006-03-22
WO2000058208A2 (en) 2000-10-05
JP2002540257A (en) 2002-11-26
IL145623A0 (en) 2002-06-30
CN1346331A (en) 2002-04-24
WO2000058208A3 (en) 2001-04-26
CN1319851C (en) 2007-06-06
MXPA01009861A (en) 2003-06-24
CA2368441A1 (en) 2000-10-05
DE50012445D1 (en) 2006-07-13
JP4084929B2 (en) 2008-04-30
HK1045977A1 (en) 2002-12-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase