JP2002540257A5 - - Google Patents

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Publication number
JP2002540257A5
JP2002540257A5 JP2000607921A JP2000607921A JP2002540257A5 JP 2002540257 A5 JP2002540257 A5 JP 2002540257A5 JP 2000607921 A JP2000607921 A JP 2000607921A JP 2000607921 A JP2000607921 A JP 2000607921A JP 2002540257 A5 JP2002540257 A5 JP 2002540257A5
Authority
JP
Japan
Prior art keywords
high purity
semiconductor
industry
purity solution
electrical industry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000607921A
Other languages
English (en)
Japanese (ja)
Other versions
JP4084929B2 (ja
JP2002540257A (ja
Filing date
Publication date
Priority claimed from DE19914243A external-priority patent/DE19914243A1/de
Application filed filed Critical
Publication of JP2002540257A publication Critical patent/JP2002540257A/ja
Publication of JP2002540257A5 publication Critical patent/JP2002540257A5/ja
Application granted granted Critical
Publication of JP4084929B2 publication Critical patent/JP4084929B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000607921A 1999-03-29 2000-03-29 フッ化水素ガスを用いる高純度溶液の調製方法 Expired - Fee Related JP4084929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19914243.2 1999-03-29
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff
PCT/EP2000/002763 WO2000058208A2 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff

Publications (3)

Publication Number Publication Date
JP2002540257A JP2002540257A (ja) 2002-11-26
JP2002540257A5 true JP2002540257A5 (enExample) 2006-01-05
JP4084929B2 JP4084929B2 (ja) 2008-04-30

Family

ID=7902836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000607921A Expired - Fee Related JP4084929B2 (ja) 1999-03-29 2000-03-29 フッ化水素ガスを用いる高純度溶液の調製方法

Country Status (13)

Country Link
EP (1) EP1171379B1 (enExample)
JP (1) JP4084929B2 (enExample)
KR (1) KR100742575B1 (enExample)
CN (1) CN1319851C (enExample)
AT (1) ATE321009T1 (enExample)
AU (1) AU4291300A (enExample)
BR (1) BR0009387A (enExample)
CA (1) CA2368441A1 (enExample)
DE (2) DE19914243A1 (enExample)
HK (1) HK1045977A1 (enExample)
IL (1) IL145623A0 (enExample)
MX (1) MXPA01009861A (enExample)
WO (1) WO2000058208A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
JP2005528316A (ja) * 2002-06-05 2005-09-22 ハネウェル・インターナショナル・インコーポレーテッド フッ化水素を含有する高純度無水溶液の製造方法
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CN1326771C (zh) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 碘化铵的生产方法
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法
CN111790520B (zh) * 2019-08-05 2021-05-11 潍坊奇为新材料科技有限公司 一种用于高梯度磁选分选腔的导磁介质

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
FR1477742A (fr) * 1966-03-11 1967-04-21 Pechiney Saint Gobain Procédé d'extraction et de concentration de l'acide fluorhydrique gazeux par des solvants aminés
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4629610A (en) * 1985-05-10 1986-12-16 Dow Chemical Co. Hydrogen fluoride recovery process
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
CA2141492C (en) * 1994-04-28 1999-07-27 Bruce B. Randolph Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
TW434196B (en) * 1997-06-25 2001-05-16 Ibm Selective etching of silicate

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