DE19826689B4 - Halbleiterbauelement und Herstellungsverfahren eines Halbleiterbauelementes - Google Patents

Halbleiterbauelement und Herstellungsverfahren eines Halbleiterbauelementes Download PDF

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Publication number
DE19826689B4
DE19826689B4 DE19826689A DE19826689A DE19826689B4 DE 19826689 B4 DE19826689 B4 DE 19826689B4 DE 19826689 A DE19826689 A DE 19826689A DE 19826689 A DE19826689 A DE 19826689A DE 19826689 B4 DE19826689 B4 DE 19826689B4
Authority
DE
Germany
Prior art keywords
contact
insulating film
electrically conductive
film
conductor pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19826689A
Other languages
German (de)
English (en)
Other versions
DE19826689A1 (de
Inventor
Kazuo Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19826689A1 publication Critical patent/DE19826689A1/de
Application granted granted Critical
Publication of DE19826689B4 publication Critical patent/DE19826689B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H10W20/039—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures also covering sidewalls of the conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19826689A 1997-10-29 1998-06-16 Halbleiterbauelement und Herstellungsverfahren eines Halbleiterbauelementes Expired - Fee Related DE19826689B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPP9-297230 1997-10-29
JP29723097A JP3856544B2 (ja) 1997-10-29 1997-10-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE19826689A1 DE19826689A1 (de) 1999-05-12
DE19826689B4 true DE19826689B4 (de) 2005-03-31

Family

ID=17843859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19826689A Expired - Fee Related DE19826689B4 (de) 1997-10-29 1998-06-16 Halbleiterbauelement und Herstellungsverfahren eines Halbleiterbauelementes

Country Status (6)

Country Link
US (3) US6023083A (https=)
JP (1) JP3856544B2 (https=)
KR (1) KR100272989B1 (https=)
CN (1) CN1104037C (https=)
DE (1) DE19826689B4 (https=)
TW (1) TW459280B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268661B1 (en) * 1999-08-31 2001-07-31 Nec Corporation Semiconductor device and method of its fabrication
US6074943A (en) * 1997-04-16 2000-06-13 Texas Instruments Incorporated Sidewalls for guiding the via etch
US6278152B1 (en) * 1997-06-27 2001-08-21 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP3856544B2 (ja) 1997-10-29 2006-12-13 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JPH11186382A (ja) * 1997-12-19 1999-07-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001036036A (ja) 1999-07-21 2001-02-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100558005B1 (ko) * 2003-11-17 2006-03-06 삼성전자주식회사 적어도 하나의 스토리지 노드를 갖는 반도체 장치들 및 그제조 방법들

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759911A (en) * 1995-08-22 1998-06-02 International Business Machines Corporation Self-aligned metallurgy
US5824591A (en) * 1996-02-29 1998-10-20 Nec Corporation Method for manufacturing a stacked capacitor
US5923072A (en) * 1994-08-19 1999-07-13 Fujitsu Limited Semiconductor device with metallic protective film

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331116A (en) * 1992-04-30 1994-07-19 Sgs-Thomson Microelectronics, Inc. Structure and method for forming contact structures in integrated circuits
KR970007967B1 (en) * 1994-05-11 1997-05-19 Hyundai Electronics Ind Fabrication method and semiconductor device
JPH08250589A (ja) 1995-03-14 1996-09-27 Sony Corp 半導体装置の製造方法
JP2679671B2 (ja) * 1995-03-30 1997-11-19 日本電気株式会社 半導体記憶装置の容量素子の製造方法
JPH08306664A (ja) 1995-05-10 1996-11-22 Sony Corp 半導体装置の製造方法
US5550076A (en) * 1995-09-11 1996-08-27 Vanguard International Semiconductor Corp. Method of manufacture of coaxial capacitor for dram memory cell and cell manufactured thereby
JP3012187B2 (ja) * 1996-02-05 2000-02-21 松下電子工業株式会社 半導体装置の製造方法
JP2790110B2 (ja) * 1996-02-28 1998-08-27 日本電気株式会社 半導体装置の製造方法
US5710074A (en) * 1996-10-18 1998-01-20 Vanguard International Semiconductor Corporation Increased surface area of an STC structure via the use of a storage node electrode comprised of polysilicon mesas and polysilicon sidewall spacers
US5710075A (en) * 1996-11-06 1998-01-20 Vanguard International Semiconductor Corporation Method to increase surface area of a storage node electrode, of an STC structure, for DRAM devices
US5731130A (en) * 1996-11-12 1998-03-24 Vanguard International Semiconductor Corporation Method for fabricating stacked capacitors on dynamic random access memory cells
US5792692A (en) * 1997-08-18 1998-08-11 Chartered Semiconductor Manufacturing, Ltd. Method of fabricating a twin hammer tree shaped capacitor structure for a dram device
JP3856544B2 (ja) 1997-10-29 2006-12-13 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JPH11176833A (ja) 1997-12-10 1999-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH11186382A (ja) 1997-12-19 1999-07-09 Mitsubishi Electric Corp 半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923072A (en) * 1994-08-19 1999-07-13 Fujitsu Limited Semiconductor device with metallic protective film
US5759911A (en) * 1995-08-22 1998-06-02 International Business Machines Corporation Self-aligned metallurgy
US5824591A (en) * 1996-02-29 1998-10-20 Nec Corporation Method for manufacturing a stacked capacitor

Also Published As

Publication number Publication date
KR19990036498A (ko) 1999-05-25
US6023083A (en) 2000-02-08
US6284618B1 (en) 2001-09-04
CN1215910A (zh) 1999-05-05
CN1104037C (zh) 2003-03-26
DE19826689A1 (de) 1999-05-12
US20010023122A1 (en) 2001-09-20
TW459280B (en) 2001-10-11
JP3856544B2 (ja) 2006-12-13
JPH11135746A (ja) 1999-05-21
KR100272989B1 (ko) 2000-12-01
US6344406B2 (en) 2002-02-05

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee