DE19903598A1 - Halbleitervorrichtung mit Mehrfachdielektrikum - Google Patents
Halbleitervorrichtung mit MehrfachdielektrikumInfo
- Publication number
- DE19903598A1 DE19903598A1 DE1999103598 DE19903598A DE19903598A1 DE 19903598 A1 DE19903598 A1 DE 19903598A1 DE 1999103598 DE1999103598 DE 1999103598 DE 19903598 A DE19903598 A DE 19903598A DE 19903598 A1 DE19903598 A1 DE 19903598A1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric
- gate
- semiconductor device
- layer
- gate dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 description 17
- 230000005684 electric field Effects 0.000 description 10
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000013500 data storage Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1999103598 DE19903598A1 (de) | 1999-01-29 | 1999-01-29 | Halbleitervorrichtung mit Mehrfachdielektrikum |
| PCT/DE2000/000203 WO2000045441A2 (de) | 1999-01-29 | 2000-01-25 | Halbleitervorrichtung mit mehrfachdielektrikum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1999103598 DE19903598A1 (de) | 1999-01-29 | 1999-01-29 | Halbleitervorrichtung mit Mehrfachdielektrikum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19903598A1 true DE19903598A1 (de) | 2000-08-10 |
Family
ID=7895824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1999103598 Ceased DE19903598A1 (de) | 1999-01-29 | 1999-01-29 | Halbleitervorrichtung mit Mehrfachdielektrikum |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE19903598A1 (un) |
| WO (1) | WO2000045441A2 (un) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003030264A1 (en) * | 2001-09-28 | 2003-04-10 | Advanced Micro Devices, Inc. | Non volatile memory cell structure using multilevel trapping dielectric |
| DE10158019A1 (de) * | 2001-11-27 | 2003-06-12 | Infineon Technologies Ag | Floatinggate-Feldeffekttransistor |
| WO2003079451A1 (en) * | 2002-03-15 | 2003-09-25 | Motorola, Inc., A Corporation Of The State Of Delaware | Gate dielectric and method therefor |
| WO2004021399A2 (en) * | 2002-08-29 | 2004-03-11 | Freescale Semiconductor, Inc. | Dielectric storage memory cell (monos) having high permittivity top dielectric and method therefor |
| US7135370B2 (en) | 2004-07-01 | 2006-11-14 | Freescale Semiconductor, Inc. | Dielectric storage memory cell having high permittivity top dielectric and method therefor |
| DE102005008321B4 (de) * | 2005-02-23 | 2008-09-25 | Qimonda Ag | Mittels Feldeffekt steuerbares Halbleiterspeicherelement mit verbessertem Einfangdielektrikum |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7790516B2 (en) | 2006-07-10 | 2010-09-07 | Qimonda Ag | Method of manufacturing at least one semiconductor component and memory cells |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4250206A (en) * | 1978-12-11 | 1981-02-10 | Texas Instruments Incorporated | Method of making non-volatile semiconductor memory elements |
| US4804640A (en) * | 1985-08-27 | 1989-02-14 | General Electric Company | Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film |
| JP3635681B2 (ja) * | 1994-07-15 | 2005-04-06 | ソニー株式会社 | バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法 |
| JP2871530B2 (ja) * | 1995-05-10 | 1999-03-17 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH10178170A (ja) * | 1996-12-19 | 1998-06-30 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6015739A (en) * | 1997-10-29 | 2000-01-18 | Advanced Micro Devices | Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant |
-
1999
- 1999-01-29 DE DE1999103598 patent/DE19903598A1/de not_active Ceased
-
2000
- 2000-01-25 WO PCT/DE2000/000203 patent/WO2000045441A2/de active Application Filing
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003030264A1 (en) * | 2001-09-28 | 2003-04-10 | Advanced Micro Devices, Inc. | Non volatile memory cell structure using multilevel trapping dielectric |
| DE10158019A1 (de) * | 2001-11-27 | 2003-06-12 | Infineon Technologies Ag | Floatinggate-Feldeffekttransistor |
| DE10158019C2 (de) * | 2001-11-27 | 2003-09-18 | Infineon Technologies Ag | Floatinggate-Feldeffekttransistor |
| US6914292B2 (en) | 2001-11-27 | 2005-07-05 | Infineon Technologies Ag | Floating gate field-effect transistor |
| WO2003079451A1 (en) * | 2002-03-15 | 2003-09-25 | Motorola, Inc., A Corporation Of The State Of Delaware | Gate dielectric and method therefor |
| US6717226B2 (en) | 2002-03-15 | 2004-04-06 | Motorola, Inc. | Transistor with layered high-K gate dielectric and method therefor |
| WO2004021399A2 (en) * | 2002-08-29 | 2004-03-11 | Freescale Semiconductor, Inc. | Dielectric storage memory cell (monos) having high permittivity top dielectric and method therefor |
| WO2004021399A3 (en) * | 2002-08-29 | 2004-04-01 | Motorola Inc | Dielectric storage memory cell (monos) having high permittivity top dielectric and method therefor |
| US6812517B2 (en) | 2002-08-29 | 2004-11-02 | Freescale Semiconductor, Inc. | Dielectric storage memory cell having high permittivity top dielectric and method therefor |
| CN100466292C (zh) * | 2002-08-29 | 2009-03-04 | 飞思卡尔半导体公司 | 具有高介电常数顶部电介质的电介质存储器存储单元及其方法 |
| US7135370B2 (en) | 2004-07-01 | 2006-11-14 | Freescale Semiconductor, Inc. | Dielectric storage memory cell having high permittivity top dielectric and method therefor |
| DE102005008321B4 (de) * | 2005-02-23 | 2008-09-25 | Qimonda Ag | Mittels Feldeffekt steuerbares Halbleiterspeicherelement mit verbessertem Einfangdielektrikum |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000045441A3 (de) | 2001-03-29 |
| WO2000045441A2 (de) | 2000-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE |
|
| 8131 | Rejection |