DE19680872T1 - Blaulicht emittierendes Element und Verfahren zur Herstellung desselben - Google Patents

Blaulicht emittierendes Element und Verfahren zur Herstellung desselben

Info

Publication number
DE19680872T1
DE19680872T1 DE19680872T DE19680872T DE19680872T1 DE 19680872 T1 DE19680872 T1 DE 19680872T1 DE 19680872 T DE19680872 T DE 19680872T DE 19680872 T DE19680872 T DE 19680872T DE 19680872 T1 DE19680872 T1 DE 19680872T1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
same
emitting element
blue light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19680872T
Other languages
English (en)
Other versions
DE19680872B4 (de
Inventor
Koichi Nitta
Hidetoshi Fujimoto
Masayuki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE19680872T1 publication Critical patent/DE19680872T1/de
Application granted granted Critical
Publication of DE19680872B4 publication Critical patent/DE19680872B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
DE19680872T 1995-08-31 1996-08-30 Verfahren zur Herstellung eines Licht emittierenden Elements Expired - Fee Related DE19680872B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22399395 1995-08-31
JP7/223993 1995-08-31
PCT/JP1996/002434 WO1997008759A1 (fr) 1995-08-31 1996-08-30 Dispositif emetteur de lumiere bleue et son procede de fabrication

Publications (2)

Publication Number Publication Date
DE19680872T1 true DE19680872T1 (de) 1997-10-16
DE19680872B4 DE19680872B4 (de) 2009-01-08

Family

ID=16806911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19680872T Expired - Fee Related DE19680872B4 (de) 1995-08-31 1996-08-30 Verfahren zur Herstellung eines Licht emittierenden Elements

Country Status (7)

Country Link
US (1) US6258617B1 (de)
EP (1) EP0805500A4 (de)
KR (1) KR100326101B1 (de)
CN (1) CN1132253C (de)
DE (1) DE19680872B4 (de)
GB (1) GB2310083B (de)
WO (1) WO1997008759A1 (de)

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JP2000261035A (ja) * 1999-03-12 2000-09-22 Toyoda Gosei Co Ltd ＧａＮ系の半導体素子
WO2000055893A1 (fr) * 1999-03-17 2000-09-21 Mitsubishi Cable Industries, Ltd. Base de semiconducteur et son procede de fabrication et procede de fabrication de cristal semiconducteur
US7056755B1 (en) 1999-10-15 2006-06-06 Matsushita Electric Industrial Co., Ltd. P-type nitride semiconductor and method of manufacturing the same
JP4103309B2 (ja) * 2000-07-13 2008-06-18 松下電器産業株式会社 ｐ型窒化物半導体の製造方法
TW552650B (en) * 2001-02-01 2003-09-11 Semiconductor Energy Lab Deposition apparatus and deposition method
US6649942B2 (en) 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
JP2003040699A (ja) * 2001-06-06 2003-02-13 Ammono Sp Zo O ガリウム含有窒化物のバルク単結晶の製造法
KR100679377B1 (ko) * 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. 질화물 벌크 단결정층을 사용한 발광 디바이스 구조
KR100883479B1 (ko) * 2002-02-26 2009-02-16 주식회사 엘지이아이 질화물 반도체 레이저 다이오드 및 그 제조방법
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
WO2003098757A1 (fr) * 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Structure d'element electroluminescent comprenant une couche de monocristaux de nitrure en vrac
US6972516B2 (en) * 2002-06-14 2005-12-06 University Of Cincinnati Photopump-enhanced electroluminescent devices
KR100495004B1 (ko) * 2002-07-09 2005-06-10 엘지이노텍 주식회사 발광다이오드 및 그 제조방법
WO2004053210A1 (en) * 2002-12-11 2004-06-24 Ammono Sp. Z O.O. A substrate for epitaxy and a method of preparing the same
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
PL1769105T3 (pl) * 2004-06-11 2014-11-28 Ammono S A Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7523783B2 (en) * 2004-12-10 2009-04-28 Production Control Services, Inc. Internal shock absorber plunger
TW200642101A (en) * 2005-05-18 2006-12-01 Univ Southern Taiwan Tech Photodetector
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US7862118B2 (en) * 2008-06-16 2011-01-04 Sims Jr Dewey M Infant seat rocker
CN102237455B (zh) * 2010-04-27 2013-03-13 国立中央大学 发光二极管结构
EP2740162B1 (de) 2011-08-05 2019-07-03 Wostec, Inc. Lichtemittierende diode mit einer nanostrukturierten schicht, verfahren zu ihrer herstellung und nanomaske die in dem verfahren verwendet wird.
WO2013109157A1 (en) 2012-01-18 2013-07-25 Wostec, Inc. Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using
WO2014142700A1 (en) 2013-03-13 2014-09-18 Wostec Inc. Polarizer based on a nanowire grid
KR102160068B1 (ko) * 2013-05-22 2020-09-25 서울바이오시스 주식회사 발광 소자 및 그것을 제조하는 방법
EP3161857B1 (de) 2014-06-26 2021-09-08 Wostec, Inc. Verfahren zur herstellung einer wellenartigen harten nanomaske auf einer topografischen struktur
US10672427B2 (en) 2016-11-18 2020-06-02 Wostec, Inc. Optical memory devices using a silicon wire grid polarizer and methods of making and using
WO2018156042A1 (en) 2017-02-27 2018-08-30 Wostec, Inc. Nanowire grid polarizer on a curved surface and methods of making and using
CN109216512B (zh) * 2017-07-05 2020-02-07 Tcl集团股份有限公司 一种qled器件及其制备方法、高压处理装置
DE102017121480B4 (de) * 2017-09-15 2024-04-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierendes Halbleiterbauteil

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JPS60196755A (ja) * 1984-03-21 1985-10-05 Nec Corp レジストの現像液
JPS60232451A (ja) * 1984-04-27 1985-11-19 Sekisui Chem Co Ltd 貯湯式電気温水器の制御装置
DE69126152T2 (de) * 1990-02-28 1997-11-13 Toyoda Gosei Kk Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
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US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
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US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JP3325380B2 (ja) * 1994-03-09 2002-09-17 株式会社東芝 半導体発光素子およびその製造方法
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JPH088460A (ja) * 1994-06-22 1996-01-12 Mitsubishi Cable Ind Ltd ｐ型ＡｌＧａＮ系半導体の製造方法
JP3341948B2 (ja) * 1994-07-14 2002-11-05 三菱電線工業株式会社 ｐ型ＧａＮ系半導体の製造方法
EP1473781A3 (de) * 1994-07-21 2007-02-21 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JP3325713B2 (ja) * 1994-08-22 2002-09-17 ローム株式会社 半導体発光素子の製法
JP2666237B2 (ja) * 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
JP3254931B2 (ja) 1994-10-17 2002-02-12 松下電器産業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法
JPH08125222A (ja) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd ３族窒化物半導体の製造方法
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
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US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices

Also Published As

Publication number Publication date
GB2310083B (en) 1999-07-28
KR970707594A (ko) 1997-12-01
WO1997008759A1 (fr) 1997-03-06
CN1132253C (zh) 2003-12-24
GB9708875D0 (en) 1997-06-25
EP0805500A1 (de) 1997-11-05
EP0805500A4 (de) 2001-10-24
CN1164934A (zh) 1997-11-12
US6258617B1 (en) 2001-07-10
KR100326101B1 (ko) 2002-10-09
GB2310083A (en) 1997-08-13
DE19680872B4 (de) 2009-01-08

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Legal Events

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OP8 Request for examination as to paragraph 44 patent law
8607 Notification of search results after publication
8607 Notification of search results after publication
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130301